Untitled
Abstract: No abstract text available
Text: bbS3R31 D02b4SA ADS LRE D N AMER PHILIPS/DISCRETE IAPX B Y 228 Jl PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television
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bbS3R31
D02b4SA
OD-64.
D02b4fe
BY228
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Untitled
Abstract: No abstract text available
Text: b'lE D N AUER P H I L IPS/DISCRETE bbS3R31 0027101 Philips Semiconductors 07T B IAPX Preliminary specification High speed diode FEATURES 1PS193 QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS
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bbS3R31
1PS193
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Untitled
Abstract: No abstract text available
Text: bbS3R31 Q02HS5U N AMER PHILIPS/DISCRETE «APX b7E D BCV64 BCV64B A SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications. N-P-N complement is the BC V63. Q U IC K R E F E R E N C E D A T A
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bbS3R31
Q02HS5U
BCV64
BCV64B
T-143
Q02USSb
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;
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bbS3R31
bbS3R31
Q02RltlR
7Z88750
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 0Q2flfl2M ^30 I IAPX bLUcJO/12 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile
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bbS3R31
bLUcJO/12
BLU30/12
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equivalent transistor c 5888
Abstract: No abstract text available
Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency
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bbS3R31
BFS520
OT323
OT323
OT323.
equivalent transistor c 5888
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Untitled
Abstract: No abstract text available
Text: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
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bbS3R31
0D30727
OT223
BUK482-60A
QD3D731
bb53T31
D03D732
OT223.
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3R31 0D321b2 fl25 • APX Preliminary specification 2 GHz RF power transistor BLT11 — N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation
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bbS3R31
0D321b2
BLT11
OT103
BLT11
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Untitled
Abstract: No abstract text available
Text: N AHER PHILIPS/DISCRETE bbS3R31 DD32S7H 17fl *A P X b'lE D Philips Semiconductors Preliminary specification W ideband amplifier module OM2082/86 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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bbS3R31
DD32S7H
OM2082/86
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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bbS3R31
BUK445-400B
bbS3T31
bbS3131
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NT 407 F TRANSISTOR
Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
Text: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.
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BFG198
OT223
MS8002
OT223.
NT 407 F TRANSISTOR
Philips CD 303
2222 595
npn 2222 transistor
BFG198
MS8002
0450 7N
2222 443
TRANSISTOR D 471
MRA transistor
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BC640
Abstract: BC638 BC636 bc639 bc638-10 BC635 BC636-10 BC637 bc636 npn transistor Silicon Epitaxial Planar Transistor philips
Text: N AUER PHILIPS/DISCRETE bTE T> • bbS3R31 □OSTS'ib 4=17 ■ APX BÜ636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.
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bbS3R31
BC636;
BC638;
BC640
BC635,
BC637
BC639.
BC636
BC638
BC640
bc639
bc638-10
BC635
BC636-10
bc636 npn transistor
Silicon Epitaxial Planar Transistor philips
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philips om360
Abstract: OM360 HYBRID V.H.F./U.H.F. WIDE-BAND AMPLIFIER V360
Text: • bbS3R31 0G3243Û 25b IAPX i N AMER PHILIPS/DISCRETE 0|V360 bSE J> v_ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band am plifier in hybrid integrated circu it technique on a th in -film substrate, ir'te r>decl fo r use in mast-head booster-amplifiers, as pream plifier in M ATV systems, and as general-purpose am pli
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0G3243Ã
OM36Q
bb53131
003E4i
7Z82896
philips om360
OM360
HYBRID V.H.F./U.H.F. WIDE-BAND AMPLIFIER
V360
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BUK437-500B
Abstract: J812 DD304 HIA TRANSISTOR
Text: N Afl ER PHILIPS/DISCRETE bTE T> m bbS3R31 □Q3DM6S Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3R31
BUK437-500B
btS3T31
BUK437-500B
J812
DD304
HIA TRANSISTOR
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2n4033
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE bbS3R31 QOSfilHb 1SS « A P X 2N4030 to 2N4033 » X SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes primarily intended for large signal, low-noise, low-power audio frequency applications for industrial service.
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bbS3R31
2N4030
2N4033
2N4031
2N4032
2N4030
2N4032
2n4033
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hx- je
Abstract: No abstract text available
Text: I bbS3R31 DOBEbMO 77b H A P X KMZ10C N AMER PHILIPS/DISCRETE b^E T> MAGNETIC FIELD SENSOR The KMZ10C is a magnetic field sensor employing the magneto-resistive effect o f th in film permalloy. Its properties enable this sensor to be used in a wide range o f applications fo r current and field
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bbS3R31
KMZ10C
KMZ10C
ZSdQ14
hx- je
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E bRE bbS3R31 Q0E7DfiR 742 * A P X D Philips Semiconductors Preliminary specification High speed double diode FEATURES 1PS181 QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application.
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bbS3R31
1PS181
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Untitled
Abstract: No abstract text available
Text: bbS3R31 DD3SE1S 166 M A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor X3A-BFR90A crystal N APER PHILIPS/DISCRETE bRE D — MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFR90A SOT37 , BFQ53 (TO-72) and BFR92A (SOT23). Crystals are supplied as whole
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bbS3R31
X3A-BFR90A
BFR90A
BFQ53
BFR92A
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Untitled
Abstract: No abstract text available
Text: m bbS3R31 DD27RB1 bTT « A P X JC556 to 558 N AUER PHILIPS/DISCRETE b'lE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose pnp transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA
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bbS3R31
DD27RB1
JC556
JC556
JC557
JC558
JC556A
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Untitled
Abstract: No abstract text available
Text: bbS3R31 Philips Semiconductors DD32351 B OR M l APX Product specification CATV amplifier module — — BGY65 — N AflER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
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bbS3R31
DD32351
BGY65
-SOT115C
DIN45004B;
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BUV28A
Abstract: BUV28
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 DD2Û47D 117 I IAPX '' BUV28 BUV28A SILICON DIFFUSED POWER TRANSISTORS High-speed, glass-passivated npn transistors in a T 0 -2 2 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor controls.
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bbS3R31
BUV28
BUV28A
T0-220
O-220AB.
BUV28
QD26473
BUV28A
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 □026470 IT? « A P X BUV28 BUV28A _ / V _ SILICON DIFFUSED POWER TRANSISTORS High-speed, glass-passivated npn transistors in a TO-220 envelope intended for fast switching applications
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bbS3R31
BUV28
BUV28A
O-220
bb53T31
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
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bbS3R31
002fl37b
BU2520D
bbS3T31
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3R31 0031704 72T M A P X NPN 1 GHz video transistors £ Product specification BFQ232; BFQ232A N AflER PHILIPS/DISCRETE DESCRIPTION b'JE D PINNING NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a
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bbS3R31
BFQ232;
BFQ232A
O-126)
BFQ252
D03170fl
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