PGI*372

Abstract: PGI367 PGI368 PGI369 PGI370 PGI371 PGI373 PGI374 PGI375
Contextual Info: 0 0 4 3 592 • ’.ir.-.',- ; A~P i ELECTRONres •; INC .1^3 •# W ^DDHBS^B 10 AMP NPN PLANAR TO-61 isolated a 0000117 J - " -.P- ’ 60 MHz (typical) 40 WATT at 100°0 PGI367 MAXIMUM RATINGS at 25 °0 * PG1368 PG1371 PG1374 PGI369 PG1372 PG1375 Collector-Base VoLtage

Contextual Info: PG1371 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)5.0

PGI*372

Abstract: PGI367 PGI368 PGI369 PGI373 PGI374 PGI375
Contextual Info: 0043 5 9 2 A P I ELECTRONICS H DE | 0 0 4 3 S T E 4M T ~33~// 13 A P I 17 TilC 0000117 5 10 AMP NPN PLANAR T0-61 isolated 60 MHz (typical) 40 WATT at 100°G MAXIMUM RATINGS at 25°C PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 Collector-Base VoLtage 80 70 Emitter-Base Voltage •

pg2360

Abstract: A 61
Contextual Info: • Linear hFE from 50 mA to 10 amps • Low saturation voltage at maximum collector current • High frequency ft = 60 MHz typical • High voltage, BVceoi. u. i to 100 volts fMsL .-te.1 .ter, -v hF E hFE (s u s ) o BV ceo Min Max 8 8 8 8 20 40 20 40 20