BDT92 Search Results

BDT92 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
BDT92	Philips Semiconductors	Silicon Epitaxial Base Power Transistors	Original	PDF
BDT92	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
BDT92	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BDT92	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BDT92	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT92	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BDT92	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDT92	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDT92	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDT92	Unknown	Transistor Replacements	Scan	PDF
BDT92	Unknown	Transistor Replacements	Scan	PDF
BDT92	Philips Semiconductors	SILICON EPITAXIAL BASE POWER TRANSISTORS	Scan	PDF
BDT92F	Philips Semiconductors	Silicon Epitaxial Power Transistors	Original	PDF
BDT92F	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

BDT92F	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT92F	Philips Semiconductors	SILICON EPITAXIAL POWER TRANSISTORS	Scan	PDF

BDT92 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BDT92 Abstract: BDT91 Text: SavantIC Semiconductor Product Specification BDT92 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BDT91 APPLICATIONS ·For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter	Original	BDT92 O-220C BDT91 BDT92 BDT91	PDF
BDT93 Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96	Original	BDT91/93/95 BDT91; BDT93; BDT95 BDT92/94/96 BDT91 BDT93 BDT93 BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200	PDF
BDT92 Abstract: BDT91 Text: Inchange Semiconductor Product Specification BDT92 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type BDT91 APPLICATIONS ·For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1	Original	BDT92 O-220C BDT91 BDT92 BDT91	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent	PDF
D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220	PDF
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100	PDF
2009-6F Abstract: No abstract text available Text: BDT92F; BDT94F BDT96F PHILIPS INTERNATIONAL SbE ]> • 711DÖEfc> Q 0 4 3 3 M D S13 ■ P H I N T -3 3 -O t SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOT186 envelope with an electrically insulated mounting base.	OCR Scan	BDT92F; BDT94F BDT96F aSOT186 BDT91F, BDT93Fand BDT95F. BDT92F 711Qfl5b T-33-09 2009-6F	PDF
BDT94 Abstract: BDT96 BDT93 SOT92 BDT91 BDT92 BDT95 IEC134 Text: BDT92 BDT94 BDT96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general am plifier and switching applications. N-P-N complements are BDT91, BDT93 and BDT95. Q UICK REFERENCE D A T A	OCR Scan	BDT92 BDT94 BDT96 BDT91, BDT93 BDT95. BDT94 D03M7AB BDT96 SOT92 BDT91 BDT92 BDT95 IEC134	PDF
Untitled Abstract: No abstract text available Text: BDT91F; BDT93F BDT95F PHILIPS INTERNATIONAL SbE D • 7 1 1 D Ô 2 b G G M 3 3 3 D b74 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F.	OCR Scan	BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. OT186.	PDF

BDT91F Abstract: BDT92F BDT94F BDT95F BDT96F BDT96 Text: BDT92F; BDT94F BDT96F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F. QUICK REFERENCE DATA BDT92F 94F 96F -VC BO	OCR Scan	BDT92F; BDT94F BDT96F aSOT186 BDT91F, BDT93Fand BDT95F. bdt92f DO3470S BDT91F BDT95F BDT96F BDT96	PDF
bdt95a Abstract: BDT96 BDT93 BDT91 BDT92 BDT94 BDT95 Text: \ M A G IN IA TEC BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P com plem ents are BDT92, BDT94 and BDT96.	OCR Scan	BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT93 bdt95a BDT96 BDT91 BDT92 BDT95	PDF
BDT96 Abstract: No abstract text available Text: BDT92 BDT94 BDT96 PHILIPS INTERNATIONAL SbE D • 7110fi2b 0043332 447 ■ P H I N T-3J-Z1 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications.	OCR Scan	BDT92 BDT94 BDT96 7110fi2b BDT91, BDT93 BDT95. O-220. BDT96	PDF
BDT95 Abstract: No abstract text available Text: _ y v _ BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96.	OCR Scan	BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. DBDT93 BDT95	PDF
Untitled Abstract: No abstract text available Text: BDT92F; BDT94F BDT96F _ y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.	OCR Scan	BDT92F; BDT94F BDT96F aSOTl86 BDT91F, BDT93Fand BDT95F. BDT92F	PDF
Untitled Abstract: No abstract text available Text: _ y v _ BDT92 BDT94 BDT96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio output stages and general amplifier and switching applications. N-P-N complements are BDT91, BDT93 and BDT95.	OCR Scan	BDT92 BDT94 BDT96 BDT91, BDT93 BDT95.	PDF
BDT95 Abstract: BOT93 BDT93 BDT96 BOT95 BDT91 BDT92 BDT94 Text: BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96. QUICK REFERENCE DATA	OCR Scan	BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT93 Q3477M BDT95 BOT93 BDT96 BOT95 BDT91 BDT92	PDF
T-33-O Abstract: BDT94F BDT91F BDT92F BDT95F BDT96F 043341 Text: BDT92F; BDT94F BDT96F I SbE T> PHILIPS INTERNATIONAL m 7110ÖEb 004334G 513 BIPHIN SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each inaSOT186 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.	OCR Scan	BDT92F; BDT94F BDT96F 711002b DQ4334G T-33-O inaSOT186 BDT91F, BDT93Fand BDT95F. T-33-O BDT91F BDT92F BDT95F BDT96F 043341	PDF
Untitled Abstract: No abstract text available Text: BDT91F; BDT93F BDT95F JV SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. QUICK REFERENCE DATA BDT91F 93F 95F	OCR Scan	BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F 003477b	PDF
BDT91F Abstract: BDT92F BDT93F BDT95F BDT96F Text: BDT91F; BDT93F BDT95F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. Q UICK REFERENCE D A T A BDT91F 93F 95F	OCR Scan	BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. BDT91F OT186. bbS3T31 BDT92F BDT95F BDT96F	PDF

Privacy Settings

BDT92 Search Results

BDT92 Datasheets (16)

BDT92 Datasheets Context Search

BDT92

BDT93

BDT92

BUV48I

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

"Tektronix 475"

D42C5

mje521 equivalent

2009-6F

BDT94

Untitled

BDT91F

bdt95a

BDT96

BDT95

Untitled

Untitled

BDT95

T-33-O

Untitled

BDT91F