BF370R
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE VCBO 40 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage
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BF370R
C-120
BF370R
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BF370R
Abstract: No abstract text available
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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BF370R
C-120
BF370R
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BF370R
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE VCBO 40 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 4.5 Emitter Base Voltage IC
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BF370R
100uA,
BF370R
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Fuji-SVEA
Abstract: transistor RF 2SC1590
Text: 2SC1590 Silicon NPN Transistor RF Power Output The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications. BEC WINTransceiver Features: High Power Gain: Gpe >/= 10dB VCC = 13.5V, PO = 6W, f = 175MHz
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2SC1590
2SC1590
136-174MHz
175MHz)
175MHz
100mA,
600mW,
Fuji-SVEA
transistor RF
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2SC9014
Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Text: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225
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OT-23
2SC1623L3
BCW60A
2SC1623L4
BCW60B
2SC1623L5
BCW60C
2SC1623L6
BCW60D
2SC1623L7
2SC9014
BEC npn
2SC9013 SOT-23
BTA43
BTA70
BA811
2SC1623L6
BT3904
BTA42
BT5551
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Untitled
Abstract: No abstract text available
Text: Small Signal RF/VHF/UHF Transistors Part No. Polarity VCEO V 2N5770 MPS5179 MPSH10 MPSH11 PN3563 PN918 NPN 15 12 25 25 15 15 fT Min. @ Max. (MHz) (MHz) 900 900 650 650 600 600 1800 2000 1500 1500 VCE & IC VCE IC Cob Max. (V) (mA) (pF) 6 10 10 10 - 8 5 4
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2N5770
MPS5179
MPSH10
MPSH11
PN3563
PN918
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MPSA94
Abstract: MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 MPSA42 MPSA44 MPSA45 MPSA55
Text: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB (nA) hFE @ VCE @ IC VCE (SAT) @ IC Cob fT NF toff CODE (V) MPSA25 NPN DARLINGTON EBC MIN 40 (V) *VCES MIN 40* 30 *hFE (1kHZ) MIN MAX 10,000 - 5.0 100 1.50
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MPSA25
MPSA26
MPSA27
MPSA28
PN3638A
PN3639
PN3640
MPSA94
MPSA25
MPSA26
MPSA27
MPSA28
MPSA29
MPSA42
MPSA44
MPSA45
MPSA55
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PN3568
Abstract: MPSA65 MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 MPSA42 MPSA44 MPSA45
Text: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB (nA) hFE @ VCE @ IC VCE (SAT) @ IC Cob fT NF toff CODE (V) MPSA25 NPN DARLINGTON EBC MIN 40 (V) *VCES MIN 40* 30 *hFE (1kHZ) MIN MAX 10,000 - 5.0 100 1.50
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MPSA25
MPSA26
MPSA27
MPSA28
PN3638A
PN3639
PN3640
PN3568
MPSA65
MPSA25
MPSA26
MPSA27
MPSA28
MPSA29
MPSA42
MPSA44
MPSA45
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BEC npn
Abstract: MJE13003 transistor MX-MICROELECTRONICS TO-251 PACKAGE MJE13003 power switch MTE13001 600 servo controler MJE13002 2SB772
Text: MX-MICROELECTRONICS TO-251 PACKAGE Applied widely for: • • • Applied for power drive power switch . Applied foe energy saving lights,regulators and power switch circuits. DT combined transistors,applied for communication controlers and servo motor modulation.
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O-251
2SB772
2SD882
MTE13001
MJE13002
MJE13003
MXB1184L
MXD1760L
BEC npn
MJE13003 transistor
MX-MICROELECTRONICS TO-251 PACKAGE
power switch
600 servo
controler
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SE5035
Abstract: vhf amplifier RF POWER TRANSISTOR 100MHz
Text: Datasheet C C ItfM l . • — SE5035 NPN SILICON RF TRANSISTOR Semiconductor Corp. JEDEC T O -7 2 CASE BEC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors
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SE5035
SE5035
100yA
200MHz
200MHz
100MHz
213MHz,
vhf amplifier
RF POWER TRANSISTOR 100MHz
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KSC5305D NPN SILICON TRANSISTOR TO-220 HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • Built-in F ree-w h eelin g D iode m akes efficient anti saturation operation • S u itable for half bridge light ballast Applications • N o need to interest an h F E valu e bec au se of low variab le storage-tim e spread
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KSC5305D
O-220
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100VJ
Abstract: bd950 BD949 BD952 BD954 BD956
Text: Q5-BEC-19S7 12=44 FROM 01132794449 TO MftGNftTEC P.02/08 B0950 BD954 IVI/\C3 IMA BD952 BD956 MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE 9.65 r 19 r.82 10.66 .4 82. 5 33 3 S3 D ia . 4.08 H I 1.39 2-66 r 3.42 1.01 1 52 Rad. r Q_ £- PNP POWER TRANSISTORS
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05-DEC-1997
BD950
BD952
BD954
BD956
TQ-220
BD949
220AB
T0220
100VJ
BD949
BD956
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KT802A
Abstract: KT802 DSAGER00035 K03J4
