BDT32DF Search Results

BDT32DF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BDT32DF		Philips Semiconductors	Silicon Epitaxial Power Transistors		Original	PDF
BDT32DF		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF

BDT32DF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: • BDT32F; 32AF BDT32BF; 32CF^ BDT32DF bbSBTBl 0 0 M 7 0 S 1 ■ N AMER PHILIPS/DISCRETE 2SE D J V T-zz-n SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed	OCR Scan	PDF	BDT32F; BDT32BF; BDT32DF OT186 BDT31F, BDT31AF, BDT31BF, BDT31CF, BDT31DF,
32-AF Abstract: eto81 BDT31AF BDT31BF BDT31CF BDT31DF BDT31F BDT32BF BDT32DF BDT32F Text: • 1^53131 0011705 1 ■ BDT32F; 32AF 55E J> N AMER PHILIPS/DISCRETE BDT32DF 32° Fr y ^ T-3S-J SILICON EPITAXIAL P O W E R TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed	OCR Scan	PDF	bb53131 BDT32F; BDT32BF; BDT32DF OT186 BDT31F, BDT31AF, BDT31BF, BDT31CF, BDT31DF. 32-AF eto81 BDT31AF BDT31BF BDT31CF BDT31DF BDT31F BDT32BF BDT32DF BDT32F
R3309 Abstract: 31DF 4 7 31af BDT31F R3307 31df MSI MS-5 IS551 BDT31DF BDT32AF Text: • ^53=131 OGlTbñi 7 BDT31F; 31AF BDT31BF; 31CF BDT31DF 2SE D N AMER PHILIPS/DISCRETE r - 3 3 - 0 7 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envGlope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed	OCR Scan	PDF	BDT31F; BDT31BF; BDT31DF r-33-07 OT186 BDT32F, BDT32AF, BDT32BF, BDT32CF, BDT32DF. R3309 31DF 4 7 31af BDT31F R3307 31df MSI MS-5 IS551 BDT31DF BDT32AF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Untitled Abstract: No abstract text available Text: • ^53131 o a n b a i 7 N AMER PHILIPS/DISCRETE BDT31F; 31AF BDT31BF; 31CF BDT31DF 3SE D _ A r 3 3 - 0 7 - SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base.	OCR Scan	PDF	BDT31F; BDT31BF; BDT31DF OT186 BDT32F, BDT32AF, BDT32BF, BDT32CF, BDT32DF. T-33-09
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	PDF	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11