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    Infineon Technologies AG BCR-108F-E6327

    TRANS PREBIAS NPN 50V TSFP-3
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    DigiKey BCR-108F-E6327 Reel 39,000
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    BCR108F Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCR108F Infineon Technologies Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V Original PDF
    BCR108F Infineon Technologies NPN Silicon Digital Transistor Original PDF
    BCR108FE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 Original PDF
    BCR108FE6327 Infineon Technologies Digital Transistors - R1= 2,2 kOhm , R2= 47 kOhm Original PDF
    BCR108FE6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSFP-3 T/R Original PDF
    BCR 108F E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 Original PDF

    BCR108F Datasheets Context Search

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    BCR108

    Abstract: BCR108F BCR108L3 BCR108S SEMH10
    Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR108. /SEMH10 BCR108/F/L3 BCR108T/W BCR108S SEMH10 EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S SEMH10

    BCR108

    Abstract: BCR108F BCR108S BCR108W BCW66 bcr1
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108S BCR108W BCW66 bcr1

    BFP620F

    Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
    Text: P B R O D U C T R I E F A new Milestone in Miniaturization of SMD Standard Packages for Discrete Components TSFP stands for Thin Small Flat Package. With a reduced height of max. 0.59 mm vs. 0.8 mm for a SC-75 package and an outline of only 1.2 x 1.2 mm2 for TSFP-3 (vs. 1.6 × 1.6 mm2 for


    Original     		PDF SC-75 SC-75) B114-H7900-X-X-7600 BFP620F TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F

    marking WHS sot23

    Abstract: transistor marking code whs
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108/F/L3


    Original     		PDF BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108L3 marking WHS sot23 transistor marking code whs

    Untitled

    Abstract: No abstract text available
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S SEMH10
    Text: BCR108./SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR108. /SEMH10 BCR108/F/L3 BCR108T/W BCR108S SEMH10 EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S SEMH10

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2=47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see


    Original     		PDF BCR108. BCR108S: BCR108/F/L3 BCR108T/W BCR108S EHA07184 EHA07174 BCR108 BCR108F BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W

    BCR108

    Abstract: BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1
    Text: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR108. BCR108/F/L3 BCR108T/W BCR108S EHA07174 EHA07184 BCR108 BCR108F BCR108L3 BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W bcr1