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    BC 147 TRANSISTOR Search Results

    BC 147 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 147 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    PDF lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    bc 147 transistor

    Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
    Text: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits


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    PDF 0Q0D014 O-106 O-237 bc 147 transistor transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b

    Transistor NPN BC 549B

    Abstract: transistor BC 147b bc 337-25 transistor transistor BC 547B Transistor - BC 547, CL 100 CIL TRANSISTOR 149b transistor transistor BC 337-25 TRANSISTOR BC 208 bc 106 transistor
    Text: EPOXY TRANSISTORS •• CONTINENTA L DEVICE INDIA 3SE D • 0Q0D014 b COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO • Volts Volts Volts Device min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA mW MA Voits MHz max max typ 'typ


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    PDF 0Q0D014 O-106 O-237 0000G3D Transistor NPN BC 549B transistor BC 147b bc 337-25 transistor transistor BC 547B Transistor - BC 547, CL 100 CIL TRANSISTOR 149b transistor transistor BC 337-25 TRANSISTOR BC 208 bc 106 transistor

    BC 148 transistor

    Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
    Text: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


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    PDF 023SbOS BC1211) BC-121 Q60203-Q60203-Q60203-Q60203-Q60203-Q60203 Q60203-Q60203 Q60203 bc121. bc122, bc123 BC 148 transistor transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor

    TIC 122 Transistor

    Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
    Text: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


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    PDF 023SbO BC-121 blu122, BC123 0235bOS QQQ41Q3 BC121. BC122, TIC 122 Transistor bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157

    BC560 equivalent

    Abstract: bc556 equivalent bc 147 equivalent bc560 BC557 equivalent bc557 b 011 bc560 noise figure bc546 equivalent bc 147 transistor BG558
    Text: BC556. . . BC560 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into three groups A, B and C according to their current gain. The types BC556 and BC557 are available in groups A and B, however, the types BG558,


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    PDF BC556 BC560 BC556 BC557 BG558, BC559 BC560 BC546 BC560 equivalent bc556 equivalent bc 147 equivalent BC557 equivalent bc557 b 011 bc560 noise figure bc546 equivalent bc 147 transistor BG558

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    LT 5216

    Abstract: Siemens 221 LT 5316 LT 5210 702 sot 223 C2109 R/diode lt 5216
    Text: PNP Silicon AF Transistors • • • • BCP 51. BCP 53 For AF driver and output stages High collecto r current Low collecto r -em itter saturation voltage C om plem entary types: BCP 5 4 .BCP 56 NPN 'C B T yp e M a rk in g BCP 51 O rd e rin g c o d e (1 2 -m m ta p e )


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    PDF C2107 C2109 Q62702 C2146 OT-223 LT 5216 Siemens 221 LT 5316 LT 5210 702 sot 223 R/diode lt 5216

    bc 148 npn transistor

    Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637
    Text: BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 BC637 BC639 100 Collector-base voltage open em itter v CBO max. 45 60 Collector-emitter voltage (open base)


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    PDF BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637 BC639 bc 148 npn transistor NPN transistor bc 148 BC 148 transistor

    BC 148 TRANSISTOR

    Abstract: transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung
    Text: SE RV IC E-M ITTEILUN GEN television | VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN f a li | r a d i o - AUGUST 1981 8 SEITE 1-4 Beobachtungssohwerpunkte hinsichtlich der Brandgefahren bei den SU - Farbfernsehgeräten RADUGA 5BG, -706, -726 und -730 Eine Analyse der Brandursachen an o.g. Cerätetypen außer RADUGA


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    PDF 61-cm-Ger BC 148 TRANSISTOR transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung

    2sc3044a

    Abstract: 2SC3044
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SC3044, 2SC3044A Silicon High Speed Power Transistor DESCRIPTION The 2 S C 3 0 4 4 /2 S C 3 0 4 4 A s w itc h in g tra n s is to rs a re s ilic o n fa b r ic a t e d w it h NPN p la n a r g e n e ra l p u rp o s e , h ig h


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    PDF 2SC3044, 2SC3044A 2sc3044a 2SC3044

    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


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    transistor c375

    Abstract: WJ-CA28 WJ-A28 transistor BC 176 transistor bc 248 WJA28
    Text: u jU A28/SMA28 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +29 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 T O +15 VOLTS Outline Drawings A28 Specifications’* ~ » 0 1 8 ÌS » 4 6 » ° .0 2 > D IA .


