E2500
Abstract: E2502 E2505 E2505H54 E2505H55 E2505H56 E2505H57 E2505H58 E2505H59 laser chirp parameter
Text: Data Sheet August 2001 E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications Applications • SONET/SDH extended-reach applications ■ High-capacity DWDM system applications ■ High-speed data communications
|
Original
|
E2500-Type
E2500
266-Type
DS01-281OPTO
DS98-368LWP)
E2502
E2505
E2505H54
E2505H55
E2505H56
E2505H57
E2505H58
E2505H59
laser chirp parameter
|
PDF
|
NX8560MC
Abstract: NX8560MC-CC-AZ NX8560MCS NX8560MCS-BC-AZ NX8560MCS-CC-AZ 10 gb laser diode NX8560MC Series
Text: PRELIMINARY DATA SHEET NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB NX8560MC LASER DIODE MODULE WITH DRIVER SERIES FOR 10 Gb/s APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8560MC Series is an Electro-Absorption EA Modulator integrated, 1550 nm Multiple Quantum Well (MQW)
|
Original
|
NX8560MC
NX8560MC
19-PIN
75anty
NX8560MC-CC-AZ
NX8560MCS
NX8560MCS-BC-AZ
NX8560MCS-CC-AZ
10 gb laser diode
NX8560MC Series
|
PDF
|
Electroabsorption modulator
Abstract: No abstract text available
Text: WZ700004B 1/6 MITSUBISHI (OPTICAL DEVICES) FU-632SEA-xx1Mxx 1.55 µm EAM-LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Module type FU-632SEA-x61Mxx/-x31Mxx is an electroabsorption modulator integrated DFB-LD module with single mode optical fiber. This module is suitable for a light source of long haul
|
Original
|
WZ700004B
FU-632SEA-xx1Mxx
FU-632SEA-x61Mxx/-x31Mxx
640km.
Electroabsorption modulator
|
PDF
|
NDL7911P
Abstract: NDL7911PD477 NDL7911PD485 NDL7911PD493 NDL7911PD501 NDL7911PD509 NDL7911PD517 NDL7911PD525 NDL7911PD533
Text: 1550 nm OPTICAL FIBER COMM. EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s D-WDM NDL7911P ULTRALONG-REACH APPLICATIONS 360 km SERIES FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NDL7911P Series is an EA modulator integrated 1550 nm
|
Original
|
NDL7911P
NDL7911P
14-PIN
24-Hour
NDL7911PD477
NDL7911PD485
NDL7911PD493
NDL7911PD501
NDL7911PD509
NDL7911PD517
NDL7911PD525
NDL7911PD533
|
PDF
|
bc 303 transistor
Abstract: transistor bc 318 NX8564-AZ NX8564LE NX8565-AZ NX8565LE NX8566-AZ NX8566LE 160832
Text: NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564LE NX8565LE NX8566LE SERIES FEATURES • INTEGRATED ELECTROABSORPTION MODULATOR • VERY LOW DISPERSION PENALTY: Over 360 km 6480 ps/nm , NX8564LE-BC/CC
|
Original
|
NX8564LE
NX8565LE
NX8566LE
NX8564LE-BC/CC
NX8565LE-BC/CC
NX8566LE-BC/CC
NX8564/8565/8566LE
bc 303 transistor
transistor bc 318
NX8564-AZ
NX8564LE
NX8565-AZ
NX8565LE
NX8566-AZ
NX8566LE
160832
|
PDF
|
electroabsorption
Abstract: ic vrm NDL7912P NDL7912PD477 NDL7912PD485 NDL7912PD493 NDL7912PD501 NDL7912PD509 NDL7912PD517 NDL7912PD525
Text: 1550 nm OPTICAL FIBER COMM. EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s D-WDM NDL7912P ULTRALONG-REACH APPLICATIONS 600 km SERIES FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NDL7912P is an EA modulator integrated 1550 nm DFBLD module for 2.5 Gb/s. The newly developed bandgap energy
|
Original
|
NDL7912P
NDL7912P
14-PIN
24-Hour
electroabsorption
ic vrm
NDL7912PD477
NDL7912PD485
NDL7912PD493
NDL7912PD501
NDL7912PD509
NDL7912PD517
NDL7912PD525
|
PDF
|
NX8564LE311-CC
Abstract: NX8564LE318-CC NX8564LE326-CC NX8564LE334-CC NX8564LE342-CC NX8564LE350-CC NX8564LE358-CC NX8564LE366-CC NX8564LE-CC 160832
Text: EA MODULATOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE NX8564LE-CC FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NX8564LE-CC is an Electro-Absorption EA modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured
|
Original
|
NX8564LE-CC
NX8564LE-CC
14-PIN
UL1581VW-1
24-Hour
NX8564LE311-CC
NX8564LE318-CC
NX8564LE326-CC
NX8564LE334-CC
NX8564LE342-CC
NX8564LE350-CC
NX8564LE358-CC
NX8564LE366-CC
160832
|
PDF
|
AP03-049
Abstract: electroabsorption Electroabsorption modulator 10 gb laser diode E2551 E2551H57 E2551H58 E2551H59 E2581 IEC60825-1
