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    GeneSic Semiconductor Inc GA05JT065-CAL

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    GA05JT06-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: GA05JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA05JT06-CAL.


    Original     		PDF GA05JT06-CAL sic/baredie/sjt/GA05JT06-CAL GA05JT06-CAL. 27-FEB-2013 GA05JT06 22E-47 908E-27 37E-10 97E-10 50E-02 GA05JT06-CAL SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GA05JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 2.1 V 5A 415 m Features •       250 °C maximum operating temperature Temperature independent switching performance


    Original     		PDF GA05JT065-CAL GA05JT065 22E-47 91E-27 37E-10 36E-10 50E-02 GA05JT065-CAL

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GA05JT06-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 240 mΩ 15 A 110 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch


    Original     		PDF GA05JT06-CAL GA05JT06 0E-47 25E-28 16E-10 021E-10 050E-2