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    BAY 80 DIODE Search Results

    BAY 80 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    BAY 80 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode 8255

    Abstract: LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z
    Text: Bay Linear Inspire the Linear Power B8250 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features The B-8250 line of zero bias Schottky detector diodes by Bay Linear have been engineered for use in small signal Pin<-20 dBm applications at frequencies below 2.0


    Original     		B8250 B-8250 diode 8255 LINEAR MARKING 8253/8254 MARKING e6 SOT26 8251 cross c5 marking code sot-323 Diode BAY 80 sot-23-3 c6 MARKING C3 SOT-323 Diode c4z PDF

    3055e

    Abstract: 431 sot-23 zener B431L B431LAK3 B431LAM B431LAZ B431LBK3 B431LBM B431LBZ B431LCM
    Text: Bay Linear Inspire the Linear Power B431L 1.24V Adjustable Shunt Regulator Description Features The B431L is a three terminal adjustable shunt regulator with thermal stability of 50ppm/°C. The output voltage can be adjusted to any value from 1.24V VREF to 16V with two


    Original     		B431L B431L 50ppm/ 3055e 431 sot-23 zener B431LAK3 B431LAM B431LAZ B431LBK3 B431LBM B431LBZ B431LCM PDF

    Voltage Regulator LM78L09 TO-92 package

    Abstract: Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V
    Text: Bay Linear Inspire the Linear Power LM78LXX 100mA Positive Voltage Regulator Description Features The Bay Linear LM78LXX is integrated linear positive regulator with three terminals. The LM78LXX offer several fixed output voltages making them useful in wide range of


    Original     		LM78LXX 100mA LM78LXX 100mA Voltage Regulator LM78L09 TO-92 package Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V PDF

    BAY41

    Abstract: BAY43 Q60201-Y bay 42
    Text: BAY 41, BAY 42, BAY 43 Silicon planar sw itching diodes Silicon planar diodes BAY 41, BAY 42 and BAY 43 are suitable for high-speed, medium-current switching applications. They are supplied in glass-cases 51 A 2 DIN 41880 D O -7 . The cathode is identified by a colour ring.


    OCR Scan     		201-Y Q60201-Y42 Q60201-Y43 BAY41 BAY43 Q60201-Y bay 42 PDF

    BAY41

    Abstract: tu 104 BAY42 BAY43
    Text: BAY 41 BAY 42 BAY 43 S iliziu m -P lan ar-S ch aitd io d en Die Silizium-Planar-Dioden B A Y 41, B A Y 42 und B A Y 43 im Glasgehäuse 51 A2 DIN 41 880 D O -7 , eignen sich zum Einsatz als schnelle Schaltdioden bei mittleren Strömen. Die Kathode ist durch einen Farbring gekennzeichnet.


    OCR Scan     		BAY41, BAY42 BAY43 BAY41 Q60201-Y41 Q60201-Y42 Q60201-Y43 tu 104 PDF

    Diode BAY 19

    Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
    Text: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V


    OCR Scan     		BAW21 Diode BAY 19 Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode PDF

    23J2

    Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
    Text: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30


    OCR Scan     		1N456 1N457 1N461 1N462 1N483 1N484 CB-26) 23J2 BAW32D BAY18 1n484a PDF

    Diode BAY 46

    Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j


    OCR Scan     		1N456 BAW21A CB-26) CB-127 Tamb100Â Tamb125Â Tamb60Â CB-127 CB-127. Diode BAY 46 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49 PDF

    Diode BAY 46

    Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
    Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a


    OCR Scan     		1N456 BAW21A SFD79 CB-26) baw55 CB-127 CB-127. Diode BAY 46 Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41 PDF

    Diode BAY 71

    Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a


    OCR Scan     		1N456 BAW21A BAW75 BAW76 BAX84 SFD43 CB-104) 34/CB-104) CB-127 CB-127. Diode BAY 71 Diode BAY 45 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49 PDF

    Diode BAY 46

    Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
    Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j


    OCR Scan     		1N456 BAW21A 1N456 BAX12 CB-102) CB-104) Diode BAY 46 Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode PDF

    Diode BAY 61

    Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
    Text: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12


    OCR Scan     		3AX11/IO 3AX11/IU 11/ilo 3AX11/IÃ 3AX11 BAX11 79/III 79/IV 26/II Diode BAY 61 Diode BAY 55 Diode BAY 80 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 PDF

    Diode BAY 21

    Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
    Text: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j


    OCR Scan     		1N456 BAW21A CB-26) Diode BAY 21 Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D PDF

    BAX84

    Abstract: 4531-2 esm 4148 1N3731 1N4149 1N4152 1N662 1N916 BAW75 BAW76
    Text: silicon signal diodes diodes de signal au silicium 1H0MS0N-CSF Type •o v r -v r m Vf / if Ir / Vr |r i Vr c / *IT «F Case Tamb150°C max m A max (V) max (V) high speed switching (mA) max <nA) (V) max t*A ) (V) max max (pF) (ns) (mA) commutation rapide


