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    BD 234 Search Results

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    BD 234 Price and Stock

    onsemi BD234G

    TRANS PNP 45V 2A TO126
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    DigiKey BD234G Bulk 61 1
    • 1 $0.85
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    Rochester Electronics BD234G 14,410 1
    • 1 $0.3958
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    • 100 $0.3721
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    Flip Electronics BD234G 480
    • 1 $0.23
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    onsemi BD234

    TRANS PNP 45V 2A TO126
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    DigiKey BD234 Bulk
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    Rochester Electronics BD234 1,500 1
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    ROHM Semiconductor BD4234NUX-E2

    Switching Voltage Regulators CONTROL IC
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    Mouser Electronics BD4234NUX-E2 8,000
    • 1 $1.64
    • 10 $1.4
    • 100 $1.07
    • 1000 $0.746
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    Skyworks Solutions Inc SI8234BB-D-IS1R

    Galvanically Isolated Gate Drivers 2.5 kV 8 V UVLO HS/LS isolated gate driver
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    Mouser Electronics SI8234BB-D-IS1R 15,212
    • 1 $3.71
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    Skyworks Solutions Inc SI8234BB-D-IMR

    Galvanically Isolated Gate Drivers 2.5 kV 8 V UVLO HS/LS isolated gate driver
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    Mouser Electronics SI8234BB-D-IMR 8,032
    • 1 $3.82
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    Find more BD 234 price and stock on Findchips.com

    BD 234 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BD234 Central Semiconductor Leaded Power Transistor General Purpose Original PDF
    BD234 Continental Device India Plastic Power Transistors Original PDF
    BD234 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    BD234 On Semiconductor Plastic Medium Power Silicon NPN Transistor Original PDF
    BD234 On Semiconductor BD234 - TRANSISTOR 2 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN, BIP General Purpose Power Original PDF
    BD234 Philips Semiconductors Silicon Epitaxial-Base Power Transistors Original PDF
    BD234 STMicroelectronics Silicon PNP Transistor Original PDF
    BD234 Various Russian Datasheets Transistor Original PDF
    BD234 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BD234 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
    BD234 Motorola Motorola Transistor Datasheets Scan PDF
    BD234 Motorola The European Selection Data Book 1976 Scan PDF
    BD234 Motorola European Master Selection Guide 1986 Scan PDF
    BD234 Motorola Plastic medium power silicon PNP transistor. 2 A, 45 V, 25 W. Scan PDF
    BD234 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD234 Mullard Quick Reference Guide 1977/78 Scan PDF
    BD234 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD234 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD234 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD234 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BD 234 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO126

    Abstract: CDIL BD238 BD233 BD234 BD238 BD235 BD236 BD237 bd 238 P BD238 continental
    Text: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS BD 233, 235, 237 BD 234, 236, 238 TO126 Plastic Package EC B Medium Power Liner and Switching Applications


    Original     		PDF BD233 BD235 BD237 BD234 BD236 BD238 C-120 Rev170701 TO126 CDIL BD238 BD238 BD237 bd 238 P BD238 continental

    P1043-BD

    Abstract: XP1043-BD XP1043-QH DM6030HK TS3332LD XP1043 ts333
    Text: 12.0-16.0 GHz GaAs MMIC Power Amplifier P1043-BD January 2009 - Rev 23-Jan-09 Features 32 dBm Saturated RF Power 41 dBm Output IP3 Linearity 17 dB Gain Control On-Chip Power Detector 100% RF Testing General Description The XP1043-BD is a linear power amplifier that operates over


    Original     		PDF P1043-BD 23-Jan-09 XP1043-BD XP1043-BD-000V XP1043-BD-EV1 XP1043 P1043-BD XP1043-QH DM6030HK TS3332LD ts333

    BD233

    Abstract: BD235 BD237 transistor 45 f 123 bd233 T BD235 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR NPN TO-126 FEATURES yComplement to BD 234/236/238 respectively MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage


    Original     		PDF O-126 BD233/235/237 O-126 BD233 BD235 BD237 BD233 BD235 BD237 transistor 45 f 123 bd233 T BD235 TRANSISTOR

    bd237

    Abstract: BD233
    Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units


    Original     		PDF BD233/235/237 O-126 BD233 BD235 BD237 bd237 BD233

    transistor BD 325

    Abstract: BD235STU
    Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD233/235/237 O-126 BD233 BD235 BD237 transistor BD 325 BD235STU

    BD233

    Abstract: BD235 BD237
    Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD233/235/237 O-126 BD233 BD235 BD237 BD233 BD235 BD237

    BD233

    Abstract: BD235 BD237
    Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD233/235/237 O-126 BD233 BD235 BD237 BD233 BD235 BD237

