diode 8255
Abstract: LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z
Text: Bay Linear Inspire the Linear Power B8250 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features The B-8250 line of zero bias Schottky detector diodes by Bay Linear have been engineered for use in small signal Pin<-20 dBm applications at frequencies below 2.0
|
Original
|
PDF
|
B8250
B-8250
diode 8255
LINEAR MARKING
8253/8254
MARKING e6 SOT26
8251 cross
c5 marking code sot-323
Diode BAY 80
sot-23-3 c6
MARKING C3 SOT-323
Diode c4z
|
BAY41
Abstract: BAY43 Q60201-Y bay 42
Text: BAY 41, BAY 42, BAY 43 Silicon planar sw itching diodes Silicon planar diodes BAY 41, BAY 42 and BAY 43 are suitable for high-speed, medium-current switching applications. They are supplied in glass-cases 51 A 2 DIN 41880 D O -7 . The cathode is identified by a colour ring.
|
OCR Scan
|
PDF
|
201-Y
Q60201-Y42
Q60201-Y43
BAY41
BAY43
Q60201-Y
bay 42
|
BAY41
Abstract: tu 104 BAY42 BAY43
Text: BAY 41 BAY 42 BAY 43 S iliziu m -P lan ar-S ch aitd io d en Die Silizium-Planar-Dioden B A Y 41, B A Y 42 und B A Y 43 im Glasgehäuse 51 A2 DIN 41 880 D O -7 , eignen sich zum Einsatz als schnelle Schaltdioden bei mittleren Strömen. Die Kathode ist durch einen Farbring gekennzeichnet.
|
OCR Scan
|
PDF
|
BAY41,
BAY42
BAY43
BAY41
Q60201-Y41
Q60201-Y42
Q60201-Y43
tu 104
|
Diode BAY 19
Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Text: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V
|
OCR Scan
|
PDF
|
BAW21
Diode BAY 19
Diode BAY 21
Diode BAY 80
IR 10D DIODE
Diode BAY 18
Diode BAY 45
Diode BAY 42
"BAY 21"
BAY18
bay 17 diode
|
BAY 80 diode
Abstract: Diode BAY 54 Diode BAY 55 BAY69 BAY 69 Diode BAY 80
Text: TELEFUNKEN ELECTRONIC 17E D TllUllFMIMKilifl electronic • â'îSOO'ïfc. O O O ^ M S 7 ■ AL66 BAY 68 • BAY 69 Creative Technologies T - O Z - 0 ° l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm •110« Cathoda /«<1.6 g<Q55
|
OCR Scan
|
PDF
|
|
23J2
Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
Text: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30
|
OCR Scan
|
PDF
|
1N456
1N457
1N461
1N462
1N483
1N484
CB-26)
23J2
BAW32D
BAY18
1n484a
|
Diode BAY 46
Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j
|
OCR Scan
|
PDF
|
1N456
BAW21A
CB-26)
CB-127
Tamb100Â
Tamb125Â
Tamb60Â
CB-127
CB-127.
Diode BAY 46
1N 4000 diode
1N3069
BA224-220
BAV45
BAY41
Diode BAY 41
Diode BAY 80
BAX12
SFD49
|
Diode BAY 46
Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a
|
OCR Scan
|
PDF
|
1N456
BAW21A
SFD79
CB-26)
baw55
CB-127
CB-127.
Diode BAY 46
Diode BAY 80
Diode BAY 74
Diode BAY 45
Diode BAY 19
diode BAW55
BAY 73 diode
1N3595
Diode BAY 21
Diode BAY 41
|
Diode BAY 71
Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a
|
OCR Scan
|
PDF
|
1N456
BAW21A
BAW75
BAW76
BAX84
SFD43
CB-104)
34/CB-104)
CB-127
CB-127.