    OCR Scan     		Tamb150Â 1N662 1N916 BAW75 BAW76 BAX84 SFD43 CB-104) 34/CB-104) CB-127 4531-2 esm 4148 1N3731 1N4149 1N4152 PDF

    sy 170

    Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
    Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170


    OCR Scan     		N4001. sy 170 SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR PDF

    BA513

    Abstract: BA521 BA517 BA543 BA521 diode BA523 BA531 BA519 BA533 BA544
    Text: Silicijeve planarne signalne diode Silicon planar signal diodes Tip/Type I fav 1100M pri/at pri/at pri/at 1 MHz 25 °C i}*mb—25 °C 25°C Ur Ur=OV : mA " BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546


    OCR Scan     		BA511 1N4148 BA513 1N4448 BA517 1N4150 BA518 1N4151 BA519 1N4152 BA521 BA543 BA521 diode BA523 BA531 BA533 BA544 PDF

    iskra diode

    Abstract: BA513 BA531 Iskra by dioda DIODE ISKRA BA519 Iskra BA-518 1N4153 silicon diodes BA517
    Text: IS K R A E L E C T R O N IC S IN C 2SE D • 4 fifiB 4 7 7 Silicijeve planarne signalne diode Silicon planar signal diodes Uf prl/at If I fav *'. Übb : ■ ^trr > ' pri/at pri/at pri/at 1 MHz ¿tOÓ/iA: 25 °C Ùufib —25 °C 25°C Ur Ur=OV Tip/Type mA


    OCR Scan     		BA511 1N4148 BA513 1N4448 BA517 1N4150 BA518 1N4151 BA519 1N4152 iskra diode BA531 Iskra by dioda DIODE ISKRA Iskra BA-518 1N4153 silicon diodes PDF

    BA513

    Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
    Text: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150


    OCR Scan     		BA511 1N4148 BA513 1N4448 BAS17 1N4150 701/iA BA518 1N4151 BA519 iskra diode BA523 BA521 DIODE BA531 BA521 diode BA531 iskra BA533 PDF

    Diode BAY 96

    Abstract: Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67
    Text: BAY 67 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: HF-Schaltdicide Applications: Switching RF signals Abmessungen in mm Dimensions in mm g 2 ,6 . II— 11 0 0 ,5 5 — |l- — - H I — •— —-2 6 -► m -7 .2 -— —- 2 6 - -


    OCR Scan     		-26-J Diode BAY 96 Diode BAY 55 BAY67 RF-45 IR diodes TFK 4 TFK diode TFK diodes DIODE R 67 PDF

    Diodes de redressement

    Abstract: BAY21 BAY18 BOITIER MU86 f 1010 fr 608 TF80 650C RG606 fr 1004 diodes
    Text: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes VRWM 'FSM VF @ •f r m 10 ms •f m A (A) (V) vrmm TYPES 60 A / 'F (A) tease = 75°C •R G 6 0 2 F -R G 6 0 2 *RG 604 F - RG 604 •RG 606 F - RG 606 *RG 608 F - RG 608 *RG 610 F - RG 610 100 A


    OCR Scan     		PDF

    BAW21

    Abstract: 3595 BAW55 BAY41 diode BAW55 SFD79 1N3595 BAY74 BAY 42 CB-127
    Text: silicon signal diodes diodes de signal au silicium Vr-Vrm Type •o max V vF / max max (mAI (V) low leakage O 1HOMSON-CSF IR if Vr / max (nA) IfflA) ■R C t|T max max (pF) Vs ) / Vr Tamb 150°C max ^A ) (V) (V) Tamb = 25°C / Case if ImAI faible courant de fuite


    OCR Scan     		CB-26I CB-127 CB-127. SFD79 CB-26) baw55 BAW21 3595 BAY41 diode BAW55 1N3595 BAY74 BAY 42 PDF

    IR diodes TFK 4

    Abstract: TTC 103 tfk bay 78 TFK diodes TTC 104 Diode BAY 80 4G75 BAY78 74343 diode s .* tfk
    Text: BAY 78 Silizium-Epitaxial-Planar-Dioden-Quartett Silicon epitaxial planar diodes quad Anwendungen: Ringmodulatoren und Brückenschaltungen Applications: Ringmodulators and bridge circuits Abmessungen in mm Dimensions in mm 1 3 5 5_ -~r~ ?r 3 1 - 5 9,5 U — 9 .5 -»


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BAY 92 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Schnelle Schalter, für hohe Betriebsspannungen Applications: Fast switches, with high supply voltages Abmessungen in mm Dimensions in mm 1 1 Il_ I If— "111 1 1 1 1U - H i —


    OCR Scan     		PDF

    Diode BAY 45

    Abstract: No abstract text available
    Text: TELEFUNKEN EL E C T R O N I C 17E D • ö^aQDSb 000*3753 b ■ AL£6 BAY 93 TnySFyrci& aM e le ctro n ic Creative T ec h n o lo g « T -Q l-O j Silicon Epitaxial Planar Diode Applications: Very fast switches Dimensions in mm 9110 • Cattiodo \ 'f. " -II- 1


    OCR Scan     		ruS25Â Diode BAY 45 PDF