Text: Data Sheet October 2003 E2551 10 Gb/s EML Modules for up to 80 km Transmission Description 10 G b/ s Tr iQ ui E2 LEC nt OP TO E La 551 TRO NI se CS rM od ul e Features • Integrated electroabsorption modulator ■ 1.5 µm wavelength, full C-band ■ Characterized for 10 Gb/s operation
|
Original
|
E2551
E2581
DS03-048,
AP03-049
electroabsorption
Electroabsorption modulator
10 gb laser diode
E2551H57
E2551H58
E2551H59
E2581
IEC60825-1
|
PDF
|
Agere E2505
Abstract: E2500 E2502 E2505 E2505H54 E2505H55 E2505H56 E2505H57 E2505H58 E2505H59
Text: Data Sheet, Rev. 1 September 2001 E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications Applications • SONET/SDH extended-reach applications ■ High-capacity DWDM system applications ■ High-speed data communications
|
Original
|
E2500-Type
E2500
266-Type
modulation712-4106)
DS01-281OPTO-1
DS01-281OPTO)
Agere E2505
E2502
E2505
E2505H54
E2505H55
E2505H56
E2505H57
E2505H58
E2505H59
|
PDF
|
HL1569AF
Abstract: ld501 Hitachi DSA0047
Text: HL1569AF 1.55 µm Laser Diode with EA Modulator ADE-208-834A Z 2nd Edition Dec. 2000 Description The HL1569AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
|
Original
|
HL1569AF
ADE-208-834A
HL1569AF
ld501
Hitachi DSA0047
|
PDF
|
Centellax
Abstract: electroabsorption modulator Integrated Modulator and Driver Module ST-M25 GPPO 36PS
Text: CENTELLAX OA4SMM2 Datasheet 43Gb/s Broadband 3.3V Electroabsorption Modulator Driver Amplifier Product Highlights • 3.3Vp-p output swing • 0.5ps added RMS jitter Pr • 6ps rise / fall time • 21dB gain to 45GHz • 16dBm saturated output power • 900mW power dissipation
|
Original
|
43Gb/s
45GHz
900mW
16dBm
45GHz.
OPT002)
smd-00026
Centellax
electroabsorption modulator
Integrated Modulator and Driver Module
ST-M25
GPPO
36PS
|
PDF
|
NX8560MC Series
Abstract: 10 gb laser diode NX8560MC NX8560MC-CC NX8560MCS NX8560MCS-BC NX8560MCS-CC
Text: PRELIMINARY DATA SHEET NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB NX8560MC LASER DIODE MODULE WITH DRIVER SERIES FOR 10 Gb/s APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8560MC Series is an Electro-Absorption EA Modulator integrated, 1550 nm Multiple Quantum Well (MQW)
|
Original
|
NX8560MC
NX8560MC
19-PIN
75RMATION
NX8560MC-CC
NX8560MCS-CC
NX8560MCS-BC
NX8560MC Series
10 gb laser diode
NX8560MC-CC
NX8560MCS
NX8560MCS-BC
NX8560MCS-CC
|
PDF
|
bc 303 transistor
Abstract: NX8564LE NX8566LE UL1581VW-1
Text: NEC'S EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564/ NX8565/ NX8566LE Series FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8564/8565/8566LE Series are Electro-Absorption
|
Original
|
NX8564/
NX8565/
NX8566LE
NX8564/8565/8566LE
NX8564LE-BC/CC
NX8565LE-BC/CC
UL1581VW-1
bc 303 transistor
NX8564LE
NX8566LE
UL1581VW-1
|
PDF
|
vs-s1558
Abstract: vss 1558 VSC7989-W FLD5F10NP PRBS23 VSC7989CD
Text: VSC7989 Data Sheet SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver FEATURES APPLICATIONS ● Rise and Fall Times Less Than 35ps ● SONET/SDH at 2.488Gb/s, 9.952Gb/s, 10.7Gb/s ● High-Speed Operation Up to 10.7Gb/s NRZ Data ● OC-192 Transponder Modules
|
Original
|
VSC7989
488Gb/s,
952Gb/s,
OC-192
VSC7989
G52356,
vs-s1558
vss 1558
VSC7989-W
FLD5F10NP
PRBS23
VSC7989CD
|
PDF
|
|
|
electroabsorption modulator
Abstract: electroabsorption modulator laser diode electroabsorption 741 metal package Electro-absorption modulator
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7989 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 35ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs
|
Original
|
VSC7989
VSC7989
G52356,
electroabsorption modulator
electroabsorption modulator laser diode
electroabsorption
741 metal package
Electro-absorption modulator
|
PDF
|
electroabsorption 2.5 Gbps
Abstract: nrz optical modulator HL1553
Text: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5
|
Original
|