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    PDF A28/SMA28 1-800-WJ1 transistor c375 WJ-CA28 WJ-A28 transistor BC 176 transistor bc 248 WJA28

    WJ-A59

    Abstract: bc 147 transistor transistor bc 132 transistor BC 157 wja5 TRANSISTOR BC 394
    Text: uuJ A59 / SMA59 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH DYNAMIC RANGE: +118 dBm 1 MHz BAND ♦ HIGH OUTPUT POWER: +22 dBm (TYP.) ♦ HIGH THIRD ORDER I.P.: +36 dBm (TYP.) ♦ LOW NOISE FIGURE: 4.3 dB (TYP.) ♦ WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS


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    PDF SMA59 1-800-WJ1-4401 WJ-A59 bc 147 transistor transistor bc 132 transistor BC 157 wja5 TRANSISTOR BC 394

    marking code SE transistors

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC 17E » • fl'ÌEDQRb DQÌHS27 è BUT 56 • BUT 56 A mJMFWKIM electronic Crttttv«Ifcfwioiog* T*- 3 3 -Ì2 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times


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    PDF IAL66 DIN41 15A3DIN marking code SE transistors

    ceramic capacitor 39 pf

    Abstract: AEA213 MEA208 IEC134
    Text: Philips Sem iconduct o r s P H IL IP S 7 1 1 0 fl5 b IN T E R N A T IO N A L □ □ b 5 b ^ ^ ^ ^ T ^ ^ ^ ^ n N ^ ^ r o d u c t^ s p e c ific a tiO T bSE D UHF power transistor FEATURES Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures


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    PDF 7110flgb BLU10/12 OT122 -SOT122A MEA208 ceramic capacitor 39 pf AEA213 MEA208 IEC134

    BL-5j

    Abstract: No abstract text available
    Text: Transistors Interface and switching 30V, 200mA 2SK2731 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •E x te rn a l dimensions (Units: mm) 2.9±0.2


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    PDF 200mA) 2SK2731 SC-59 BL-5j

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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    transistor Bc 542

    Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
    Text: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times


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    PDF 33-r2 a75ttti DIN41 T0126 15A3DIN transistor Bc 542 transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A

    Untitled

    Abstract: No abstract text available
    Text: /ITSCS-THOMSON TL072 TL072A-TL072B Ä T# LOW NOISE J-FET INPUT DUAL OP-AMPs • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ LOW NOISE Vn = 18 nV hi Hz typ . OUTPUT SHORT-CIRCUIT PROTECTION


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    PDF TL072 TL072A-TL072B LCC20 TL072, TL072A TL072B Gain-of-10 E88TL072-18 TL072-TL072A-TL072B

    tl0721

    Abstract: ci tl072 TL072 PIN DIAGRAM transistor BC 147 bc 147 transistor TL072M TL072C TL072-TL072A-TL072B tl072 equivalent TL072A
    Text: TL072 TL072A-TL072B SGS-THOMSON ¿ 5 7 ^ D g ^ @ [l[L [i(g lT ^ R !]D O i LOW NOISE J-FET INPUT DUAL OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT LOW NOISE Vn = 1 8 nV N Hz (typ OUTPUT SHORT-CIRCUIT PROTECTION


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    PDF TL072 TL072A-TL072B LCC20 TL072, TL072A TL072B TL072-TL072A-TL072B tl0721 ci tl072 TL072 PIN DIAGRAM transistor BC 147 bc 147 transistor TL072M TL072C TL072-TL072A-TL072B tl072 equivalent