Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE ]> • APX bbS3ci31 DD2bS3Q bD7 bYHD JL BY716 SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-speed high-voltage applications. The devices feature non-snap-off characteristics. Because of the small envelope, the diodes
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BY716
BY715
002b532
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE fc.TE D bbS3ci31 QQSbMST TDM « A P X _ Product specification P h ilip s S e m icon du ctors_ BB901 Variable capacitance diode DESCRIPTION The BB901 is a silicon planar variable capacitance diode in a
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BB901
BB901
002b431
MRA565
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BFR90A
Abstract: BFR92A BFT92 A18 transistor
Text: N AMER PHILIPS/DISCRETE 2 5E D • ^53^31 001fl0b3 4 WÊ BFR92A T X 3 M ? N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistor features: • low noise;
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bbS3T31
001fl0b3
BFR92A
OT-23
BFT92
150mV;
BFR90A
BFR92A
BFT92
A18 transistor
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lc 945 p transistor NPN TO 92
Abstract: BLX96 blx96a IEC134 lc 945 p transistor s3 vision
Text: N AUER PHILIPS/DISCRETE ObE D 86 D 0 1 8 5 2 MAINTENANCE TYPE D ~ • T ^53*131 GOIHCHO T ~ ÔY [I "" BLX96 JL U.H.F. LINEAR POW ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.
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0G14D10
BLX96
lc 945 p transistor NPN TO 92
BLX96
blx96a
IEC134
lc 945 p transistor
s3 vision
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epsilam
Abstract: PZ1721B12U PZ1418B15U PZ2024B10U 7Z92941
Text: ObE .D N AMER PHI LIPS /D ISCR ET E [^ 5 3 ^ 3 1 A □□ISIS? □ • PZ1418B15U PZ1721B12U PZ2024B10U MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS N-P-N transistors fo r use in common-base, class-B, wideband am plifiers under c.w. conditions in m ilita ry and professional applications and intended to drive PZ1418B30U/PZ1721B25U/PZ2024B20U
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PZ1418B15U
PZ1721B12U
PZ2024B10U
PZ1418B30U/PZ1721B25U/PZ2024B20U
bb53T31
0D1S13S
T-33-0?
epsilam
PZ2024B10U
7Z92941
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U1020
Abstract: No abstract text available
Text: N AflER P H I L I P S / D I S C R E T E 25E D • bbS3T31 0032331 1 ■ bY32y SERIES A _ T -Q 3 -I7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended for use in chopper applications as well as in
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bbS3T31
bY32y
BY329â
BY329
bbS3ci31
T-03-17
U1020
bS3131
U1020
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE » bbS3^3]> 0037301 R31 « A P X BT151 SERIES J V THYRISTORS Glass-passivated thyristors in TO-220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications include
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BT151
O-220AB
BT151-500R
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BAV21
Abstract: No abstract text available
Text: • bb53131 0[]2b30D ODfl HIAPX N AMER PHILIPS/DISCRETE b'lE 3> BAV18 to 21 J V GENERAL PURPOSE DIODES Silicon planar epitaxial diodes in DO-35 envelopes; intended for switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.
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bb53131
2b30D
BAV18
DO-35
BAV19
BAV20
BAV21
100ns
BAV21
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