20/IGBT FF 450
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE ]> • bbSBIBl 0 0 3 0 1 :1.1 633 « A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor Protected IGBT QUICK REFERENCE DATA GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in
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O220AB
BUK856-450IX
20/IGBT FF 450
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GS 78L05 N
Abstract: No abstract text available
Text: Philips Semiconductors b b S 3 T 31 7 ? a • Ap X ^P ro d u ctsp ecificat^ VHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE BLF248 bR E D PIN CONFIGURATION FEATURES • High power gain • Easy power control 1 • Good thermal stability /~i • Gold metallization ensures
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BLF248
OT262
MCB627
GS 78L05 N
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philips ET-E 60
Abstract: No abstract text available
Text: Philips Semiconductors • bbSBTBl D02HQ41 OTB HIAPX AMER PH IL IPS /DISCRETE N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 QUICK REFERENCE DATA FEATURES MIN. MAX. UNIT - 25 V PMBF5484 1 5 mA PMBF5485 4 10 mA • Low noise SYMBOL • Interchangeability of drain and
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D02HQ41
PMBF5484;
PMBF5485;
PMBF5486
PMBF5484
PMBF5485
-SOT23
philips ET-E 60
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Untitled
Abstract: No abstract text available
Text: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.
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bhS3T31
0031b53
BFQ68
OT122A
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Untitled
Abstract: No abstract text available
Text: Philips S em iconductors • b b S B IB l DQ EbS7T 77A M APX Prelim inary specification BAT81/82/83 Schottky barrier diodes N AH ER P H I L I P S / D I S C R E T E DESCRIPTION General purpose and switching Schottky barrier diodes in a SOD68 envelope, with an integrated
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BAT81/82/83
BAT81
BAT82
BAT83
bb53831
D02b2fl2
bb53T31
DO-34)
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • Product specification bb53^31 OOBOObH <13T « A P X VHF push-pull power MOS transistor BLF368 N AMER PHILIPS/DISCRETE bTE PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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BLF368
OT262
MCA950
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PL 431 transistor
Abstract: No abstract text available
Text: Philips Semiconductors • bb53^31 OOS'lObM 157 M A P X Product specification UHF linear push-pull power transistor “ BLV58 N AMER PHILIPS/DISCRETE FEATURES • High power gain D "- ■ QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
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BLV58
MBA451
PL 431 transistor
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Untitled
Abstract: No abstract text available
Text: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections
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J308/309/310
-TO-92
MCD212
bbS3831
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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BLV948
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Untitled
Abstract: No abstract text available
Text: P h ilip s S e m ic o n d u c to rs ^ bb53B31 0038177 STT H IA P X Preliminary specification Silicon planar epitaxial transistor 2N5680 N AUER PHILIPS/DISCRETE bBE D QUICK REFERENCE DATA PARAMETER SYMBOL collector current MIN. MAX. UNIT - V - 120 V - 1 A Tcase < 25 °C
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bb53B31
2N5680
bb53T31
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE D bbS3T31 O D S m O S S3T « A P X Product Specification Philips Semiconductors BUK856-400IZ Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
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bbS3T31
BUK856-400IZ
bb53831
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Untitled
Abstract: No abstract text available
Text: Philips S em iconductors bb53T31 0 0 30 1 7 3 6B3 • APX UHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE Product specification BLF548 b^E D . — PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability
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bb53T31
BLF548
MSB008
OT262A2
MRA526
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductor" bbS3*131 0 0 2 4 3 m 618 • APX N AF1ER PHILIPS/DISCRETE Product specification b?E D 1 Schottky barrier diode DESCRIPTION A Schottky barrier diode with an integrated protection ring against static discharges. This diode, in a SOD80C SMD envelope, is intended
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OD80C
BAS85
bb53831
002431b
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Untitled
Abstract: No abstract text available
Text: bbSHTBl 0D32423 625 Philips Semiconductors APX Preliminary specification CATV amplifier module BGY787 N AMER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN • Excellent linearity • Extremely low noise input • Silicon nitride passivation 2 common • Rugged construction
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0D32423
BGY787
OT115C
44dBmV;
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Untitled
Abstract: No abstract text available
Text: • Philips Semiconductors bbS3T31 0032377 01S APX Product specification BGY88 CATV amplifier module N AMER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction
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bbS3T31
BGY88
OT115C
DIN45004B;
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