Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BD954 Search Results

    SF Impression Pixel

    BD954 Price and Stock

    ROHM Semiconductor BD9540EFV-E2

    IC REG CTRLR BUCK 28HTSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BD9540EFV-E2 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.71
    		Buy Now
    Mouser Electronics BD9540EFV-E2
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Chip1Stop BD9540EFV-E2 200
    • 1 -
    • 10 -
    • 100 $2.13
    • 1000 $2.13
    • 10000 $2.13
    		Buy Now

    Others BD9540EFV-SE2

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange BD9540EFV-SE2 1,930
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Others BD9540EFV-E2

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange BD9540EFV-E2 1,929
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    BD954 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BD954 Continental Device India TO-220 Plastic Package Original PDF
    BD954 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BD954 Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan PDF
    BD954 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BD954 Magnatec Silicon Epitaxial Base PNP Power Transistors Scan PDF
    BD954 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD954 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD954 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD954 Unknown Transistor Replacements Scan PDF
    BD954 Unknown Cross Reference Datasheet Scan PDF
    BD954 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD954 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD954 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD9540EFV-E2 ROHM 2ch Switching Regulators for Desktop PC; Package: HTSSOP-B28; Constitution materials list: Packing style: Embossed Tape And Reel; Package quantity: 2500; Minimum package quantity: 2500; Original PDF
    BD954F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BD954F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD954F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BD954 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD951

    Abstract: BD949 BD950 BD952 BD953 BD954 BD955 BD956
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956


    Original     		PDF O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD951 BD949 BD950 BD952 BD953 BD954 BD955 BD956

    bd950

    Abstract: BD952 BD956
    Text: BD950 BD954 BD952 BD956 MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE 9.65 10.66 4.82 5.33 3.83 Dia. 4.08 4.19 4.82 PNP POWER TRANSISTORS 1.14 1.39 9.01 9.52 12.70 13.71 2.66 3.42 1.01 Rad. 1.52 1 2 3 PNP Transistors in a plastic TO–220 package.


    Original     		PDF BD950 BD954 BD952 BD956 BD949 220AB bd950 BD952 BD956

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS


    Original     		PDF O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956

    BD9540

    Abstract: No abstract text available
    Text: Hi-performance Regulator IC Series for PCs 2ch Switching Regulators for Desktop PC No.09030EBT07 BD9540EFV ●Description BD9540EFV is a 2ch switching regulator synchronous controller that can generate low output voltages 0.75V to 5.5V . High efficiency for the switching regulator can be achieved due to its external N-MOSFET power transistor. The IC also


    Original     		PDF 09030EBT07 BD9540EFV BD9540EFV R0039A BD9540

    BD951

    Abstract: BD952 BD949 BD950 BD953 BD954 BD955 BD956
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS


    Original     		PDF O-220 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD951 BD952 BD949 BD950 BD953 BD954 BD955 BD956

    mp6k61

    Abstract: BD9540 vmosfet BD9540EFV lg lcd monitor circuit diagram HTSSOP-B28 rohm capacitor 1005 x7r VOUT21
    Text: Hi-performance Regulator IC Series for PCs 2ch Switching Regulators for Desktop PC No.09030EBT07 BD9540EFV ●Description BD9540EFV is a 2ch switching regulator synchronous controller that can generate low output voltages 0.75V to 5.5V . High efficiency for the switching regulator can be achieved due to its external N-MOSFET power transistor. The IC also


    Original     		PDF 09030EBT07 BD9540EFV BD9540EFV R0039A mp6k61 BD9540 vmosfet lg lcd monitor circuit diagram HTSSOP-B28 rohm capacitor 1005 x7r VOUT21

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    Untitled

    Abstract: No abstract text available
    Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952,954,956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90


    OCR Scan     		PDF BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956

    Untitled

    Abstract: No abstract text available
    Text: BD950; 952 BD954; 956 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended for use in a wide range o f power amplifiers and for switching applications.


