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    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b5E D • bb53531 0DSfl452 171 I IAPX BUV26F BUV26AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control


    OCR Scan     		PDF bb53531 0DSfl452 BUV26F BUV26AF OT186

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b5E bb53531 Q037flSb 553 • APX D BSS50 to 52 N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving. P-N-P complements are the BSS60, BSS61 and BSS62.


    OCR Scan     		PDF bb53531 Q037flSb BSS50 BSS60, BSS61 BSS62. BSS50 BSS51 BSS52 bbS3531

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b5E D bb53531 0D27575 7bE • APX BC556 to 558 yv. SILICON PLANAR EPITAXIAL TRANSISTORS I General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA


    OCR Scan     		PDF bb53531 0D27575 BC556 BC556 BC557 BC558 BC556A

    equivalent transistor c 5888

    Abstract: No abstract text available
    Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency


    OCR Scan     		PDF bbS3R31 BFS520 OT323 OT323 OT323. equivalent transistor c 5888

    Untitled

    Abstract: No abstract text available
    Text: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special


    OCR Scan     		PDF b53531 002MLi21 BF510 BF510) BF511) BF512) BF513) bb53531 D02MbE4

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bRE D bb53R31 003040? flTfl M A R X Product Specification Philips Semiconductors BUK104-50L/S BUK104-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic


    OCR Scan     		PDF bb53R31 BUK104-50L/S BUK104-50LP/SP

    transistor bt 808

    Abstract: transistor 1548 b
    Text: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2


    OCR Scan     		PDF 00250bb BFQ67 transistor bt 808 transistor 1548 b

    Untitled

    Abstract: No abstract text available
    Text: bbSBRBl D O E n Q l 101 • APX Philips Sem iconductors Prelim inary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b^E » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


    OCR Scan     		PDF BLF221B bb53T31

    Untitled

    Abstract: No abstract text available
    Text: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband


    OCR Scan     		PDF BFG195

    Untitled

    Abstract: No abstract text available
    Text: i i N AMER PHILIPS/DISCRETE b^E D bbSBTBl 00B7SSfl bfl3 • APX BC546 to 548 L SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic TO-92 envelope, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA


    OCR Scan     		PDF 00B7SSfl BC546 BC546 BC548 BC547 AC546 BC546A, BC547A BC548A BC546B,

    Untitled

    Abstract: No abstract text available
    Text: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve


    OCR Scan     		PDF bbS3T31 BLV98CE OT171 bb53T31 MCA924

    BJE 42

    Abstract: 9 BJE 42
    Text: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability


    OCR Scan     		PDF bbS3R31 003010b BLF542 MBA931 MRA732 MRA971 BJE 42 9 BJE 42

    c82 004

    Abstract: C4V7 517
    Text: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass


    OCR Scan     		PDF BZD23 BZD23-C3V6 BZD23-C7V5 C7V5-C510 bb53R31 2b71R S0D81. c82 004 C4V7 517

    Untitled

    Abstract: No abstract text available
    Text: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are


    OCR Scan     		PDF BFQ135 OT172A1

    BJE 42

    Abstract: No abstract text available
    Text: Philips Sem iconductors bbS B TB l Q03QQ16 TST IM A P X Product specification VHF power MOS transistor BLF277 N AnER PHILIPS/BISCRETE FEATURES b*E ]> PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability


    OCR Scan     		PDF Q03QQ16 BLF277 OT119 BJE 42

    Untitled

    Abstract: No abstract text available
    Text: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability


    OCR Scan     		PDF BLF175 OT123 MCA26 bbS3T31

    Untitled

    Abstract: No abstract text available
    Text: Philip^emiconductor^^^^ U tb S 3 R 31 DQ 3 1 Q T 7 273 H IA P X Product specification NPN 6.5 GHz wideband transistor ^ BF751 N AMER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING PIN • High power gain DESCRIPTION • Low noise figure 1 collector • Gold metallization ensures


    OCR Scan     		PDF BF751 BF751 bb53531 BB478

    BB135

    Abstract: No abstract text available
    Text: LLS3T31 Philips Semiconductors DD2b3Tl HM7 MB A P X Preliminary specification BB135 UHF variable capacitance diode N AMER PHILIPS/DISCRETE b'lE D Q U IC K R E F E R E N C E DATA DESCRIPTION The BB135 is a silicon, double-implanted variable capacitance diode in planar


    OCR Scan     		PDF LLS3T31 BB135 BB135 OD323. bb53531 D02b401

    Untitled

    Abstract: No abstract text available
    Text: b b 5 3 c1 3 1 Philips S em iconductors 0030055 T27 M A P X Product specification VHF linear push-pull power MOS transistor BLF348 N AUER PHILIPS/DISCRETE b 'lE lT PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability


    OCR Scan     		PDF BLF348 OT262 bbS3831 UCB237

    BFR94

    Abstract: BFR94A
    Text: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross


    OCR Scan     		PDF BFR94A OT122E BFR94A BFR94. Q031flfl3 BFR94

    Untitled

    Abstract: No abstract text available
    Text: N A PIER PHILIPS/DISCRETE b5E T> m bbSBTBl DDE7flm DEE B A P X BSR50 to 52 I N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended fo r industrial switching applications e.g. print hammer, solenoid, relay and lamp driving.


    OCR Scan     		PDF BSR50 BSR60, BSR61 BSR62. BSR50 BSR51 BSR52 BSR50;

    T34 rectifier

    Abstract: No abstract text available
    Text: DDEbT13 151 APX N A PIER PHILIPS/DISCRETE bTE 1N5059 to 5062 ]> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients. They are intended fo r rectifier applications as well as general purpose applications in television and


    OCR Scan     		PDF DDEbT13 1N5059 7Z88032 bb53531 002b51fl 002b515 T34 rectifier