BD 104 NPN Search Results

BD 104 NPN Result Highlights (5)

Part	Manufacturer	Description
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
CA3083Z-G	Rochester Electronics LLC	CA3083 - General Purpose High Current NPN Transistor Array
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

BD 104 NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BO 649 Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington	OCR Scan	0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN	PDF
BD 649 Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65 Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington	OCR Scan	fl23SLQS T-33-29 OP-66) 643/BD 645/BD BD647. BD843, BD645. BD647, BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65	PDF
2sc 103 transistor Abstract: transistor BD 430 Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in	OCR Scan	Q62702-D1069 -T-33-OS fl23SbQS BD429 2sc 103 transistor transistor BD 430	PDF
Untitled Abstract: No abstract text available Text: lAiur Data Sheet Linear Array 005152 Benefits • High-frequency performance, typical fî of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design	OCR Scan	LA400 50AL203140 DS86-352LBC	PDF
BD429 Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in	OCR Scan	fl23Sfc Q62702-D1069 BD429 fnb33 D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor	PDF
Untitled Abstract: No abstract text available Text: Philips Com ponents D a ta sh e e t s ta tu s Product specification d a te o f is s u e Apr# 1991 B D S 61/61A / 61B / 61C NPN silicon Darlington power transistors DESCRIPTION PINNING - SOT223 NPN silicon pow er transistors in a m onolithic Darlington circu it in a	OCR Scan	61/61A OT223 OT223) S60/60A/60B/60C. BDS61 BDS61/61A/61B/61C bb53331 DD34532	PDF
BD 104 NPN Abstract: pnp 8 transistor array LA400 npn 8 transistor array BD+104+NPN Text: AT&T Data Sheet oo5i 52 ^ ss Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval	OCR Scan	LA400 50AL203140 DS86-352LBC BD 104 NPN pnp 8 transistor array npn 8 transistor array BD+104+NPN	PDF
pnp 8 transistor array Abstract: BD 104 NPN LA400 ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor Text: AT&T Data Sheet ^ ss oo5i 52 Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval	OCR Scan	LA400 rev400 50AL203140 DS86-352LBC pnp 8 transistor array BD 104 NPN ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor	PDF
Transistor D 799 Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR Text: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G \| MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.	OCR Scan	BD795 BD797 BD799 BD801 BD797 B0801 BD796 BD801 Transistor D 799 transistor BD 522 transistor motorola 114-8 TRANSISTOR bd 147 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: ^3natron P R O -E L E C T R O N P O W E R T R A N S IS T O R S DEVICE POLARITY IC cont. vCEO MAX AMPS MAX VOLTS TYPE BD 130 NPN 15.0 60 BD 142 NPN 15.0 45 BDY 20 NPN 1S.0 60 BDY 29 NPN 30.0 75 BDY 37 NPN 140 16.0 BDY 38 NPN 6.0 40 BDY 39 NPN 15.0 60 BDY 55 NPN	OCR Scan		PDF
BUX 115 Abstract: 2N2646P bux 42 pnp bux ksp1173 2N5662 2N5663 2N6251 KS6118 KS6121 Text: TRANSISTORS DE PUISSANCE NPN TRIPLE DIFFUSÉ COMMUTATION RAPIDE power transistors (NPN triplo diffused fast switching) Ui u. JC VcEO lc max. TYPES / lc V c e sat / >c ! 'b Boitier td + tr ts tf Iß s) Case 113= 1£> »13= 113= 1X3= nxy r» x > nxy no r» 0	OCR Scan		PDF
d947 Abstract: d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951 Text: 5SC D • 023SbOS 3004303 T MSIE<S PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 'T~ 3 04383 7 D BD 612 BD 614 BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 6 2 0 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically	OCR Scan	023SbOS BD612 BD616 Q62702-D947 Q62702-D949 Q62702-D951 Q62702-D953 Q62702-D955 fl23SbGS 000436b d947 d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951	PDF
bcx56 Abstract: BCX54 Bcx56-16 Text: Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount	Original	BCX54 BCX55 BCX56 BCX54, BCX55, OT-89 Bcx56-16	PDF
Untitled Abstract: No abstract text available Text: J BDT65F; BDT65AF ^BDT65BF; BDT65CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.	OCR Scan	BDT65F; BDT65AF BDT65BF; BDT65CF OT186 BDT64F, BDT64AF, BDT64BF BDT64CF. bbS3T31	PDF

