BF245 REPLACEMENT Search Results

BF245 REPLACEMENT Result Highlights (6)

Part	Manufacturer	Description
ADT75BRMZ-REEL7	Analog Devices	LM75 Replacement
ADT75ARZ-REEL7	Analog Devices	LM75 Replacement
ADT75BRMZ-REEL	Analog Devices	LM75 Replacement
ADT75ARZ-REEL	Analog Devices	LM75 Replacement
ADT75ARMZ-REEL7	Analog Devices	LM75 Replacement
ADT75ARMZ-REEL	Analog Devices	LM75 Replacement

BF245 REPLACEMENT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2n3819 replacement Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device	Original	PDF	MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
2n3819 replacement Abstract: transistor TO-92 bc108 mps2907 replacement BC237 BC109C replacement BF245 bf245 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV409LT1 MV409 Silicon Tuning Diodes These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Devices	Original	PDF	MMBV409LT1 MV409 236AB) 8218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2n3819 replacement transistor TO-92 bc108 mps2907 replacement BC237 BC109C replacement BF245 bf245 replacement
2n3819 replacement Abstract: BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods.	Original	PDF	MMBV105GLT1 236AB) EL218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2n3819 replacement BC237
j305 replacement Abstract: BC237 mps2907 replacement BC109C replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical	Original	PDF	MMBV3102LT1 236AB) t218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 j305 replacement BC237 mps2907 replacement BC109C replacement
2n3819 replacement Abstract: transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical	Original	PDF	MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 2n3819 replacement transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement
2n3019 replacement Abstract: BC237 MV209 diode mps2907 replacement 2n3819 replacement K 2056 transistor 6-SOT-23 marking 27 OF transistor 2N2222 to-92 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. * Motorola Preferred Devices	Original	PDF	70/SOT MBV109T1 MMBV109LT1* MV209* R218A MSC1621T1 MSC2404 MSD1819A MV1620 2n3019 replacement BC237 MV209 diode mps2907 replacement 2n3819 replacement K 2056 transistor 6-SOT-23 marking 27 OF transistor 2N2222 to-92
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r	Original	PDF	MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237
2N16 Abstract: BC237 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	PDF	MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72
2n2222 h 331 transistors Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	PDF	MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
2N643 Abstract: BC237 MARKING DP SOT-363 DO204AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	PDF	MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA
BC237 Abstract: MMBD2005T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	PDF	MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237
BC237 Abstract: MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	PDF	MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10	Original	PDF	MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237
BC237 Abstract: MPSA06 346 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste	Original	PDF	MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

MMBF4856 Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to	Original	PDF	Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
MIL-STD-750 method 1037 Abstract: BC237 BF245 MPF4856 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other	Original	PDF	OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 MMSD301T1 MMSD701T1 m218A MIL-STD-750 method 1037 BC237 BF245 MPF4856
BC237 Abstract: Fet BF245 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V	Original	PDF	VN0300L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 Fet BF245
MPS751 equivalent Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS	Original	PDF	MPS650 MPS651 MPS750 MPS751 MPS651 MPS751 2218A MSC1621T1 MPS751 equivalent MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor
mpsa63 replace Abstract: BC237 MPSA63 equivalent J111 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit	Original	PDF	MPSA62 MPSA63 MPSA64 MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 mpsa63 replace BC237 MPSA63 equivalent J111
SOT23 JEDEC standard orientation pad size Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	Original	PDF	OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces	Original	PDF	BAS40-04LT1 236AB) Diss218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237
motorola JFET 2N3819 Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current	Original	PDF	MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola JFET 2N3819 C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
transistor equivalent CT 2n5551 Abstract: EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter 1N5148 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic–generation applications, and provide solid–state reliability to replace mechanical tuning methods. • Guaranteed High–Frequency Q	Original	PDF	1N5148 1N5148A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 transistor equivalent CT 2n5551 EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter
E421 fet Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.	OCR Scan	PDF	O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet

BF245 REPLACEMENT Search Results

BF245 REPLACEMENT Result Highlights (6)

BF245 REPLACEMENT Datasheets Context Search

2n3819 replacement

2n3819 replacement

2n3819 replacement

j305 replacement

2n3819 replacement

2n3019 replacement

BC237

2N16

2n2222 h 331 transistors

2N643

BC237

BC237

BC237

BC237

MMBF4856

MIL-STD-750 method 1037

BC237

MPS751 equivalent

mpsa63 replace

SOT23 JEDEC standard orientation pad size

BC237

motorola JFET 2N3819

transistor equivalent CT 2n5551

E421 fet