HL1553
HL1553
electroabsorption 2.5 Gbps
nrz optical modulator
|
PDF
|
CyOptics DFB
Abstract: LIM400 CyOptics DFB chip CYOPTICS laser cyoptics electroabsorption modulator laser diode cyoptics B007-M43-01-030 JESD625-A DFB ea 10GHZ apogee photonics
Text: Datasheet LIM400 40Gb/s Transmitter Product Overview Features • • • • • • • • • Enables ITU and MSA Compliance Single Fiber Package 40Gb Electroabsorption Modulator EAM with Integrated Laser Integrated bias eliminates need for external bias-tee
|
Original
|
LIM400
40Gb/s
40ps/nm
GR-468-CORE
DS07-107i
LIM400
CyOptics DFB
CyOptics DFB chip
CYOPTICS laser
cyoptics electroabsorption modulator laser diode
cyoptics
B007-M43-01-030
JESD625-A
DFB ea 10GHZ
apogee photonics
|
PDF
|
ea-modulator
Abstract: nrz optical modulator
Text: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5 Gbps
|
Original
|
HL1553
HL1553
HL1553:
48832Gbps
100ps
ea-modulator
nrz optical modulator
|
PDF
|
NX8565LE541-CC
Abstract: NX8565LE311-CC NX8565LE318-CC NX8565LE326-CC NX8565LE334-CC NX8565LE342-CC NX8565LE350-CC NX8565LE358-CC NX8565LE366-CC NX8565LE-CC
Text: EA MODULATOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE NX8565LE-CC FOR 2.5 Gb/s DWDM ULTRALONG-REACH 600 km APPLICATIONS FEATURES DESCRIPTION • INTEGRATED ELECTROABSORPTION MODULATOR The NX8565LE-CC is an Electro-Absorption EA modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured
|
Original
|
NX8565LE-CC
NX8565LE-CC
14-PIN
UL1581
24-Hour
NX8565LE541-CC
NX8565LE311-CC
NX8565LE318-CC
NX8565LE326-CC
NX8565LE334-CC
NX8565LE342-CC
NX8565LE350-CC
NX8565LE358-CC
NX8565LE366-CC
|
PDF
|
laser chirp parameter
Abstract: cyoptics CYOPTICS laser LIM400 AC Photonics, modulator JESD625-A laser transmitter 10ghz GR-468-CORE DFB laser drivers GPPO
Text: Datasheet LIM400 40Gb/s Transmitter Product Overview Features • • • • • • • • • Enables ITU and MSA Compliance Single Fiber Package 40Gb Electroabsorption Modulator EAM with Integrated Laser Integrated bias eliminates need for external bias-tee
|
Original
|
LIM400
40Gb/s
40ps/nm
GR-468-CORE
DS07-107i
LIM400
laser chirp parameter
cyoptics
CYOPTICS laser
AC Photonics, modulator
JESD625-A
laser transmitter 10ghz
GR-468-CORE
DFB laser drivers
GPPO
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
|
OCR Scan
|
HL1566AF
HL1566AF
HL1566AFndicular)
|
PDF
|
BD 266 S
Abstract: 266l lucent microelectronics pump laser lucent microelectronics pump laser 980 Lucent M-266L31
Text: Advance Data Sheet October 1996 microelectronics group Lucent Technologies Bell Labs Innovations 266-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultra Long-Reach Applications (>600 km) Applications • SONET/SDH extended-reach applications
|
OCR Scan
|
266-Type
14-pin
DS96-382LWP
DS96-087LWP
PS95-002LWP-6)
BD 266 S
266l
lucent microelectronics pump laser
lucent microelectronics pump laser 980
Lucent M-266L31
|
PDF
|
E2502
Abstract: LUCENT E2500 series Lucent E2502H21 lucent E2500 E2502H50
Text: Data Sheet September 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations E2500-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultralong-Reach Applications (>600 km) The E2500 EM-ILM, the newest generation of the award-winning 266-Type EM-ILM, features an integrated modulator
|
OCR Scan
|
E2500-Type
E2500
266-Type
DS98-368LW
DS97-319LW
E2502
LUCENT E2500 series
Lucent E2502H21
lucent E2500
E2502H50
|
PDF
|
edfa rise time specifications
Abstract: 1720 EDFA 266L32 lucent microelectronics pump laser
Text: Advance Data Sheet August 1996 microelectronics group Lucent Technologies Bell Labs Innovations 266-Type 2.5 Gbits/s Electroabsorption Modulated Isolated Laser Module EM-ILM for Ultra Long-Reach Applications (>600 km) Applications • SONET/SDH extended-reach applications
|
OCR Scan
|
266-Type
14-pin,
DS96-087LWP
PS95-002LWP-6)
edfa rise time specifications
1720 EDFA
266L32
lucent microelectronics pump laser
|
PDF
|