NR3470MU
Abstract: NX8560LJ vw 19320
Text: PRELIMINARY DATA SHEET NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB NX8560LJ LASER DIODE IN BUTTERFLY PACKAGE WITH GPO CONNECTOR SERIES FOR 10 Gb/s DWDM APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8560LJ Series are an Electro-Absorption EA Modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diodes. It is capable
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NX8560LJ
NX8560LJ
UL1581
NR3470MU
vw 19320
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10 gb laser diode
Abstract: upc 577 TLD 521 NX8560SJ electroabsorption
Text: PRELIMINARY DATA SHEET NEC's EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS NX8560SJ Series FEATURES DESCRIPTION • INTEGRATED ELECTRO-ABSORPTION MODULATOR NEC's NX8560SJ Series is an Electro-Absorption EA Modulator and wavelength monitor intergraded, 1550 nm Multiple
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NX8560SJ
NX8560SJ
UL1581
10 gb laser diode
upc 577
TLD 521
electroabsorption
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TLD 521
Abstract: IC UPC 354 TLD 721 upc 577 NX8567SA NX8567SAM NX8567SAS 2N 1564 19275
Text: NEC'S EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 240, 360, 600 km DWDM APPLICATIONS NX8567SA Series FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8567SA Series is an Electro-Absorption EA modulator and wavelength monitor integrated, 1 550 nm Multiple
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NX8567SA
NX8567SA
UL1581VW-1
TLD 521
IC UPC 354
TLD 721
upc 577
NX8567SAM
NX8567SAS
2N 1564
19275
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7Pin Connector
Abstract: bc 541 transistor bc 557 datasheet NR3470MU NX8560LJ NX8560LJ-AZ
Text: NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE IN BUTTERFLY PACKAGE WITH GPO CONNECTOR FOR 10 Gb/s DWDM APPLICATIONS NX8560LJ SERIES FEATURES • INTEGRATED ELECTROABSORPTION MODULATOR • UP TO 40 km TRANSMISSION CAPABILITY WITH STANDARD SINGLE MODE FIBER
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NX8560LJ
NX8560LJ
7Pin Connector
bc 541
transistor bc 557 datasheet
NR3470MU
NX8560LJ-AZ
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bc 303 transistor
Abstract: NX8564LE NX8566LE UL1581VW-1
Text: NEC'S EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564/ NX8565/ NX8566LE Series FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8564/8565/8566LE Series are Electro-Absorption
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NX8564/
NX8565/
NX8566LE
NX8564/8565/8566LE
NX8564LE-BC/CC
NX8565LE-BC/CC
UL1581VW-1
bc 303 transistor
NX8564LE
NX8566LE
UL1581VW-1
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6V relay
Abstract: relay 6v relay pin out diagram DATA SHEET IC 4011 veroboard Futaba circuit radio control chloride ups circuit diagram FUTABA SERVO futaba servo motor futaba radio control circuit diagram
Text: Radio Control Electric Switch T his switch is quite simple but has some great features and worth a try. All of the parts are readily available from most electronics stores or if you tinker with electronics a bit you may have them in your junk box as odd spares.
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bc 303 transistor
Abstract: transistor bc 318 NX8564-AZ NX8564LE NX8565-AZ NX8565LE NX8566-AZ NX8566LE 160832
Text: NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564LE NX8565LE NX8566LE SERIES FEATURES • INTEGRATED ELECTROABSORPTION MODULATOR • VERY LOW DISPERSION PENALTY: Over 360 km 6480 ps/nm , NX8564LE-BC/CC
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NX8564LE
NX8565LE
NX8566LE
NX8564LE-BC/CC
NX8565LE-BC/CC
NX8566LE-BC/CC
NX8564/8565/8566LE
bc 303 transistor
transistor bc 318
NX8564-AZ
NX8564LE
NX8565-AZ
NX8565LE
NX8566-AZ
NX8566LE
160832
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bfy 40
Abstract: STM 64 butterfly 7 pin GPO 80 Km upc 577 NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE stm 64 laser diode 19pin NX8566LE
Text: PRELIMINARY DATA SHEET LASER DIODE NX8560SJ Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8560SJ Series is an Electro-Absorption EA modulator and wavelength monitor integrated, 1 550 nm Multiple Quantum Well (MQW)
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NX8560SJ
bfy 40
STM 64 butterfly 7 pin GPO 80 Km
upc 577
NX8560LJ
NX8560MC
NX8560MCS
NX8564LE
stm 64 laser diode 19pin
NX8566LE
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NR3470MU
Abstract: NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE NX8565LE STM-64 10 gb laser diode NX8560MC Series
Text: DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back
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NX8560LJ
NR3470MU
NX8560MC
NX8560MCS
NX8560SJ
NX8564LE
NX8565LE
STM-64
10 gb laser diode
NX8560MC Series
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back
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NX8560LJ
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thermistor 220
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8560LJ Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s DWDM APPLICATIONS DESCRIPTION The NX8560LJ Series is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back
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NX8560LJ
thermistor 220
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NX8567SA
