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    BF TRANSISTOR DATASHEET Search Results

    BF TRANSISTOR DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BF TRANSISTOR DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor bc 7-40

    Abstract: No abstract text available
    Text: <£&ml- lon£Luctoi tPicxLct}., fine. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON PLANAR EPITAXIAL THANSISTOB BF 173 THE BP173 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR


    Original     		PDF BP173 200mA 35MHz transistor bc 7-40

    BF506

    Abstract: No abstract text available
    Text: leiizu ^E.mi-C-ondu.cko'i O^ioaueti, Una. CX !_/ TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 BF506 FAX: (973) 376-8960 SILICON PLANAR PNP VHP OSCILLATOR MIXER The BF 506 is a silicon planar epitaxial PNP transistor in Jedec TO-92 plastic package.


    Original     		PDF BF506 BF506

    shockley diode application

    Abstract: shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet
    Text: Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and Applications Limitations Neil Chadderton Introduction SPICE was originally developed as a simulation tool for Integrated Circuit design SPICE being an acronym for


    Original     		PDF 1970s. F632-79. shockley diode application shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet

    ZBD849

    Abstract: transistor bf 970
    Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching


    Original     		PDF ZBD849 ZBD849 transistor bf 970

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GA10JT06-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE(Tc = 25°C) = = = = 600 V 120 mΩ 25 A 120 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch


    Original     		PDF GA10JT06-CAL GA10JT06 4E-48 858E-28 96E-10 083E-10

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 1200 V 1.4 V 50 A 28 m Features •       175 °C maximum operating temperature Temperature independent switching performance


    Original     		PDF GA50JT12-CAL GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 GA50JT12-CAL

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GA10JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 1.7 V 10 A 170 m Features •       250 °C maximum operating temperature Temperature independent switching performance


    Original     		PDF GA10JT065-CAL GA10JT065 73E-46 50E-28 77E-10 23E-10 20E-02 GA10JT065-CAL

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GA05JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 2.1 V 5A 415 m Features •       250 °C maximum operating temperature Temperature independent switching performance


    Original     		PDF GA05JT065-CAL GA05JT065 22E-47 91E-27 37E-10 36E-10 50E-02 GA05JT065-CAL

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GA05JT06-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 240 mΩ 15 A 110 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch


    Original     		PDF GA05JT06-CAL GA05JT06 0E-47 25E-28 16E-10 021E-10 050E-2

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GA20JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 1200 V 1.4 V 20 A 70 m Features •       175 °C maximum operating temperature Temperature independent switching performance


    Original     		PDF GA20JT12-CAL GA20JT12 00E-47 26E-28 98E-10 22E-9 00E-3 GA20JT12-CAL

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


    Original     		PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet Normally – OFF Silicon Carbide Junction Transistor GA50JT06-CAL VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 25 mΩ 100 A 105 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch


    Original     		PDF GA50JT06-CAL GA50JT06 00E-47 26E-28 3989E-9 026E-09 00E-3 GA50JT06-CAL

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet Normally – OFF Silicon Carbide Junction Transistor GA20JT06-CAL VDS RDS ON ID (Tc = 25°C) hFE(Tc = 25°C) = = = = 600 V 65 mΩ 45 A 110 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch


    Original     		PDF GA20JT06-CAL GA20JT06 00E-47 26E-28 2281E-10 33957E-9 20E-03 GA20JT06-CAL

    Untitled

    Abstract: No abstract text available
    Text: AC-DC 250 Watts CCB250 Series xppower.com • 250 W Convection Cooled • 300 W Peak Rating for 500 ms • Very High Efficiency up to 95% • 5 V Standby Rail and Inhibit Function • 80 275 VAC Operation • IT & Medical BF Safety Approvals • 3 Year Warranty


    Original     		PDF CCB250 VAC/60 16-Mar-12 CCB250

    ZHB6790

    Abstract: 500mA H-bridge NPN/PNP transistor sot223 partmarking 6 C BR27 npn-pnp dual SM-8 BIPOLAR TRANSISTOR
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790


    Original     		PDF ZHB6790 OT223) ZHB6790 500mA H-bridge NPN/PNP transistor sot223 partmarking 6 C BR27 npn-pnp dual SM-8 BIPOLAR TRANSISTOR

    ZHB6718

    Abstract: 12 mje t 5029 npn transistor footprint NPN/PNP transistor sot223 partmarking 6 C ZHB6718 TYPICAL APPLICATION transistor bf 44 NPN SINGLE transistors ssot-6 E4
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


    Original     		PDF ZHB6718 OT223) ZHB6718 12 mje t 5029 npn transistor footprint NPN/PNP transistor sot223 partmarking 6 C ZHB6718 TYPICAL APPLICATION transistor bf 44 NPN SINGLE transistors ssot-6 E4

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


    Original     		PDF ZHB6718 OT223)

    ZHB6790

    Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790


    Original     		PDF ZHB6790 OT223) ZHB6790 diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual

    h6718

    Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


    Original     		PDF ZHB6718 OT223) h6718 bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: ., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 40347 Silicon N-P-N Power Transistor Maximum Ratings, Absolute-Maximum Values: •COLLECTOR-TO-BASE VOLTAGE. .! • COLLECTOR-TO-EMITTER VOLTAGE:


    Original     		PDF O-39/T

    SMD TRANSISTOR MARKING BF

    Abstract: lm357 3578 smd japanese transistor reference manual 1N5819 spice model 3578AM SMD IN5819 vf SIMPLE SWITCHER PCB Layout Guidelines In5819 smd schottky transistor spice
    Text: LM1578A/LM2578A/LM3578A Switching Regulator General Description Features The LM1578A is a switching regulator which can easily be set up for such DC-to-DC voltage conversion circuits as the buck, boost, and inverting configurations. The LM1578A features a unique comparator input stage which not only has


    Original     		PDF LM1578A/LM2578A/LM3578A LM1578A 1-Nov-99 AN-1055: AN-1055 SB-101: 5-Jan-97 28-Jun-96 SMD TRANSISTOR MARKING BF lm357 3578 smd japanese transistor reference manual 1N5819 spice model 3578AM SMD IN5819 vf SIMPLE SWITCHER PCB Layout Guidelines In5819 smd schottky transistor spice

    transistor R74

    Abstract: BFR740L3RH RF Bipolar Transistor bipolar transistor TR151 rf transistor tunnel diode RF Transistor impedance matching what is transistor rf power transistor
    Text: BF R74 0L3 RH Ma xi m u m RF Inp ut Po wer of Si Ge: C Bipol ar Transisto r BFR7 40L 3 RH Technic al Rep ort T R 151 Revision: Ver 1.0 Date: 20. Auguest 2009 RF and Protecti on Devi c es Edition 20. Auguest 2009 Published by Infineon Technologies AG 81726 Munich, Germany


    Original     		PDF BFR740L3RH TR151, TR151 transistor R74 BFR740L3RH RF Bipolar Transistor bipolar transistor TR151 rf transistor tunnel diode RF Transistor impedance matching what is transistor rf power transistor

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    transistor gfs

    Abstract: 2N5116 J176 2N3993 2N3993A IFP44 J174 J175 J177 P1086
    Text: G 30 9-97 PJ99 Process SILICON JU N C T IO N FIELD-EFFECT TRANSISTOR • GENERAL PURPOSE AMPLIFIER • ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, T s 10 mA +150°C -65°C to +175°C


    OCR Scan     		PDF IFP44 P1086, P1087 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 transistor gfs J176 2N3993 IFP44 J174 J175 J177 P1086