    OCR Scan     		PDF BD950; BD954; O-220 BD949; BD950 BD950 BD952. BD054

    bd955

    Abstract: BD953F bd950 BD949F BD950F BD951F BD952F BD954F BD955F BD956F
    Text: BD949F; BD951F BD953F; BD955F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD950F, BD952F, BD954F and BD956F. QUICK REFERENCE DATA 953F 955F 60


    OCR Scan     		PDF BD949F; BD951F BD953F; BD955F BD950F, BD952F, BD954F BD956F. BD949F bd955 BD953F bd950 BD950F BD952F BD955F BD956F

    100VJ

    Abstract: bd950 BD949 BD952 BD954 BD956
    Text: Q5-BEC-19S7 12=44 FROM 01132794449 TO MftGNftTEC P.02/08 B0950 BD954 IVI/\C3 IMA BD952 BD956 MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE 9.65 r 19 r.82 10.66 .4 82. 5 33 3 S3 D ia . 4.08 H I 1.39 2-66 r 3.42 1.01 1 52 Rad. r Q_ £- PNP POWER TRANSISTORS


    OCR Scan     		PDF 05-DEC-1997 BD950 BD952 BD954 BD956 TQ-220 BD949 220AB T0220 100VJ BD949 BD956

    bd950

    Abstract: 80954 b0952 B0950 BD949 BD954 USA060-1
    Text: BD950; 952 BD954; 956 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. W ith the ir n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.


    OCR Scan     		PDF BD950; BD954; T0-220 BD949; BD950J O-22cturer BD950 Z82145 7Z82142 80954 b0952 B0950 BD949 BD954 USA060-1

    BD954

    Abstract: No abstract text available
    Text: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 L BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CO N FIG U RA TIO N 1. BASE 2. C O L L E C T O R 3. EM ITTER


    OCR Scan     		PDF BD949, BD950, BD951, BD953, BD955 BD952, BD954, BD956 BD954

    bd950

    Abstract: b0952 k 952 BD949 BD954 IEC134 T-33-lf BD949 Philips philips ET-E 60
    Text: BD950; 952 BD954; 956 J^ PHILIPS INTERNATIONAL SbE D m 711002b 0Cm310fl 3bb « P H I N 7 ^ 3 3 -/ ? SILICON EPITAXIAL B A SE POW ER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a w ide range o f power am plifiers and fo r switching applications.


    OCR Scan     		PDF BD950; BD954; 711002b 0Cm310fl T-33-lf T0-220 BD949; BD950 b0952 k 952 BD949 BD954 IEC134 T-33-lf BD949 Philips philips ET-E 60

    952F

    Abstract: bd955 BD949F BD950F BD951F BD953F BD954F BD955F 956F 954F
    Text: BD950F; 952F BD954F; 956F I^ SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F. Q U ICK R E F E R E N C E D A TA Collector-base voltage


    OCR Scan     		PDF BD950F; BD954F; OT186 BD949F, BD951F, BD953F BD955F. BD950FJ OT186. BD950F 952F bd955 BD949F BD951F BD954F BD955F 956F 954F

    N3BB

    Abstract: D952
    Text: BD950; 952 BD954; 956 J^ PHILIPS INTERNATIONAL SbE D • 711002b 004310Ô 3bb ■ P H I N T-33- n SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. With their n-p-n complements BD949; 9 5 1 ; 9 5 3 and 9 5 5 they are intended fo r use in a w ide range of power amplifiers and fo r switching applications.


    OCR Scan     		PDF BD950; BD954; 711002b BD949; BD950i T--33--19 N3BB D952

    B0952

    Abstract: b0951 BD951 BD954 b0949 B0950 bd955 npn transistors,pnp transistors BD949 BD950
    Text: CDU BD949, 951, 953, 955 BD950, 952, 954, 956 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN C O N FIG U R AT IO N 1. B A S E 2. C O L L E C T O R


    OCR Scan     		PDF BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 B0952 b0951 BD951 BD954 b0949 B0950 npn transistors,pnp transistors BD949 BD950

    Untitled

    Abstract: No abstract text available
    Text: BD950F; 952F BD954F;956F _ SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.


    OCR Scan     		PDF BD950F; BD954F OT186 BD949F, BD951F, BD953F BD955F. BD950F bb53T31 D034SAO

    Untitled

    Abstract: No abstract text available
    Text: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) @Tc=25°c teo ^CBO (V) Min ^CEO ^EBO (V) Min (V) Min 2SB858C 70 60 5 40 4 1 2SB858D 70 60 5 40 4 1 BD240 55 45 5 30 2 200


    OCR Scan     		PDF O-220 2SB858C 2SB858D BD240 BD240A BD240B BD240C BD242 BD242A BD242B

    538L

    Abstract: No abstract text available
    Text: BD950F; 952F _ LI PHILIPS INTERNATIONAL SbE D • R nQ fidF-3 5 S E _ 7 1 1 D Ô 2 k> D D M 3 1 1 b 432 ■ P H I N - — SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SO T186 envelope w ith an electrically insulated mounting base.


    OCR Scan     		PDF BD950F; DDM311b 538L