BC 390 TRANSISTOR Search Results

BC 390 TRANSISTOR Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

BC 390 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
hFE-1000 BC Abstract: C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin Text: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 875 BC 877 BC 879	Original	PDF	C62702-C853 C62702-C854 C62702-C855 hFE-1000 BC C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin
SMD TRANSISTOR MARKING 2A Abstract: smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc Text: Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage	Original	PDF	2SB1188 100ms 30MHz SMD TRANSISTOR MARKING 2A smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc
transistor BC 245 Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136 Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the	Original	PDF
2sb1240 Abstract: 2sb118 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100 Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05	Original	PDF	2SB1188 2SB1182 2SB1240 2SB1182 SC-62 SC-63 2sb1240 2sb118 2SD1758 2SD1766 2SD1862 T100
Untitled Abstract: No abstract text available Text: Bill of Materials for the NCP1255PRNGEVB Evaluation Board Substitution Allowed Lead Free Designator Quantity Description Value Tolerance Footprint Manufacturer Manufacturer Part Number R1 R2a, R2b R3 R4b 1 2 1 2.2 k 1.5 ohm 0,5 W 1k - 1% 1% 1% - SMD0805 SMD2510	Original	PDF	NCP1255PRNGEVB SMD0805 SMD2510 P6KE220A
2SD2212 REEL Abstract: 2SD1898 marking 2sd1664 2SD1834 Text: 2 W S O T- 8 9 B I P O L A R T R A N S I S T O R S • • • SQP £ each 0.1 0.5 0.1 0.5 0.1 0.5 0.5 0.1 0.20 POA 0.10 0.14 0.12 0.13 0.16 0.18 POA 0.5 0.1 0.5 0.5 0.5 0.13 0.13 0.15 0.18 POA 0.5 0.5 0.16 POA 0.01 POA 0.5 1.0 1.0 1.0 0.13 0.18 POA 0.17 SC-62 SOT-89 DIMENSIONS	Original	PDF	SC-62 OT-89) 2SC4132 2SC5053 2SD1664 2SD1766 2SD1767 2SD1898 2SD2167 2SD2211 2SD2212 REEL marking 2sd1664 2SD1834
bc 107 transistor Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16 Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP	OCR Scan	PDF	BSX52 BSW21 BSW22 BSX51 BSW22 BSX52 bc 107 transistor transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
Untitled Abstract: No abstract text available Text: 5SC » • ÛH3SbOS QÜ0MSS4 T ■ S I E 6 r NPN Silicon AF Transistors - 25C BCX 22 BCX 24 0 4 7 *5 ^ SIEMENS AKTIEN6ESELLSCHAF BCX 22, BCX 24, and BCX 94 are epitaxial NPN silicon planar transistors in TO 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case. These transistors	OCR Scan	PDF	-------------------25C Q62702-C732 Q62702-C750 Q62702-C856 23SbQS C--03
transistors BC 458 Abstract: BC 458 transistors BC 458 pnp transistor BC 458 BC 459 transistors BC 459 bf 478 BC479 TO-18 BC-177 pnp transistor 2N5415 Text: rZ J SGS-THOMSON ¡M »iü i g¥[M «(gS GENERAL PURPOSE & INDUSTRIAL ^7# SMALL SIGNAL TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS - TO 18 v CEO hFE mln/max ic fi% Type (mA) (V) 7> v CE(sat) max lcflB (mA) (V) «T min NF (MHz) (dB) (mW)	OCR Scan	PDF	BFX37 BCY79 BCY78 BFX91 transistors BC 458 BC 458 transistors BC 458 pnp transistor BC 458 BC 459 transistors BC 459 bf 478 BC479 TO-18 BC-177 pnp transistor 2N5415
AAES Abstract: V3061 Text: tì I . 2SC D • û23Sfc.0S GD0425Ô 7 H S I E â Z5C U*t258 PNP Silicon AF Transistors - BCX23 BCX 3 9 SIEMENS AKTIENGESELLSCHAF - — — =- -— BCX 2 3 and BCX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case	OCR Scan	PDF	23Sfc GD0425Ô BCX23 54tH3 BCX23 BCX39 fl23SbOS 00042bl AAES V3061
bc 170 Abstract: BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107 Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors l c = 100mA for general amplifying and switching purposes Common maximum ratings - lc -V e B O 100 mA5 5 V5 Common characteristics (Tamb — 25 C) 300 mW (TO -92)3 300 mW (TO -18)4 Ti P lo t	OCR Scan	PDF	100mA) BC108B BC108C. bc 170 BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107
SSY20 Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3	OCR Scan	PDF
c732 Abstract: 000M2S4 BCX22 BCX24 BCX94 Q62702-C732 Q62702-C750 Text: 2SC » • ÛH3SbOS 0004554 T ■ S I E 6 r NPN Silicon AF Transistors - -r-an-ri BCX 22 BCX 24 25C 0 4 7 5 4 0 - B C X 94 SIEMENS AKTIEN6ESELLSCHAF BCX 22, BCX 24, and BCX 94 are epitaxial NPN silicon planar transistors in TO 18 metal	OCR Scan	PDF	000M2S4 BCX24 --25C 0-BCX94 Q62702-C732 Q62702-C750 62702-C856 c732 BCX22 BCX24 BCX94 Q62702-C732 Q62702-C750
Y59 r 120 Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE fe.'lE D bb53^31 DQS7bE3 245 BCY58 BCY59 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case, for use in ampli fier and switching applications. QUICK REFERENCE DATA	OCR Scan	PDF	BCY58 BCY59 BCY58 BCY58â BCY59â DQ27b2fi BCY58) BCY59) Y59 r 120