    BD237

    Abstract: bd235
    Text: BD233/235/237 NPN TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECTOR 3.200 3 10.60 0 11.00 0 2 0.000 0.300 1 Features — 3.900 4.100 3.000 3. BASE 2.100 2.300 Complement to BD 234/236/238 respectively 1.170 1.370 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF BD233/235/237 O-126 O-126 BD233 BD235 BD237

    chime

    Abstract: STK 402 series chime 4 tone voice record to SD card SDV-128P LKEH-402FV-RYGB stk 402 transistor bd 202 LKEH-302FE-RYG LKEH-202
    Text: 1598-2012.qxp:QuarkCatalogTempNew 9/4/12 4:32 PM Page 1598 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 18 Annunciators, Alarms, Lighting and Annunciator Combination BD Series Audible Alarm ᭤ Field Programmable with MP3 Sound Files and Optional SD Card* ᭤ Adjustable Sound Level from 0 dB to


    Original     		PDF BSV-24P-W BD-24E-K BD-24E-J BSV-24P-D BSV-24P-S IP-20 RFV-24F-R RFV-24F-Y WG-03BT-R WG-03M2T-R chime STK 402 series chime 4 tone voice record to SD card SDV-128P LKEH-402FV-RYGB stk 402 transistor bd 202 LKEH-302FE-RYG LKEH-202

    BD 139 140

    Abstract: P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ID-2250
    Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2009 - Rev 19-Jan-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1026-BD 19-Jan-09 MIL-STD-883 XP1026-BD-000V XP1026-BD-EV1 XP1026-BD BD 139 140 P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD-000V XP1026-BD-EV1 ID-2250

    max cw 4004

    Abstract: XP1026-BD-EV1 30SPA0553 DM6030HK P1026-BD XP1026-BD XP1026-BD-000V ID213
    Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1026-BD 25-Jan-10 MIL-STD-883 pa026-BD-EV1 XP1026-BD max cw 4004 XP1026-BD-EV1 30SPA0553 DM6030HK P1026-BD XP1026-BD-000V ID213

    Untitled

    Abstract: No abstract text available
    Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2009 - Rev 15-Feb-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1026-BD 15-Feb-09 MIL-STD-883 XP1026-BD-000V XP1026-BD-EV1 XP1026-BD

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


    OCR Scan     		PDF BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140

    SDT 9202

    Abstract: No abstract text available
    Text: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A


    OCR Scan     		PDF BD136 O-126 O-220 SDT 9202

    amplificateur

    Abstract: vertical tv deflexion BD233 bo236 BD NPN transistors bd 233 bd 237
    Text: NPN SILICON TRANSISTORS, E P IT A X IA L BASE BD 233 TRANSISTORS SILICIUM NPN, BASE EPITAXIEE gg 2 .3 5 BD 237 Compl. o f BD 234, BO 236, BD 238 P R E LIM IN A R Y D A T A NOTICE PRELIMINAIRE These transistors are intended fo r complemen­ ta ry or quasi complementary sym etry amplifiers :


    OCR Scan     		PDF

    BD237

    Abstract: BD 235 BD233 SD235 BD235 BD 100 V BD 237 to 126 leistungstransistoren 32-DIN BD NPN transistors
    Text: BD 233 * BD 235 - BD 237 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Audio-Treiber- und Endstufen Applications: Audio driver and output stages Besondere Merkmale: • Hohe Spitzenleistung Features: • High peak power


    OCR Scan     		PDF 2DIN125A 150mA1) BD237 BD 235 BD233 SD235 BD235 BD 100 V BD 237 to 126 leistungstransistoren 32-DIN BD NPN transistors

    LT 238

    Abstract: BD 238 BD234
    Text: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­


    OCR Scan     		PDF

    BD 139 N

    Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
    Text: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50


    OCR Scan     		PDF OT-32 BD 139 N TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436

    BD234

    Abstract: bd 236 BD - 100 V Bo 235 BD236 BD238 DIN125A JEDECTO126 din 125a BD 238
    Text: BD 234 •BD 236 •BD 238 'W Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Audio-Treiber- und Endstufen Applications: Audio driver and output stages Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power


    OCR Scan     		PDF

    60V transistor npn 1a

    Abstract: No abstract text available
    Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD233 Symbol Rating VcBO : BD235 : BD237 Unit 45 V


    OCR Scan     		PDF BD233/235/237 BD235 BD237 BD233 60V transistor npn 1a

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD 234 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and


    OCR Scan     		PDF BD234 OT-32 BD234 OT-32 O-126)

    BD233

    Abstract: BD237 BD235 bd233 T BD237-10 BD235 TRANSISTOR
    Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V C ollector Base Voltage


    OCR Scan     		PDF BD233/235/237 BD233 BD235 BD237 BD237 BD235 bd233 T BD237-10 BD235 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V : BD235 60 V : BD237 80


    OCR Scan     		PDF BD233/235/237 BD235 BD237 BD233

    dt5 tuner module

    Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
    Text: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


    OCR Scan     		PDF uPD78023 uPD78024 uPD78P024 IEU-1373A IEU-842A) b427525 devices-9800 SxxxxFE9000 /iSxxxxFT9080 FI78K0 dt5 tuner module op102 ITT Semiconductors D78P0 D0122 ddt237