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    BF245C TRANSISTOR Search Results

    BF245C TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BF245C TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bf245c

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors


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    PDF BF245A; BF245B; BF245C MAM257 R77/02/pp13 bf245c

    BF245C

    Abstract: BF245B BF245A bf245c equivalent BF245C NATIONAL
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors


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    PDF BF245A; BF245B; BF245C MAM257 R77/02/pp13 BF245C BF245B BF245A bf245c equivalent BF245C NATIONAL

    bf245b

    Abstract: bf245c equivalent BF245A BF245C MBH553
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


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    PDF BF245A; BF245B; BF245C bf245b bf245c equivalent BF245A BF245C MBH553

    BF245c spice model

    Abstract: BF245C bf245b spice model bf245b BF245B spice BF245A spice BF245c spice bf245a bf245c cross reference sc07 catalog
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


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    PDF BF245A; BF245B; BF245C BF245A BF245B BF245C BF245c spice model bf245b spice model BF245B spice BF245A spice BF245c spice bf245c cross reference sc07 catalog

    Untitled

    Abstract: No abstract text available
    Text: £Pioducti, me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 BF245A; BF245B: BF245C U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 N-channel silicon field-effect transistors FEATURES FAX: (973) 375.3960 PINNING • Interchangeabillty of drain and source connections


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    PDF BF245A; BF245B: BF245C

    BF245

    Abstract: bf245b BF245C bf245c equivalent BF245A BF245B PHILIPS application notes BF245A MGE786
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


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    PDF BF245A; BF245B; BF245C BF245 bf245b BF245C bf245c equivalent BF245A BF245B PHILIPS application notes BF245A MGE786

    bf245 equivalent

    Abstract: bf245 BF245 application note BF244A MOTOROLA BF245 motorola BF244A equivalent bf245c equivalent BF245c MOTOROLA bf244a bf245b equivalent
    Text: MOTOROLA Order this document by BF244A/D SEMICONDUCTOR TECHNICAL DATA BF244A BF244B BF245 BF245A BF245B BF245C JFET VHF/UHF Amplifiers N–Channel — Depletion 3 DRAIN 2 GATE STYLE 22 1 SOURCE 3 DRAIN 1 GATE 1 2 STYLE 23 2 SOURCE MAXIMUM RATINGS Rating Symbol


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    PDF BF244A/D BF244A BF244B BF245 BF245A BF245B BF245C BF244A, 226AA) bf245 equivalent BF245 application note BF244A MOTOROLA BF245 motorola BF244A equivalent bf245c equivalent BF245c MOTOROLA bf245b equivalent

    HVR 2-12

    Abstract: No abstract text available
    Text: [£ii£u <=5£>ni-L.onaucto'i Lr'iodi JLCtl, j ^V£o^ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Una. BF 245 A BF 245 B BF246C IM-Channel Junction Field-Effect Transistors TELEPHONE: 973 376-2922 (212) 227-6005 (973) 376-8960 AX BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar


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    PDF BF246C f100MHÂ mb-25l HVR 2-12

    bf245c

    Abstract: BF245A bf245b BF245B Philips Field-Effect Transistors BH553
    Text: Philips Semiconductors Product specification N'Channel silicon field-effect transistors FEATURES BF245A; BF245B; BF245C PINNING • Interchangeability of drain and source connections • Frequencies up to 700 MHz. APPLICATIONS PIN SYMBOL 1 d drain 2 s source


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    PDF BF245A; BF245B; BF245C MGE784 bf245c BF245A bf245b BF245B Philips Field-Effect Transistors BH553

    BF245C

    Abstract: bf245b BF245A BF-215 application notes BF245A BF245B PHILIPS mqe7 MBH555
    Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES BF245A; BF245B; BF245C PINNING • Interchangeability of drain and source connections PIN SYMBOL • Frequencies up to 700 MHz. 1 2 d drain s source APPLICATIONS


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    PDF BF245A; BF245B; BF245C 711Gfl2b 010bS53 711Dfl2b DlGb554 BF245C bf245b BF245A BF-215 application notes BF245A BF245B PHILIPS mqe7 MBH555

    BF245

    Abstract: BF 245 2SC 1885 transistor BF 509 Q62702-F236 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205
    Text: 2SC D • A23SbOS Q0Q44S7 2 « S I E G T-St-Z^ . N-Channel Junction Field-Effect Transistors BF 245 A BF 245 B o - BF245C SIEMENS AKTIEN6ESELLSCHAF 57 BF 24 5 A, B, and C are N-channel junction field-effect transistors in plastic package similar


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    PDF S23SbQS Q0044S7 o-BF245C Q62702-F236 Q62702-F209 Q62702-F182 Q62702-F205 BF245A AKTIEN6ESELLSCHAF-BF245C 103MHz BF245 BF 245 2SC 1885 transistor BF 509 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205

    7.1 Channel audio amplifier

    Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_


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    PDF BFW13 BFW12 BFW11 BFW10 BF245A BF245B BF245C BF256A BF256B BF545A 7.1 Channel audio amplifier amplifier audio BFT46 BF861A n channel audio BF410C BF512 transistors BFW10

    BF991

    Abstract: BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Small-signal Field-effect Transistors Index Types added to the range since the last issue of Handbook SC07 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 2N5484 80 BF909R 165 J174 288 2N5485