BCX56 Abstract: BCX54 BCX54-10 bc 104 npn transistor BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56-10 BCX56-16 Text: Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount	Original	BCX54 BCX55 BCX56 BCX54, BCX55, BCX56 OT-89 BCX54 BCX54-10 bc 104 npn transistor BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56-10 BCX56-16	PDF
BGY200 Abstract: transistor zs 35 2222 861 sot350 Text: Product specification Philips Semiconductors UHF amplifier module BGY200 FEATURES DESCRIPTION • 7.2 V nominal supply voltage The BGY200 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit	OCR Scan	BGY200 SDT350 MSA393 7110fl2ti OT350. transistor zs 35 2222 861 sot350	PDF
bc 104 npn transistor Abstract: Marking BH SOT89 Marking BA SOT89 MARKING BL SOT89 TRANSISTOR BC 187 sot-89 MARKING CODE Ba bc 187 npn transistor BCX56 on BC 187 TRANSISTOR SOT89 bc Text: Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount	Original	BCX54 BCX55 BCX56 BCX54, BCX55, BCX56 OT-89 bc 104 npn transistor Marking BH SOT89 Marking BA SOT89 MARKING BL SOT89 TRANSISTOR BC 187 sot-89 MARKING CODE Ba bc 187 npn transistor on BC 187 TRANSISTOR SOT89 bc	PDF
TRANSISTOR BC 187 Abstract: Marking BA SOT89 on TRANSISTOR BC 187 marking bd sot-89 sot-89 MARKING CODE Ba BC 187 TRANSISTOR bc 187 npn transistor Text: Central BCX54 BCX55 BCX56 Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack	OCR Scan	BCX54 BCX55 BCX56 BCX54, BCX55, OT-89 TRANSISTOR BC 187 Marking BA SOT89 on TRANSISTOR BC 187 marking bd sot-89 sot-89 MARKING CODE Ba BC 187 TRANSISTOR bc 187 npn transistor	PDF
BD 440 NPN transistors Abstract: MARKING BL SOT89 sot89 marking BH BA SOT-89 transistor bd 370 on TRANSISTOR BC 187 transistor marking code HF SOT-89 marking BC Marking BA SOT89 BCX54,115 Text: Central BCX54 BCX55 BCX56 semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack	OCR Scan	BCX54 BCX55 BCX56 BCX54, BCX55, OT-89 CP305, BD 440 NPN transistors MARKING BL SOT89 sot89 marking BH BA SOT-89 transistor bd 370 on TRANSISTOR BC 187 transistor marking code HF SOT-89 marking BC Marking BA SOT89 BCX54,115	PDF
transistor BD 135 Abstract: capacitor J336 TPV8200B bd 109 transistor Text: MOTOROLA Order this document by TPV8200B/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8200B The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.	Original	TPV8200B/D TPV8200B TPV8200B TPV8200B/D* transistor BD 135 capacitor J336 bd 109 transistor	PDF
t056 Abstract: BLY93 2SC765 BDY88 BDY89 MSA8508 RE3797 SE3030 SJ 96 B5022 Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. H H TYPE N o. I I M IN . M A X P c ID E R A T E FREE A IR @ J to C 2 5 'C	OCR Scan	NPN110. Y220a T0126 BD433B BD433C BD435A BD435B BD435C t056 BLY93 2SC765 BDY88 BDY89 MSA8508 RE3797 SE3030 SJ 96 B5022	PDF
transistor BD 135 Abstract: capacitor J336 J336 transistor k 2843 TPV8200B EQUIVALENT OF K 2843 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPV8200B The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza	OCR Scan	TPV8200B TPV8200B 156-C transistor BD 135 capacitor J336 J336 transistor k 2843 EQUIVALENT OF K 2843	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF586 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS "!#1 • Silicon NPN, TO-39 packaged VHF/UHF Transistor • Ft = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, • •	Original	MRF586 300MHz, 234567897ABC MRF586 16D97B	PDF
Untitled Abstract: No abstract text available Text: N AflER P H IL IP S / D IS C R E T E - ^ 5 3 ^ 3 1 2SE D O D l^ S A 1 • BD 241; BD 241A B D 241B ; BD 241C T - 23-// S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier	OCR Scan	BD242; BD241 BD241; BD241A BD241B; BD241C bbS3131 bb53T31	PDF

BD 104 NPN Search Results

BD 104 NPN Result Highlights (5)

BD 104 NPN Datasheets Context Search

BO 649

BD 649

2sc 103 transistor

Untitled

BD429

Untitled

BD 104 NPN

pnp 8 transistor array

Transistor D 799

Untitled

BUX 115

d947

bcx56

Untitled

BCX56

BGY200

bc 104 npn transistor

TRANSISTOR BC 187

BD 440 NPN transistors

transistor BD 135

t056

transistor BD 135

Untitled

Untitled