TP2222 Abstract: TP2222A TP2907A TP3116 MPS6566 TP2483 MPS6515 MPS6516 MPS6517 MPS6518 Text: ^ Econ olin e R P la stic -M o ld e d If H U U C Silicon S E P T R Transistors GENERAL-PURPOSE SMALL-!IIGNAL AMPLIFIERS >oc < o o. _i Type No. Pd D -C C U R R E N T G A IN h fE Lim ts T a = V (BR) V(BR) V(BR) I c b o C onditions VcE(SAT) 25 C C BO CEO E BO	OCR Scan	PDF	MPS6515 MPS6516 MPS6517 MPS6518 MPS6519 MPS6520 TP2483 TP2484 TP4384 TP4386 TP2222 TP2222A TP2907A TP3116 MPS6566
BCY59C Abstract: bcy59 ty 90-BC Text: BCY58 BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -18 m etal package w ith the co lle c to r connected to the case, fo r use in a m p li fie r and sw itching applications. Q U IC K R E F E R E N C E D A T A BCY58 BC Y 59 v CEO max.	OCR Scan	PDF	BCY58 BCY59 BCY59C bcy59 ty 90-BC
Untitled Abstract: No abstract text available Text: N ~7 > y 7 $ /Transistors 2SD1225M/2SD1858 '> 7 ^ 7 ° U - : J - B N P N y 'J=]> h 7 > y ^ ^ 2SD1225M 4i f,Bc 02^ 7* iillliffl/M e d iu m Power Amp. 2SD1858 Epitaxial Planar N PN Silicon Transistors SO- >4 VT.\' vjl - 7- • y \|- fj\r > S 0 /D \|m n s\|or>s U n it: mm)	OCR Scan	PDF	2SD1225M/2SD1858 2SD1225M 2SD1858 2SD1858 2SD1225M 500mA) 150mV 2SB909M, 2SB1237.
KT 819 transistor Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18 Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e	OCR Scan	PDF
bf679t Abstract: transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor Text: c TELEFUNKEN ELECTRONIC fllC D a^SDD^b 00G542E 7 • A L 6 Û S 679 T • BF 679 T TtllLtltFOJMIXilMl electronic Creative Technologies _ t - 3 / - / r Silicon PNP RF Transistor Applications: Gain controlled UHF/VHF input stages	OCR Scan	PDF	00G542E 569-GS bf679t transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor
BCY59 Abstract: bcv59 BCY58 BCY58X BCY58IX BCY59IX 71519 BCY59-10 BCY58VII BCY58VIII Text: N AUER PHILIPS/DISCRETE b*lE » • bbSB'iBl □ 0E7fc>E3 E45 HiAPX II BCY58 BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case, fo r use in ampli fie r and switching applications.	OCR Scan	PDF	bbS3T31 27bE3 BCY58 BCY59 BCY58 BCY58-BCY59- freque027b31 BCY59 bcv59 BCY58X BCY58IX BCY59IX 71519 BCY59-10 BCY58VII BCY58VIII
2sd2006 Abstract: TRANSISTOR "BC 371" TRANSISTOR BC 373 transistor 2SD2006 2SB1330 transistor BC SERIES Q 371 Transistor Text: 2SD2006 Transistor, NPN Features Dimensions Units : mm • available in MRT package • high breakdown voltage: BVq ^ q = 80 V 2SD2006 (MRT) 6 5±0 2 • large current capacity, lc = 700 mA • complementary pair with 2SB1330 1.0 Applications • R medium power amplifier	OCR Scan	PDF	2SD2006 2SB1330 2SD2006 TRANSISTOR "BC 371" TRANSISTOR BC 373 transistor 2SD2006 transistor BC SERIES Q 371 Transistor
Untitled Abstract: No abstract text available Text: 2 S B 1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1188; BC-, where ★ is hFE code • • • 2SB1188 (MPT3) c -0.1 0'2 4.5 1. 6 collector power dissipation, Pc = 2 W,	OCR Scan	PDF	OT-89, SC-62) 2SB1188; 2SB1188 2SD1766
2N4401 EBC Abstract: marking 1F SMT3 marking r2k MARKING G1.G IC marking R2k MMST8598 marking G3K Text: Transistors USA / European specification models types [Surface mounting type] • U M T 3 /N P N type General purpose small signal amplifiers Product name BC84Ô8W BVcbo BVceo BViao Min. Min. Min. V (V) (V) 5 30 30 • U M T 3 / PNP ic Max. CmA) iCBO Max.	OCR Scan	PDF	BC858BW MPSA63 MPSA64 2N4401 EBC marking 1F SMT3 marking r2k MARKING G1.G IC marking R2k MMST8598 marking G3K
d1189f Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277 Text: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)	OCR Scan	PDF	2SB1188 2SB1182 2SB1188) 2SB1182) 2SB891) 2SB1188/2SB1182/2SB1240/2SB891F/ 2SB822/2SB1277/2SB911M 2SB891 d1189f 2SB891 d1758 2SB891F 2sb1188 2sb1277

BC 390 TRANSISTOR Search Results

BC 390 TRANSISTOR Result Highlights (6)

BC 390 TRANSISTOR Datasheets Context Search

hFE-1000 BC

SMD TRANSISTOR MARKING 2A

transistor BC 245

2sb1240

Untitled

2SD2212 REEL

bc 107 transistor

Untitled

transistors BC 458

AAES

bc 170

SSY20

c732

Y59 r 120

TP2222

BCY59C

Untitled

KT 819 transistor

bf679t

BCY59

2sd2006

Untitled

2N4401 EBC

d1189f