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    PDF 2N5484 2N5485 2N5486 BF245A BF245B BF245C BF410A BF410B BF410C BF410D BF991 BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174

    F245A

    Abstract: BF244 BF245 BF245C JFET BF245B BF245 motorola
    Text: BF244A,B CASE 29-04, STYLE 22 TO-92 TO-226AA BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M R A TIN G S Rating Sym bol Value U nit D rain-S ource Voltage VDS ±30 Vdc Dram -G ate Voltage vdg 30 Vdc G ate-Source Voltage vgs 30 Vdc id 100 m Adc


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    PDF BF244A O-226AA) BF245 2N5484 BF245, BF244, F245A BF244 BF245C JFET BF245B BF245 motorola

    2n5248

    Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE


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    PDF BC264A O-92DE BC264B BC264C BC264D BF246A O-92DA 2n5248 BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103

    2n3819

    Abstract: bf245b
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+


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    PDF BC264A BC264B BC264C BC264D BF246A BF246B BF246C BF247A BF247B BF247C 2n3819 bf245b

    BF247A

    Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
    Text: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150


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    PDF BS170 BS208 BF904 BF904R BF904WR BS250 BC264D BF908 BSD12 BF245A BF247A bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR

    TO-92DD

    Abstract: BC264B BC264A BC264C BC264D BF246A BF246B BF246C BF247A BF247B
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS ofF Ciss Crss NF (V) max (piO max (PF) max (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11 + 1.2+ 1.2+ 1.2+ 1.2+ 3.5+ 2 2 2 2 Pd (mW) BVGSS (V) min max (mmhos) min


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    PDF BC264A O-92DE BC264B BC264C T092DE BC264D BF246A O-92DA TO-92DD BF246B BF246C BF247A BF247B

    BF245

    Abstract: BF244 BF244 JFET JFET BF245 BF244A BF245 motorola BF245C transistors bf245 BF244A MOTOROLA BF245C JFET
    Text: BF244A,B ¿T CASE 29-04, STYLE 22 ¿ i t H / TO-92 TO-226AA .sou, BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M RATINGS R a tin g S ym bol V a lu e U n it D ra in -S o u rc e V o lta g e VdS ±30 Vdc D ra m -G a te V o lta g e VdG 30 V dc


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    PDF BF244A O-226AA) BF245 2N5484 BF245, BF244, BF244 BF244 JFET JFET BF245 BF245 motorola BF245C transistors bf245 BF244A MOTOROLA BF245C JFET

    Untitled

    Abstract: No abstract text available
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Pd mW BVGSS (V) min (mA) Yfs mai (mmhos) min m i VGS(oir) Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 min BC264A BC264B BC264C BC264D BF246A TO-92DE


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    PDF BC264A BC264B BC264C BC264D BF246A O-92DE O-92DA

    BF245

    Abstract: BF245C BF245C JFET
    Text: BF244A,B ¿¡T CASE 29-04, STYLE 22 TO-92 TO-226AA 1Souf BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) G al« \ J 1 / M A X IM U M RATINGS R a tin g V a lu e Sym bol U n it D ra in -S o u rc e V o lta g e Vd S D ra in -G a te V o lta g e vdg 30 G a te -S o u rc e V o lta g e


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    PDF BF244A O-226AA) BF245 BF245C BF245C JFET

    2N5248

    Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
    Text: N -Channel Junction Field Effect Transistors GENERAL PURPOSE M A X IM U M R A T IN G S ' dss Im A l TYPE VG S off (V Y fs (mm hos) Ciss Crss NF (pF) (pF) (dB) max max max CASE NO. Pd (mW) b v gss (V) m in BC264A BC264E! BC264C BC264D TO-92DE TO-92DE TO-92DE


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    PDF BC264A O-92DE BC264E! BC264C BC264D BF246A O-92DA 2N5248 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104

    BF245

    Abstract: BF244 BF244 JFET JFET BF245 transistor BF245 A BF245 motorola BF244A MOTOROLA transistor bf244 BF245C JFET transistors bf245
    Text: BF244A,B ¿T CASE 29-04, STYLE 22 ¿ i t H / TO-92 TO-226AA .sou, BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M RATINGS R a tin g S ym bol V a lu e U n it D ra in -S o u rc e V o lta g e VdS ±30 Vdc D ra m -G a te V o lta g e VdG 30 V dc


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    PDF BF244A O-226AA) BF245 2N5484 BF245, BF244, BF244 BF244 JFET JFET BF245 transistor BF245 A BF245 motorola BF244A MOTOROLA transistor bf244 BF245C JFET transistors bf245

    FET BFW11

    Abstract: FET BFW10 OF FET BFW11 BFW10 FET OF FET BFW10 BFW12 BF245A sot23 BFW10 n-channel fet BF245A j310 FET
    Text: 48 RF/Microwave Devices Small-Signal Field-Effect Transistors Junction FET's These are fo r applications in the VHF range. Principal features of these products are their low noise, high transfer conductance and their high input impedance, the latter, in particular, m inim izing signal losses and helping to sim plify


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    PDF BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C BF256A BF256B BF256C FET BFW11 FET BFW10 OF FET BFW11 BFW10 FET OF FET BFW10 BFW12 BF245A sot23 BFW10 n-channel fet BF245A j310 FET