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    TS333 Price and Stock

    STMicroelectronics TS3333AQPR

    IC VREF SERIES 0.15% 8QFN
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    DigiKey TS3333AQPR Cut Tape 4,439 1
    • 1 $1.51
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    TS3333AQPR Digi-Reel 4,439 1
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    TS3333AQPR Reel 3,000 3,000
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    Avnet Americas TS3333AQPR Ammo Pack 1
    • 1 $1.39
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    TS3333AQPR Reel 22 Weeks 3,000
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    Mouser Electronics TS3333AQPR 3,994
    • 1 $1.35
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    Newark TS3333AQPR Cut Tape 5,189 1
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    STMicroelectronics TS3333AQPR 3,994 1
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    TME TS3333AQPR 1
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    Avnet Silica TS3333AQPR 17 Weeks 3,000
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    Ecliptek Corporation EC2645ETTS-33.333M-TR

    OSC XO 33MHZ 3.3V CMOS SMD
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    DigiKey EC2645ETTS-33.333M-TR Digi-Reel 3,928 1
    • 1 $2.45
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    EC2645ETTS-33.333M-TR Cut Tape 3,928 1
    • 1 $2.45
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    EC2645ETTS-33.333M-TR Reel 3,000 1,000
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    STMicroelectronics TS3330AQPR

    IC VREF SERIES 0.15% 8QFN
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    DigiKey TS3330AQPR Cut Tape 2,593 1
    • 1 $1.46
    • 10 $1.063
    • 100 $0.856
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    TS3330AQPR Digi-Reel 2,593 1
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    TS3330AQPR Reel 3,000
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    Avnet Americas TS3330AQPR Ammo Pack 1
    • 1 $1.53
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    TS3330AQPR Reel 22 Weeks 3,000
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    Mouser Electronics TS3330AQPR 10,473
    • 1 $1.46
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    Newark TS3330AQPR Cut Tape 2,756 1
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    STMicroelectronics TS3330AQPR 10,473 1
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    TME TS3330AQPR 1
    • 1 $1.54
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    Avnet Silica TS3330AQPR 17 Weeks 3,000
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    EBV Elektronik TS3330AQPR 23 Weeks 3,000
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    STMicroelectronics TS3330ACR

    IC VREF SERIES SC70
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    DigiKey TS3330ACR Bulk 3,000
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    Avnet Americas TS3330ACR Reel 20 Weeks 3,000
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    Mouser Electronics TS3330ACR 2,838
    • 1 $1.53
    • 10 $1.37
    • 100 $1.1
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    STMicroelectronics TS3330ACR 2,838 1
    • 1 $1.5
    • 10 $1.34
    • 100 $1.08
    • 1000 $0.89
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    Rochester Electronics TS3330ACR 3,895 1
    • 1 $0.8153
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    Avnet Silica TS3330ACR 17 Weeks 3,000
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    EBV Elektronik TS3330ACR 21 Weeks 3,000
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    STMicroelectronics TS3333AMR

    IC VREF SERIES SOT23-3
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    DigiKey TS3333AMR Bulk 3,000
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    Avnet Americas TS3333AMR Reel 20 Weeks 3,000
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    • 10000 $0.65869
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    Mouser Electronics TS3333AMR
    • 1 $1.53
    • 10 $1.37
    • 100 $1.1
    • 1000 $0.753
    • 10000 $0.668
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    STMicroelectronics TS3333AMR 1
    • 1 $1.5
    • 10 $1.34
    • 100 $1.08
    • 1000 $0.89
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    TS333 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TS3330AQPR STMicroelectronics Integrated Circuits (ICs) - PMIC - Voltage Reference - POWER MANAGEMENT Original PDF
    TS3333AQPR STMicroelectronics IC VREF SERIES 0.15% 8QFN Original PDF

    TS333 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    XU1009-BD

    Abstract: RF Transistor Selection 26TX0555 26TX
    Text: 18.0-36.0 GHz GaAs MMIC Transmitter July 2007 - Rev 27-Jul-07 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain


    Original     		27-Jul-07 MIL-STD-883 XU1009-BD XU1009-BD-000V XU1009-BD-EV1 XU1009 XU1009-BD RF Transistor Selection 26TX0555 26TX PDF

    6OSC0460

    Abstract: DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1
    Text: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Apr-07 Q1000-BD 100KHz MIL-STD-883 XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 XQ1000 6OSC0460 DM6030HK TS3332LD XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 PDF

    DM6030HK

    Abstract: CMM0016 CMM0016-BD TS3332LD tanaka gold wire tanaka epoxy
    Text: 2.0-20.0 GHz GaAs MMIC 1W Power Amplifier October 2006 - Rev 13-Oct-06 CMM0016 Features Chip Diagram Small Size: 2.32x1.30x0.076mm Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable - Fully Matched Unconditionally Stable P1dB: 29 dBm, Typ. @ 18 GHz


    Original     		13-Oct-06 CMM0016 076mm CMM0016-BDis CMM0016-BD DM6030HK CMM0016 CMM0016-BD TS3332LD tanaka gold wire tanaka epoxy PDF

    OC 74 germanium transistor

    Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
    Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		P1020-BD 30-Jan-07 MIL-STD-883 XP1020-BD XP1020-BD-000V XP1020-BD-EV1 XP1020-BD OC 74 germanium transistor P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD-000V power transistor gaas PDF

    CGB7015-BD

    Abstract: CGB7015-BD-000V DM6030HK TS3332LD
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7015-BD Features Chip Layout Low Operating Voltage: 5V 37.0 dBm Output IP3 @ 850 MHz 4.0 dB Noise Figure @ 850 MHz 23.0 dB Gain @ 850 MHz 21.1 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		04-Apr-07 CGB7015-BD CGB7015-BD CGB7015-BD-000V CGB7015-BD-000V DM6030HK TS3332LD PDF

    CGB7016-BD

    Abstract: CGB7016-BD-000V DM6030HK TS3332LD tanaka gold wire current
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7016-BD Features Chip Layout Low Operating Voltage: 5V 34.0 dBm Output IP3 @ 850 MHz 3.8 dB Noise Figure @ 850 MHz 22.4 dB Gain @ 850 MHz 18.4 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		04-Apr-07 CGB7016-BD CGB7016-BD CGB7016-BD-000V CGB7016-BD-000V DM6030HK TS3332LD tanaka gold wire current PDF

    M1000

    Abstract: No abstract text available
    Text: 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		21-Nov-05 M1000 MIL-STD-883 PDF

    tanaka TS3332LD epoxy

    Abstract: No abstract text available
    Text: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Apr-07 Q1000-BD 100KHz MIL-STD-883 XQ1000-BD XQ1000-BD-000V XQ1000-BD-EV1 XQ1000 tanaka TS3332LD epoxy PDF

    Untitled

    Abstract: No abstract text available
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD April 2008 - Rev 02-Apr-08 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original     		02-Apr-08 L1001-BD MIL-STD-883 XL1001 PDF

    varactor diode application

    Abstract: No abstract text available
    Text: 6.8-7.9 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1003-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Apr-07 Q1003-BD 100KHz MIL-STD-883 XQ1003-BD XQ1003-BD-000V XQ1003-BD-EV1 XQ1003 varactor diode application PDF

    P1015-BD

    Abstract: No abstract text available
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		10-Aug-07 P1015-BD MIL-STD-883 XP1015-BD-000V XP1015-BD-EV1 XP1015 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4.5-10.5 GHz GaAs MMIC Receiver R1011-BD May 2008 - Rev 27-May-08 Features LO Integrated LNA, Mixer and LO Buffer Amp 1.6 dB Noise Figure 14.0 dB Conversion Gain BCB Coated Die 100% RF, DC and NF Testing VG3 BUF VD3 IF1 VG4 I VD2 IRM VG2 Q VD1 IF2 LNA General Description


    Original     		27-May-08 R1011-BD XR1011-BD-000V XR1011-BD-EV1 XR1011 PDF

    XP1006-BD

    Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
    Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing


    Original     		XP1006-BD MIL-STD-883 01-Sep-10 XP1006 XP1006-BD X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech PDF

    Untitled

    Abstract: No abstract text available
    Text: 34.0-46.0 GHz GaAs MMIC Image Reject Mixer M1002 December 2005 - Rev 02-Dec-05 Features Chip Device Layout Fundamental Image Reject Mixer 7.0 dB Conversion Loss 20.0 dB Image Rejection +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883


    Original     		02-Dec-05 M1002 MIL-STD-883 PDF

    XA1000

    Abstract: XS1000-BD tanaka gold wire current
    Text: XS1000-BD 7.0-13.0 GHz GaAs MMIC 6-Bit Phase Shifter Rev 01-Sep-10 Features Chip Device Layout • 6-Bit Phase Shifter • LVCMOS/TTL Compatible Digital Control • 5.625° Least Significant Bit LSB • 25 dBm P1dB Input Compression • 100% On-Wafer RF and DC Testing


    Original     		XS1000-BD MIL-STD-883 01-Sep-10 XA1000 XS1000-BD tanaka gold wire current PDF

    XS1001-BD

    Abstract: XA1000 XS1001 XS100 XS10-0 S1001-BD
    Text: 2.5-4.0 GHz GaAs MMIC 6-Bit Phase Shifter S1001-BD October 2009 - Rev 27-Oct-09 Features 6-Bit Phase Shifter LVCMOS/TTL Compatible Digital Control LSB = 5.625º 26 dBm Input P1dB Compression Point 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883


    Original     		27-Oct-09 S1001-BD MIL-STD-883 XS1001-BD-000V XS1001-BD XA1000 XS1001 XS100 XS10-0 PDF

    CGB7011-BD

    Abstract: CGB7011-BD-000V DM6030HK TS3332LD 16720
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7011-BD Features Features 36.0 dBm Output IP3 @ 850 MHz 3.4 dB Noise Figure @ 850 MHz 21.7 dB Gain @ 850 MHz 21.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		04-Apr-07 CGB7011-BD CGB7011-BD CGB7011-BD-000V CGB7011-BD-000V DM6030HK TS3332LD 16720 PDF

    D1005

    Abstract: 22DSBA0423 DM6030HK TS3332LD XD1005-BD XD1005-BD-000V XD1005-BD-EV1
    Text: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		16-Jan-07 D1005-BD MIL-STD-883 XD1005-BD-000V XD1005-BD-EV1 XD1005-BD D1005 22DSBA0423 DM6030HK TS3332LD XD1005-BD-000V XD1005-BD-EV1 PDF

    44MPA0478

    Abstract: DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1028-BD 17-Apr-07 MIL-STD-883 XP1028-BD-000V XP1028-BD-EV1 XP1028 44MPA0478 DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD PDF

    Mimix Asia

    Abstract: phase shifter S1000-BD
    Text: 7.0-13.0 GHz GaAs MMIC 6-Bit Phase Shifter S1000-BD May 2008 - Rev 28-May-08 Features 6-Bit Phase Shifter LVCMOS/TTL Compatible Digital Control 5.625° Least Significant Bit LSB 25 dBm P1dB Input Compression 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883


    Original     		28-May-08 S1000-BD XS1000-BD MIL-STD-883 XS1000-BD-000V Mimix Asia phase shifter PDF

    p1014

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		01-Nov-06 APH478 P1014 XP1014 I0005129 XP1006 MIL-STD-883 XP1014-BD-000W XP1014-BD-000V XP1014-BD-EV1 PDF

    tanaka TS3332LD

    Abstract: XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK XP1032-BD
    Text: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


    Original     		12-May-08 P1032-BD MIL-STD-883 parD-000V XP1032-BD-EV1 XP1032-BD tanaka TS3332LD XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler X1002 December 2005 - Rev 08-Dec-05 Features Chip Device Layout Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing


    Original     		08-Dec-05 X1002 125mA MIL-STD-883 PDF

    p1017

    Abstract: No abstract text available
    Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3


    Original     		01-Sep-05 P1017 MIL-STD-883 PDF