88W51
Abstract: ET630
Text: ET630 9 Amps, 200Volts N-CHANNEL MOSFET • DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
PDF
|
ET630
200Volts
ET630
00A/s
Width300s
88W51
|
8 pin IC 34063
Abstract: 34063 M 34063 ct 34063 a IC 34063 34063 circuit table 8 pin IC 34063A on 34063 circuit digram of 34063 34063A
Text: 34063 Description The MC34063A Series is a monolithic control circuit containing the primary functions required for DC-to-DC converters. These devices consist of an internal temperature compensated reference, comparator, controlled duty cycle oscillator with an active current limit circuit, driver and high current output switch. This series was specifically designed to be
|
Original
|
PDF
|
MC34063A
4063A
MC34063A
6A06--6A07
8 pin IC 34063
34063
M 34063
ct 34063 a
IC 34063
34063 circuit table
8 pin IC 34063A
on 34063
circuit digram of 34063
34063A
|
7N60
Abstract: No abstract text available
Text: 7N60 7 Amps, ,600Volts N-Channel MOSFET • Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
PDF
|
Amps600Volts
ET7N60
O-220
O220F
7N60
|
mosfet 60a 200v
Abstract: ET73 N-channel enhancement 200V 60A
Text: ET730 6 Amps, ,400Volts N-Channel MOSFET • Description The ET730 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
PDF
|
ET730
Amps400Volts
ET730
O-220
O220F
mosfet 60a 200v
ET73
N-channel enhancement 200V 60A
|
TO252 rthjc
Abstract: 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET
Text: 4N60 4 Amps, ,600Volts N-Channel MOSFET • Description The ET4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
PDF
|
Amps600Volts
ET4N60
O-220
O-220F
O220F
TO252 rthjc
4N60 TO-252
4n60 to252
4n60
mosfet 4n60
4N60 application note
TO-252
16nC
TO-252 N-channel MOSFET
TO-252 N-channel power MOSFET
|
74HC164
Abstract: 74*164 6A07
Text: 74HC164 Description The 74HC164 is identical in pinout to the LS/ALS164. The Device inputs are compatible with standard CMOS outputs, with pullup resistors, they are compatible with LS/ALSTTL outputs. The 74HC164 is an 8-bit, serial-itnput oparallel-output shift register. Two serial data inputs, A1 and A2, are provided so that one input
|
Original
|
PDF
|
74HC164
74HC164
LS/ALS164.
ESTEK74HC164
6A06--6A07
74*164
6A07
|
74HC164
Abstract: 174HC164 6A07
Text: 74HC164 Description The 74HC164 is identical in pinout to the LS/ALS164. The Device inputs are compatible with standard CMOS outputs, with pullup resistors, they are compatible with LS/ALSTTL outputs. The 74HC164 is an 8-bit, serial-itnput oparallel-output shift register. Two serial data inputs, A1 and A2, are provided so that
|
Original
|
PDF
|
74HC164
74HC164
LS/ALS164.
ESTEK74HC164
6A06--6A07
174HC164
6A07
|
ET2025
Abstract: 6A07 ET20251 2FB 2 3V12V
Text: ET2025 ET2025 双 通 道音频功 率 放 大 电 路 概述: ET2025 为 立 体 声 音频功 率 放 大 集成 电 路, 适 用 于 各 类 袖珍 或 便 携 式 立 体 声 收 录 机 中 功 率 放 大 器 。 采用 DIP16 封 装形 式 。 特 点 :
|
Original
|
PDF
|
ET2025
DIP16
6A06--6A07
ET2025
6A07
ET20251
2FB 2
3V12V
|
LM339 APPLICATIONS zero crossing
Abstract: 8 pin ic lm339 ic mc14001 for comparator ic lm339 free LM339 IC LM339 datasheet for comparator ic lm339 LM339 MC14001 LM339 comparator hysteresis
Text: LM339 Description The LM339 consists of four independent voltage comparators. These were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply curr ent drain is independent of the magnitude of the power supply voltage. The
|
Original
|
PDF
|
LM339
LM339
LM339M
OP-14
DIP-14
6A06--6A07
LM339 APPLICATIONS zero crossing
8 pin ic lm339
ic mc14001
for comparator ic lm339
free LM339
IC LM339
datasheet for comparator ic lm339
MC14001
LM339 comparator hysteresis
|
mik3842a
Abstract: ka3842 application circuits MIK3842 KA3842 mik3845 3844A MIK3843 3842 PWM power supply application note 3843a MIK3843A
Text: Description The 3842A AM /43A(AM)/44A(AM)/45A(AM) are fixed frequency current mode PWM controller. They are specially designed for OFF−Line and DC to DC converter applications with a minimal external components. Internally implemented circuits include a trimmed
|
Original
|
PDF
|
MIK3842A
MIK38
KA3842/
6A06--6A07
ka3842 application circuits
MIK3842
KA3842
mik3845
3844A
MIK3843
3842 PWM power supply application note
3843a
MIK3843A
|
ET840
Abstract: No abstract text available
Text: ET840 9 Amps, ,500Volts N-Channel MOSFET • Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
PDF
|
ET840
Amps500Volts
ET840
O-220
O-220F
O220F
|
6A07
Abstract: Beijing Estek Electronics ET2025 ET202
Text: ET2025 ET2025 双 通 道音频功 率 放 大 电 路 概述: ET2025 为 立 体 声 音频功 率 放 大 集成 电 路, 适 用 于 各 类 袖珍 或 便 携 式 立 体 声 收 录 机 中 功 率 放 大 器 。 采用 DIP16 封 装形 式 。 特 点 :
|
Original
|
PDF
|
ET2025
DIP16
6A06--6A07
6A07
Beijing Estek Electronics
ET2025
ET202
|
ET2822
Abstract: 6A07
