MARKING CODE CCB
Abstract: BC847S
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
|
Original
|
BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
MARKING CODE CCB
BC847S
|
PDF
|
h11e
Abstract: No abstract text available
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
|
Original
|
BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
h11e
|
PDF
|
BC846U/S
Abstract: BC846U
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
|
Original
|
BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
BC846U/S
|
PDF
|
1DS sot363
Abstract: marking 1DS sot363
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
|
Original
|
BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846U
EHA07178
1DS sot363
marking 1DS sot363
|
PDF
|
marking 1DS sot363
Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see
|
Original
|
BC846S/
BC846U/
BC847S
BC846S
BC847S:
BC846S
BC846U
EHA07178
marking 1DS sot363
1Ds SOT363
BC846U
BC847S
BC847U
SC74
1CS MARKING
5 pin IC marking ms
marking 1cs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BC847S BC847S E2 B2 C1 SC70-6 Mark: 1C pin #1 B1 E1 C2 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier
|
Original
|
BC847S
SC70-6
|
PDF
|
BC847S
Abstract: CBVK741B019 F63TNR FDG6302P SC70-6
Text: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier
|
Original
|
BC847S
SC70-6
BC847S
CBVK741B019
F63TNR
FDG6302P
SC70-6
|
PDF
|
BC847S
Abstract: SC70-6
Text: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier
|
Original
|
BC847S
SC70-6
BC847S
SC70-6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier
|
Original
|
BC847S
SC70-6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
OT-363
BC847S
OT-363
100mA
100MHz
|
PDF
|
BC847S
Abstract: VPS05604
Text: BC847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604
|
Original
|
BC847S
VPS05604
EHA07178
OT363
EHP00381
EHP00367
Jul-02-2001
EHP00365
BC847S
VPS05604
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
OT-363
BC847S
OT-363
100mA
100MHz
|
PDF
|
MARKING 1cs
Abstract: No abstract text available
Text: BC847S NPN Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2
|
Original
|
BC847S
VPS05604
EHA07178
OT363
MARKING 1cs
|
PDF
|
ic7001
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
OT-363
BC847S
OT-363
ic7001
|
PDF
|
|
|
BC847S
Abstract: VPS05604
Text: BC847S NPN Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2
|
Original
|
BC847S
VPS05604
EHA07178
OT363
EHP00381
EHP00367
Nov-29-2001
EHP00365
BC847S
VPS05604
|
PDF
|
BC847S
Abstract: VPS05604
Text: BC847S NPN Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2
|
Original
|
BC847S
VPS05604
EHA07178
OT363
BC847S
VPS05604
|
PDF
|
2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
|
Original
|
24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
|
PDF
|
CXM03
Abstract: Legrand 047 05
Text: UM10560 230 V 7 W flyback converter SSL2101 reference board Rev. 1 — 20 August 2012 User manual Document information Info Content Keywords SSL2101, dimmable, LED driver, flyback converter, GU10 Abstract This document describes the operation of a 230 V 7 W dimmable LED
|
Original
|
UM10560
SSL2101
SSL2101,
SSL2101DB1069
CXM03
Legrand 047 05
|
PDF
|
slm76cf3201p
Abstract: SLM76 pic32 uart example code C16-G26Q GSM communication projects PA1575MZ50I4G sms reading using pic NEO-6Q LEON-G100 RES04
Text: AN1373 Using PIC32 MCUs to Develop GSM/GPRS/GPS Solutions Authors: Adam Folts Microchip Technology Inc., with contributions from u-blox AG Feature Overview The M2M PICtail Plus Daughter Board contains many features, including GSM, GPRS, and GPS. • Global System for Mobile Communication GSM
|
Original
|
AN1373
PIC32
is-3-6578-300
DS01373A-page
slm76cf3201p
SLM76
pic32 uart example code
C16-G26Q
GSM communication projects
PA1575MZ50I4G
sms reading using pic
NEO-6Q
LEON-G100
RES04
|
PDF
|
bq 8050
Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管
|
Original
|
OD-123
OD-123
OD-323
OD-323
OD-523
OD-523
OT-23
OT-23
OT-323
OT-323
bq 8050
HF S4 13003
F6 13003
bL78L05
HF 13003
bq d882
2SC945
KJG BAV99
WG 13003
2SC945 AQ
|
PDF
|
transistor bc 577
Abstract: transistor bc 103
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code
|
OCR Scan
|
Q62702-2372
OT-363
flE35bDS
BC847S
EHP00365
fl235b05
transistor bc 577
transistor bc 103
|
PDF
|
5b1 transistor
Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type
|
OCR Scan
|
Q62702-C2372
OT-363
Mav-12-1998
BC847S
av-12-1998
5b1 transistor
transistor 5b1
transistor bc qe
TRANSISTOR MARKING TE SOT363
Marking 1cs sot
marking 1cs
FR1E
marking code YA Transistor
6c2 transistor
|
PDF
|
transistor bc 499
Abstract: 1CS K2 marking 1cs transistor Bc 580
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code
|
OCR Scan
|
Q62702-C2372
OT-363
BC847S
transistor bc 499
1CS K2
marking 1cs
transistor Bc 580
|
PDF
|
diode S6 78A
Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14
|
OCR Scan
|
O-92tl
O-92d
diode S6 78A
TRANSISTOR PNP BA RT SOT 89
mmic CEA SOT363
32N45
transistor 6bw
TRANSISTOR BC 545
BF1012S
6bw sot-23
up 6103 s8
6bw 12 transistor
|
PDF
|