Diode BAY 71
Diode BAY 45
Diode BAY 46
Diode BAY 88
BAW21
ESM 3070
1n 4009 diode
BAY67
SFD49
|
Diode BAY 46
Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j
|
OCR Scan
|
PDF
|
1N456
BAW21A
1N456
BAX12
CB-102)
CB-104)
Diode BAY 46
Diode BAY 45
Diode BAY 21
Diode BAY 80
Diode BAY 19
BAY 73 diode
Diode BAY 41
Diode BAY 72
Diode BAY 42
bav 21 diode
|
Diode BAY 61
Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Text: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12
|
OCR Scan
|
PDF
|
3AX11/IO
3AX11/IU
11/ilo
3AX11/IÃ
3AX11
BAX11
79/III
79/IV
26/II
Diode BAY 61
Diode BAY 55
Diode BAY 80
BXY 36 DIODE
diode sax 34
bxy26
Diode BAY 68
Diode BAY 23
|
Diode BAY 21
Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Text: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j
|
OCR Scan
|
PDF
|
1N456
BAW21A
CB-26)
Diode BAY 21
Diode BAY 18
Diode BAY 32
Diode BAY 19
Diode BAY 12
Diode BAY 45
BAY46
BAW32B
BAY18
BAW32D
|
BAX84
Abstract: 4531-2 esm 4148 1N3731 1N4149 1N4152 1N662 1N916 BAW75 BAW76
Text: silicon signal diodes diodes de signal au silicium 1H0MS0N-CSF Type •o v r -v r m Vf / if Ir / Vr |r i Vr c / *IT «F Case Tamb150°C max m A max (V) max (V) high speed switching (mA) max <nA) (V) max t*A ) (V) max max (pF) (ns) (mA) commutation rapide
|
OCR Scan
|
PDF
|
Tamb150Â
1N662
1N916
BAW75
BAW76
BAX84
SFD43
CB-104)
34/CB-104)
CB-127
4531-2
esm 4148
1N3731
1N4149
1N4152
|
0515
Abstract: 1N484 BAV17 BAV18 BAV19 BAV20 BAV21 BA 30 C AA132
Text: Diodes General purpose diodes Type Fig. Nr. Maximum ratings Characteristics Py ^thJA t/p at 'F /R V mA ma h ^m b mW = at mA V °C/W 160 100 25 200) 50 25 10 38 < 120) <400 1.35 ( < 1.8) 10 55 {< <400 1.35 10 70 (< 1 AA 139 ') 1 130 55 150 20 £ 0 .7 5 100
|
OCR Scan
|
PDF
|
BAV19
BAV20
BAV21
1N484
0515
BAV17
BAV18
BA 30 C
AA132
|
|
|
BA513
Abstract: BA521 BA517 BA543 BA521 diode BA523 BA531 BA519 BA533 BA544
Text: Silicijeve planarne signalne diode Silicon planar signal diodes Tip/Type I fav 1100M pri/at pri/at pri/at 1 MHz 25 °C i}*mb—25 °C 25°C Ur Ur=OV : mA " BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546
|
OCR Scan
|
PDF
|
BA511
1N4148
BA513
1N4448
BA517
1N4150
BA518
1N4151
BA519
1N4152
BA521
BA543
BA521 diode
BA523
BA531
BA533
BA544
|
iskra diode
Abstract: BA513 BA531 Iskra by dioda DIODE ISKRA BA519 Iskra BA-518 1N4153 silicon diodes BA517
Text: IS K R A E L E C T R O N IC S IN C 2SE D • 4 fifiB 4 7 7 Silicijeve planarne signalne diode Silicon planar signal diodes Uf prl/at If I fav *'. Übb : ■ ^trr > ' pri/at pri/at pri/at 1 MHz ¿tOÓ/iA: 25 °C Ùufib —25 °C 25°C Ur Ur=OV Tip/Type mA
|
OCR Scan
|
PDF
|
BA511
1N4148
BA513
1N4448
BA517
1N4150
BA518
1N4151
BA519
1N4152
iskra diode
BA531
Iskra by dioda
DIODE ISKRA
Iskra
BA-518
1N4153 silicon diodes
|
BA513
Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