Text: C jxejiano B CGGP • . • : '•• o A. c : n o P T TPA1I3HCTOP T K ÏIâ KT802Â?:; /-.v SjiësKTp oHop hpexHH lia 3 aK aa-H âpH j Bec npiiôopa 6es .HâKHÆHoro ^ jia n u a 22 . V v .% ^ \ ! ■\ ,1/ r,W.—-—-—i—-,•. äSeKTpHqecKHe napâMëTpbi npH 'T c = ~f25°C -h
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KT802Â
KT802Ä
caM0B036y
KT802A
KT802
DSAGER00035
K03J4
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marking 1A
Abstract: TMPT918 pt2222a
Text: NPN TRANSISTORS S O T -2 3/T O -23 6 A B 3 ELECTRICAL CHARACTERISTICS at T . = 25°C V V BR CBO v lBR)CEO Vishiebo Max. @ V CB Device Type v CE(sat) DC Current Gain ^CBO hFE hFE @ lc @ v ce Max. @ lc Min. Max. (mA) (V) (V) (nA) (V) 20 5.0 100 20 110 220 2.0
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BCW31
BCW32
BCW33
BCW60A
BCW60B
BCW60C
BCW60D
BCW65A
BCW65B
BCW66F
marking 1A
TMPT918
pt2222a
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t2221
Abstract: 50J301 pt5088
Text: NPN TRANSISTORS ELECTRICAL CHARACTERISTICS a t Tt = 25 C A M a rk in g T ype 3 1 O D e vice V T BB CEO V LBfljESO M ax. @ VCB (V> (V) v CE(aat) DC C u rre n t G ain ^CBO <nA) (V) h FE h FE @ i c @ v CE Max. @ lc M in. M ax. (m A ) (V) (V) (m A ) lr M in. @ lc
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PT918
T2221
PT2221A
PT2222
PT2222A
50J301
pt5088
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TMPTA06
Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Text: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE
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T-23/TO
-236A
TMPT2222A
TMPT3904
TMPT4401
TMPT5089
TMPT6427
TMPTA06
TMPTA42
marking 1p
marking 1R NPN
BEC npn
V7560
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BCX29
Abstract: BF199 RF Bf240 BF906 CEB npn BF368 BF199 BCX25 BCX26 BCX28
Text: I N D U S T R I A L T R A N S I S T O R S TO-92 These devices are special prodbcts ranges intended fo r use in applications w hich require well specified high perform ing devices like high q u a lity am plifier differen tial input, driver stage. NPN PN P
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BCX25
BCX26
BCX27
BCX28
BCX29
BCX30
BCX45
BCX46
BCX47
BCX48
BF199 RF
Bf240
BF906
CEB npn
BF368
BF199
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transistores
Abstract: AMPLIFICADOR PE210 PE108 oscilador amplificador de 400 w amplificador de RF PE109 amplificadores de audio amplificador transistor audio
Text: 50E D • ñ2315ím GODOODS T ■ T-2-cL-2A -SID MICROELETRÔNICA S/A Tipo Pol. Emcaps. Term 321 PC107 PNP T092 EBC PC108 PNP T092 EBC PC109 PE107 PE108 PE109 PE155 PE210 PE254 PE255 PE422 PE423 BD135 PNP NPN NPN
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02312flM
PC107
PC108
PC109
PE108
PE109
T0126
BD138
transistores
AMPLIFICADOR
PE210
oscilador
amplificador de 400 w
amplificador de RF
amplificadores de audio
amplificador transistor audio
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n3904
Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in
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mpsh17
mpsh10
bf374
bf375
bf959
mps918
n3904
2n3903
2n4400
mps2369
CEB npn
BF509
pnp BF959
BF240 CEB
BF255
BF371 MOTOROLA
MPSH81
BF241 CEB
MPS3640
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Untitled
Abstract: No abstract text available
Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE (V) (V) (V) W e v CE lC hFE VC BO v CEO v EBO •CBO » VCB0 (V) (V) (mA) VCE(S/IlT ) 0 i C Cob (V) (mA) »T NF •off <PF) (MHz) (dB) *c * MPSA25 NPN DARLINGTON EBC MIN 40
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MPSA25
MPSA26
MPSA27
MPSA28
MPSA29
PN3640
PN3639
PN3569
PN3638A
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S100 NPN Transistor
Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF
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fl23SbOS
00Q4507
Q62702-F574
S100 NPN Transistor
BF603
S100 transistor
BF503
Q62702-F574
S100
S400
transistor 503
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2SD1849
Abstract: No abstract text available
Text: Power Transistors 2SOT849 2SD1849 Silicon NPN Triple-Diffused Planar Type Package Dimensions Horizontal Deflection Output • Features • • • • • • Dam per diode built-in Minimizes external com ponent counts and simplifies circuitry High breakdown voltage, high reliability
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2SOT849
2SD1849
2SD1849
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PGI*372
Abstract: PGI367 PGI368 PGI369 PGI370 PGI371 PGI373 PGI374 PGI375
Text: 0 0 4 3 592 • ’.ir.-.',- ; A~P i ELECTRONres •; INC .1^3 •# W ^DDHBS^B 10 AMP NPN PLANAR TO-61 isolated a 0000117 J - " -.P- ’ 60 MHz (typical) 40 WATT at 100°0 PGI367 MAXIMUM RATINGS at 25 °0 * PG1368 PG1371 PG1374 PGI369 PG1372 PG1375 Collector-Base VoLtage
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13AQ117
-r-33-n
PGI367
PGI368
PGI370
PGI371
PGI373
PGI374
PGI369
PGI372
PGI*372
PGI374
PGI375
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S100 NPN Transistor
Abstract: No abstract text available
Text: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .
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GGQ4507
E--08
S100 NPN Transistor
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