2N5307
Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
Text: 2N5307 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2N5307
MPSA14
2N5307
CBVK741B019
F63TNR
PN2222N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR 1 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO −45 Vdc Collector −Emitter Voltage VCES −50
|
Original
|
BC327,
BC327-16,
BC327-25,
BC327-40
BC327/D
|
PDF
|
MPSA12
Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
Text: MPSA12 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
MPSA12
MPSA14
MPSA12
CBVK741B019
F63TNR
PN2222N
|
PDF
|
2N5306
Abstract: F63TNR MPSA14 PN2222N CBVK741B019
Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2N5306
MPSA14
2N5306
F63TNR
PN2222N
CBVK741B019
|
PDF
|
k 3683 transistor
Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
Text: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)
|
Original
|
2N6076
k 3683 transistor
BCxxx TRANSISTOR
PN2222N
2N6076
CBVK741B019
F63TNR
small signal transistor
transistor k 3683
transistor k 0247
|
PDF
|
2N5308
Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2N5308
MPSA14
2N5308
PN2222N
TO5 package
D9842
F63TNR
CBVK741B019
PN222N
D74z
transistor k 0247
|
PDF
|
2N3663
Abstract: CBVK741B019 F63TNR PN2222N PN918
Text: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*
|
Original
|
2N3663
PN918
2N3663
CBVK741B019
F63TNR
PN2222N
|
PDF
|
bc 7-25 pnp
Abstract: BC327-16 BC327-25 BC327 pin out bc327 pin out diagram bc327 application note bc327-40 BC32716 BC32725 C 32725
Text: BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −45 Vdc Collector −Emitter Voltage
|
Original
|
BC327,
BC327-16,
BC327-25,
BC327-40
BC327/D
bc 7-25 pnp
BC327-16
BC327-25
BC327 pin out
bc327 pin out diagram
bc327 application note
BC32716
BC32725
C 32725
|
PDF
|
PN2222N
Abstract: 2N6426 CBVK741B019 F63TNR MPSA14 transistor k 0247
Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2N6426
MPSA14
PN2222N
2N6426
CBVK741B019
F63TNR
transistor k 0247
|
PDF
|
2N5770
Abstract: No abstract text available
Text: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol
|
Original
|
2N5770
PN918
2N5770
|
PDF
|
2N5769
Abstract: No abstract text available
Text: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2N5769
PN2369A
2N5769
|
PDF
|
PN2222N
Abstract: BCxxx TRANSISTOR transistor 2001 H1 PN222N D27Z TAPE AMMO PACK TO92 transistor k 0247 TRANSISTOR W2 CBVK741B019 F63TNR
Text: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 PN2222N NSID: D/C1: HTB:B QTY: 10000 SPEC: D9842 SPEC REV:
|
Original
|
CBVK741B019
PN2222N
D9842
F63TNR
PN222N
F63TNR
375mm
PN2222N
BCxxx TRANSISTOR
transistor 2001 H1
PN222N
D27Z
TAPE AMMO PACK TO92
transistor k 0247
TRANSISTOR W2
CBVK741B019
|
PDF
|
CBVK741B019
Abstract: F63TNR MPSA28 MPSA29 PN2222N BCxxx TRANSISTOR
Text: MPSA29 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
MPSA29
MPSA28
CBVK741B019
F63TNR
MPSA29
PN2222N
BCxxx TRANSISTOR
|
PDF
|
transistor 2001 H1
Abstract: PN4275 CBVK741B019 F63TNR PN2222N PN2369A
Text: PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PN4275
PN2369A
transistor 2001 H1
PN4275
CBVK741B019
F63TNR
PN2222N
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2N6426
MPSA14
|
PDF
|
NZT7053
Abstract: 2N7052 2N7053 CBVK741B019 F63TNR PN2222N
Text: 2N7053 2N7052 NZT7053 C E C B C TO-92 C E B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*
|
Original
|
2N7053
2N7052
NZT7053
O-226
OT-223
NZT7053
2N7052
2N7053
CBVK741B019
F63TNR
PN2222N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: : ; : " # ;! - <. $ 4= / / 3/ °
|
Original
|
|
PDF
|
F63TNR
Abstract: PN2222N BS270 CBVK741B019
Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to
|
Original
|
BS270
500mA
400mA,
F63TNR
PN2222N
BS270
CBVK741B019
|
PDF
|
BCxxx TRANSISTOR
Abstract: PN2222N transistor k 0247
Text: : ; : " # ;! - <. $ 4= / / 3/ °
|
Original
|
CBVK741B019
BCxxx TRANSISTOR
PN2222N
transistor k 0247
|
PDF
|
2N6427
Abstract: CBVK741B019 F63TNR MMBT6427 MPSA14 PN2222N transistor bel 100
Text: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
|
Original
|
2N6427
MMBT6427
2N6427
OT-23
MPSA14
CBVK741B019
F63TNR
MMBT6427
PN2222N
transistor bel 100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to
|
Original
|
BS270
500mA
400mA,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
|
Original
|
2N6427
MMBT6427
2N6427
OT-23
MPSA14
|
PDF
|
rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
|
Original
|
MPSH24
MMBTH24
MPSH24
OT-23
MPSH11
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH24
MPSH11
PN2222N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
|
Original
|
FPNH10
|
PDF
|