Abstract: NX8560MC Series NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8567SAM NX8567SAS 4 channel mini filter DWDM
Text: PRELIMINARY DATA SHEET LASER DIODE NX8567SA Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 240 km, 360 km, 600 km APPLICATIONS DESCRIPTION The NX8567SA Series is an Electro-Absorption EA modulator and
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NX8567SA
NX8560MC Series
NX8560LJ
NX8560MC
NX8560MCS
NX8560SJ
NX8567SAM
NX8567SAS
4 channel mini filter DWDM
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator
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NX8564/8565/8566LE
NX8564LE-dle
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10 gb laser diode
Abstract: NX8566LE NX8560MC Series bfy 421
Text: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator
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NX8564/8565/8566LE
NX8564LE-BC/CC)
10 gb laser diode
NX8566LE
NX8560MC Series
bfy 421
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BC649
Abstract: BC550 MOTOROLA bc649c BC549 BC550 bc549c BC549B bc550 noise figure VQE-10 BC549 NPN transistor
Text: MOTOROLA SC 1SE D I b3b?2S4 GOÛ5flbb T I XSTRS/R F T-M-Zl BC549, A, B, C BC550, A, B, C M A X IM U M RATINGS Sym bol R a tin g BC BC 549 550 CASE 29-04, STYLE 17 TO-92 TO-226AA U n it C ollector-E m itter Voltage V cE O 30 45 Vdc Colfector-B ase Voltage
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BC549,
BC550,
O-226AA)
BC649
BC550 MOTOROLA
bc649c
BC549
BC550
bc549c
BC549B
bc550 noise figure
VQE-10
BC549 NPN transistor
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BC549B
Abstract: transistor BC 549 TRANSISTOR BC 550 b bc550b
Text: BC549B,C BC550B,C M A X IM U M R A TIN G S R a tin g Sym bol BC 549 BC 550 U n it C o lle c to r-E m itte r V o ltag e VCEO 30 45 Vdc C o lle c to r-B a s e V o ltag e VCBO 30 E m itte r-B a s e V o ltag e VEBO 5 .0 Vdc C o lle c to r C u rre n t - C o n tin u o u s
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BC549B
BC550B
O-226AA)
transistor BC 549
TRANSISTOR BC 550 b
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C549B
Abstract: 549B c550b BC549B
Text: BC549B,C BC550B,C M A X IM U M R A T IN G S R a tin g Sym bol BC 549 BC 550 U n it C o H e c to r-E m itte r V o lta g e VCEO 30 45 Vdc C o lle c to r-B a s e V o lta g e VC BO 30 50 Vdc E m itte r-B a s e V o lta g e vebo 5 0 Vdc C o lle c to r C u rre n t - C o n tin u o u s
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BC549B
BC550B
T0-92
O-226AA)
N0RMAL12E0
C549B
549B
c550b
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bc 147 transistor
Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
Text: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits
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0Q0D014
O-106
O-237
bc 147 transistor
transistor BC 547B
transistor BC 147
Transistor BC 547, CL 100
bc 104 npn transistor
bc 106 transistor
transistor BC 337-25
TO106 transistor
bc 337-25 transistor
transistor BC 147b
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Transistor NPN BC 549B
Abstract: transistor BC 147b bc 337-25 transistor transistor BC 547B Transistor - BC 547, CL 100 CIL TRANSISTOR 149b transistor transistor BC 337-25 TRANSISTOR BC 208 bc 106 transistor
Text: EPOXY TRANSISTORS •• CONTINENTA L DEVICE INDIA 3SE D • 0Q0D014 b COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO • Volts Volts Volts Device min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA mW MA Voits MHz max max typ 'typ
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0Q0D014
O-106
O-237
0000G3D
Transistor NPN BC 549B
transistor BC 147b
bc 337-25 transistor
transistor BC 547B
Transistor - BC 547, CL 100
CIL TRANSISTOR
149b transistor
transistor BC 337-25
TRANSISTOR BC 208
bc 106 transistor
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bc 549 diode
Abstract: No abstract text available
Text: HL1341AC Laser Diode Description H L 1341A C is a 1.3 /um In G aA sP distributedfeedback D FB laser diode with buried h e te ro stru ctu re. It is su itable as a light source in high-bit-rate, long-distance fiberoptic com m u n icatio n s and v ario u s o th e r types o f optical equipm ent.
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HL1341AC
bc 549 diode
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BYD31
Abstract: BYD31D BYD31G BYD31J BYD31K BYD31M
Text: N AUER PHILIPS/DISCRETE b^E D • bhSBTBl DOEbSbS TSb ■ APX Philips Sem iconductors Prelim inary specification Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed SOD91 implosion diode ID glass
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02b5bÃ
BYD31
BYD31D
BYD31G
BYD31J
BYD31K
BYD31M
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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54ABT125
Abstract: 54*125
Text: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers
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54ABT125
48mA/-24mA
500mA
54ABT125
500ns
54*125
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54ABT125
Abstract: No abstract text available
Text: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers
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54ABT125
48mA/-24mA
500mA
54ABT125
DESIGNATOABT125
500ns
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