BYQ28
Abstract: No abstract text available
Text: N A ME R PHILIPS/DISCRETE 2 SE D • 1^53=131 0 0 2 2 3 T 5 _ _ S ■ BYQ28 SERIES A 7 - 0 3 -1 7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward
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BYQ28
operati1-03-17
bbS3T31
0DEEM03
D0EE404
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BUZ84
Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 QDlMblt 1 ■ BUZ 84 ^ - 5 ^ 1 3 PowerMOS transistor July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
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BUZ84
Q0147QE
T-39-13
BIXZ84
BUZ84
t03 package transistor pin dimensions
BU184
TRANSISTOR 13-h
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RTC11175Y
Abstract: MRB11175Y
Text: H AMER PHILIPS/DISCRETE ObE D • bbSBTBl OD1SGS1 4 ■ MRB11175Y T - 33- 6" A PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,
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MRB11175Y
FO-67
T-33-/LS
7Z21013
7294SÃ
RTC11175Y
MRB11175Y
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transistor BS170
Abstract: max 1987 BS170 kbl transistor
Text: BS170 J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • Low RDSon• Direct interface to C-MOS, T T L , etc.
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BS170
7Z88773
transistor BS170
max 1987
BS170
kbl transistor
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BUZ84
Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
Text: N AMER PH IL IPS/ DI SC RE TE ObE D P o w e rM O S tra n s is to r • ^53=131 QDlMblt 1 ■ B U Z 84 ^ - 5 ^ 1 3 July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Draln-source voltage VDS Drain current d.c. Id Total p*wer dissipation *tot Drain-source on-state resistance
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BUZ84
ttS3131
T-39-13
Q0147QE
t03 package transistor pin dimensions
V103 TRANSISTOR
V103
transistor t03
buz84 ma
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CNR50
Abstract: optocoupler ic BS415 BS7002 TDA8385
Text: Product specification P hilips Sem iconductor» Dedicated IC-optocoupter CNR50 FEATURES • A cost effective optocoupler with integrated additional functions • A wide body DIL 8 encapsulation with a pin distance of 10.16 mm • A clearance of 9.6 mm minimum
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CNR50
CNR50
bb53T31
003532b
optocoupler ic
BS415
BS7002
TDA8385
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BUZ94
Abstract: No abstract text available
Text: PowerMOS transistor_ BUZ94_ N AMER PHILIPS/DISCRETE QtE D • L 3S3T31 0014b75 4 ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
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BUZ94_
3S3T31
0014b75
BUZ94
T-39-13
bb53T31
0014bfll
BUZ94
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/ DISCRE TE DQEObSS b 5SE D PowerMOS transistor Fast Recovery Diode FET BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery
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BUK627-450B
b53T31
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GRM Series 103
Abstract: BTS59-850R M2279 M1439 LT 907 S BTS59-1200R DT2000 BTS59-1200 BTS59 IEC134
Text: N AMER P H I L I P S / DISCRETE ObE D • ^53^31 OD11ÖÖ1 3 ■ II BTS59 SERIES A T" _ I S ’- 1 S ' FAST GATE TURN-OFF THYRISTORS rSrrSEr-r"-'-QUICK REFERENCE DATA Repetitive peak off-state voltage Non-repetitive peak on-state current
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bS3T31
BTS59
OT-93;
BTS59-850R
1000R
1200R
M2282
GRM Series 103
M2279
M1439
LT 907 S
BTS59-1200R
DT2000
BTS59-1200
IEC134
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