Untitled
Abstract: No abstract text available
Text: M ITEL DCR1374SBA Phase Control Thyristor SEMICONDUCTOR Supersedes Septem ber1997 version, DS4597 - 3.2 DS4597 - 3.3 March 1998 APPLICATIONS • High V oltage Pow er C onverters. ■ High V oltage Pow er Supplies. ■ M otor C ontrol. KEY PARAMETERS V DRM
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ber1997
DS4597
DCR1374SBA
0000A
DCR1374SBA18
DCR1374SBA16
DCR1374SBA14
DCR1374SBA12
DCR1374SBA10
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thyristor TT 18 N 1400
Abstract: No abstract text available
Text: @ M ITEL DCR1374SBA Phase Control Thyristor SEMICONDUCTOR Supersedes Septem ber1997 version, DS4597 - 3.2 DS4597 - 3.3 March 1998 APPLICATIONS • High Voltage Power Converters. ■ High Voltage Power Supplies. ■ Motor Control. KEY PARAMETERS VDRM 1800V
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ber1997
DS4597
DCR1374SBA
0000A
DCR1374SBA18
DCR1374SBA16
DCR1374SBA14
DCR1374SBA12
DCR1374SBA10
thyristor TT 18 N 1400
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DS4246
Abstract: No abstract text available
Text: @MITEL DCR1475SY Phase Control Thyristor SEMICONDUCTOR Supersedes Septem ber1997 version, DS4246 - 3.3 DS4246 • 3.4 APPLICATIONS ■ High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS V DRM 3000V 2220A Jt AV 46000A
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ber1997
DS4246
DCR1475SY
DS4246
6000A
DCR1475SY30
DCR1475SY29
DCR1475SY28
DCR1475SY27
DCR1475SY26
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DS4246
Abstract: DCR1475SY27
Text: M ITEL DCR1475SY Phase Control Thyristor SEMICONDUCTOR Supersedes Septem ber1997 version, DS4246 - 3.3 DS4246 - 3.4 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. ■ W elding. ■ Battery C hargers. March 1998
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ber1997
DS4246
DCR1475SY
6000A
DCR1475SY30
DCR1475SY29
DCR1475SY28
DCR1475SY27
DCR1475SY26
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schematic surge protector ac mains
Abstract: No abstract text available
Text: CLP270M Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT p r o t e c t io n f o r t e l e c o m l in e PRELIMINARY DATASHEET MAIN APPLICATIONS Any telecom equipm ent submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards
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CLP270M
schematic surge protector ac mains
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re 10019
Abstract: 10019
Text: ERICSSON í PTE 10019* 63 Watts, 8 6 0 - 9 6 0 MHz L D M O S Field Effect Transistor Description The 10019 is an internally matched comm on source N-channel enhancement-mode lateral MOSFET intended for cellular and GSM applications in the 860 to 960 MHz range. It is rated at 63 watts minimum
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P5276
P4917-ND
ber1997
re 10019
10019
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