Text: ET2822 双通道音频功率放大电路 8 1 SOP - 8 ET2822 用于便携式录音机和收音机作音频功率放大器 主要特点: 电源电压降到 1.8V 时仍能正常工作 交越失真小 静态电流小 可做桥式或立体声式功放应用
|
Original
|
PDF
|
ET2822
100Hz
22kHz
6A06--6A07
ET2822
6A07
|
24C64 WP
Abstract: 24c32 wp 24C32 24C64 24c64 eeprom eeprom 24c64 AT 24C64 EEPROM 24C64 AN 24 C64 N 24C64 AN 24c32 6
Text: 24C32 / 24C64 Features ¡Wide Voltage Operation ¡1 MHz 5V , 400 kHz (1.8V, 2.5V, 2.7V) Compatibility ¡Write Protect Pin for Hardware Data Protection ¡32-byte Page (32K, 64K) Write Modes ¡Partial Page Writes Allowed ¡Self-timed Write Cycle (5 ms max)
|
Original
|
PDF
|
24C32
24C64
32-byte
24C32,
24C64,
C-125
24C64 WP
24c32 wp
24C64
24c64 eeprom
eeprom 24c64
AT 24C64 EEPROM
24C64 AN 24 C64 N
24C64 AN
24c32 6
|
|
8 pin ic lm339
Abstract: LM339 APPLICATIONS zero crossing ic mc14001 free LM339 MC14001 datasheet for comparator ic lm339 LM339 APPLICATIONS LM339 lm339 ic ic LM339
Text: LM339 Description The LM339 consists of four independent voltage comparators. These were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply curr ent drain is independent of the magnitude of the power supply voltage. The
|
Original
|
PDF
|
LM339
LM339
LM339M
OP-14
/DIP-14
6A06--6A07
8 pin ic lm339
LM339 APPLICATIONS zero crossing
ic mc14001
free LM339
MC14001
datasheet for comparator ic lm339
LM339 APPLICATIONS
lm339 ic
ic LM339
|
"Op Amp" lm 324
Abstract: lm 324 LM 324 four amplifier lm 324 file lm 324 op amp LM324 DB250C block digram LM 324 datasheet 6A07
Text: LM 324 Description The LM324 consists of four independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies the magnitude of the power supply voltage. Application areas include
|
Original
|
PDF
|
LM324
LM324
OP-14
DIP-14
6A06--6A07
"Op Amp" lm 324
lm 324
LM 324 four amplifier
lm 324 file
lm 324 op amp
DB250C
block digram
LM 324 datasheet
6A07
|
SE5117
Abstract: No abstract text available
Text: SE5117 Description Features Typical 90mV dropout voltage at 150mA. The SE5117 is an efficient linear voltage regulator. It has extra low dropout voltage. At light loads the typical dropout voltage is 5.5mV, and at full load the typical dropout voltage is 650mV. The output voltage accuracy is better than
|
Original
|
PDF
|
SE5117
150mA.
650mV.
650mV
SE5117
OT-223
SE5117.
|
6A07
Abstract: IW4049B
Text: IW4049B Description The IW4049B is hex buffers and feature logic-level conversion using only one supply voltage Vcc .The input- signal high (Vih) can exceed the Vcc supply voltage when these devices are used for logic -level conversions. These devices are intended for use as CMOS to DTL/TTL converters
|
Original
|
PDF
|
IW4049B
IW4049B
6A06--6A07
6A07
|
KA7500
Abstract: ka7500 application ka7500 r ka7500 equivalent ka7500 be A7500 6A07
Text: KA7500 Description The KA7500 incorporate on a single monolithic chip all the functions required in the construction of a pulse-width-modulation control circuit. Designed primarily for power supply control ,these devices offer the systems engineer the flexibility to tailor the power
|
Original
|
PDF
|
KA7500
KA7500
A7500
DIP-16
6A06--6A07
ka7500 application
ka7500 r
ka7500 equivalent
ka7500 be
6A07
|
et50n06
Abstract: No abstract text available
Text: ET50N06 50 Amps,60Volts N-CHANNEL MOSFET • DESCRIPTION The ET50N06 is a N-Channel enhancement MOSFET and is designed to have better characteristics, such as superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low
|
Original
|
PDF
|
ET50N06
Amps60Volts
ET50N06
ISD50A
di/dt300A/s
Width300s
|
2n60
Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
Text: 2N60 N2 Amps,600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
PDF
|
Amps600Volts
ET2N60
O-220
O-220F
O-251
O-252
O220F
2n60
2N60 TO-252
2n60 MOSFEt
ISD20A
TO252 rthjc
CHARACTERISTICS DIODE 2n60
to-251
TO-252
2N60 TO220F
|
Untitled
Abstract: No abstract text available
Text: ET740 10.5 Amps, ,400Volts N-Channel MOSFET • Description The ET740 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
PDF
|
ET740
Amps400Volts
ET740
O-220
O-220F
O220F
|
Amps500Volts
Abstract: No abstract text available
Text: ET830 5 Amps, ,500Volts N-Channel MOSFET • Description The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
|
Original
|
PDF
|
ET830
Amps500Volts
ET830
O-220
O-220F
O220F
|
LM393
Abstract: LM393 switching power supply CIRCUIT lm393 lm393 application block digram LM393 supply voltage lm393 over 6A07
Text: LM393 Description The LM393 consists of two independent voltage comparators. These were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power
|
Original
|
PDF
|
LM393
LM393
6A06--6A07
LM393 switching power supply
CIRCUIT lm393
lm393 application
block digram
LM393 supply voltage
lm393 over
6A07
|