Text: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150
|
OCR Scan
|
PDF
|
BA511
1N4148
BA513
1N4448
BAS17
1N4150
701/iA
BA518
1N4151
BA519
iskra diode
BA523
BA521
DIODE BA531
BA521 diode
BA531
iskra
BA533
|
Diode BAY 96
Abstract: Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67
Text: BAY 67 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: HF-Schaltdicide Applications: Switching RF signals Abmessungen in mm Dimensions in mm g 2 ,6 . II— 11 0 0 ,5 5 — |l- — - H I — •— —-2 6 -► m -7 .2 -— —- 2 6 - -
|
OCR Scan
|
PDF
|
-26-J
Diode BAY 96
Diode BAY 55
BAY67
RF-45
IR diodes TFK 4
TFK diode
TFK diodes
DIODE R 67
|
Diodes de redressement
Abstract: BAY21 BAY18 BOITIER MU86 f 1010 fr 608 TF80 650C RG606 fr 1004 diodes
Text: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes VRWM 'FSM VF @ •f r m 10 ms •f m A (A) (V) vrmm TYPES 60 A / 'F (A) tease = 75°C •R G 6 0 2 F -R G 6 0 2 *RG 604 F - RG 604 •RG 606 F - RG 606 *RG 608 F - RG 608 *RG 610 F - RG 610 100 A
|
OCR Scan
|
PDF
|
|
BAW21
Abstract: 3595 BAW55 BAY41 diode BAW55 SFD79 1N3595 BAY74 BAY 42 CB-127
Text: silicon signal diodes diodes de signal au silicium Vr-Vrm Type •o max V vF / max max (mAI (V) low leakage O 1HOMSON-CSF IR if Vr / max (nA) IfflA) ■R C t|T max max (pF) Vs ) / Vr Tamb 150°C max ^A ) (V) (V) Tamb = 25°C / Case if ImAI faible courant de fuite
|
OCR Scan
|
PDF
|
CB-26I
CB-127
CB-127.
SFD79
CB-26)
baw55
BAW21
3595
BAY41
diode BAW55
1N3595
BAY74
BAY 42
|
IR diodes TFK 4
Abstract: TTC 103 tfk bay 78 TFK diodes TTC 104 Diode BAY 80 4G75 BAY78 74343 diode s .* tfk
Text: BAY 78 Silizium-Epitaxial-Planar-Dioden-Quartett Silicon epitaxial planar diodes quad Anwendungen: Ringmodulatoren und Brückenschaltungen Applications: Ringmodulators and bridge circuits Abmessungen in mm Dimensions in mm 1 3 5 5_ -~r~ ?r 3 1 - 5 9,5 U — 9 .5 -»
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: BAY 92 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Schnelle Schalter, für hohe Betriebsspannungen Applications: Fast switches, with high supply voltages Abmessungen in mm Dimensions in mm 1 1 Il_ I If— "111 1 1 1 1U - H i —
|
OCR Scan
|
PDF
|
|
Diode BAY 93
Abstract: a9 sot 23 diode
Text: TELEFUNKEN ELECTRONIC 17E D Û00S753 b • AL GG ■ BAY 93 ■¡nH IF(U I«IM electronic Creative Technologies T -Q l-Q j Silicon Epitaxial Planar Diode Applications: Very fast switches Dimensions in mm Cathode »26 Standard glass case 5 4 A 2 DIN 41880 JEDEC DO 35
|
OCR Scan
|
PDF
|
00S753
Diode BAY 93
a9 sot 23 diode
|
Diode BAY 45
Abstract: No abstract text available
Text: TELEFUNKEN EL E C T R O N I C 17E D • ö^aQDSb 000*3753 b ■ AL£6 BAY 93 TnySFyrci& aM e le ctro n ic Creative T ec h n o lo g « T -Q l-O j Silicon Epitaxial Planar Diode Applications: Very fast switches Dimensions in mm 9110 • Cattiodo \ 'f. " -II- 1
|
OCR Scan
|
PDF
|
ruS25Â
Diode BAY 45
|
