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    BAW62 SOT23 Search Results

    BAW62 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    BAW62 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CS9013

    Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
    Text: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72


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    BAV19 BAV20 BAV21 BAV102 BAV103 BAW62 BAW76 BAX13 BAX16 BAY19 CS9013 CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac PDF

    1N4148 SMD PACKAGE

    Abstract: BAW62 SMD philips 1n4148 SMD 1N4148 SMD sot23 PACKAGE BAV21 SOT143B BAS21H diode 1N4148 SMD 1PS184 BAW62 SOT23 1PS226
    Text: Semiconductors Date of release: September 2004 Switching diodes portfolio trr max. [ns] VR max. [V] General purpose switching diodes: double, triple and quad diodes Package Size in mm Ptot [mW] SOT346 SC-59 Plastic SMD SOT457 (SC-74) Plastic SMD SOT23 SOT143B


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    OT346 SC-59) OT457 SC-74) OT143B OT323 SC-70) OT363 SC-88) OT666 1N4148 SMD PACKAGE BAW62 SMD philips 1n4148 SMD 1N4148 SMD sot23 PACKAGE BAV21 SOT143B BAS21H diode 1N4148 SMD 1PS184 BAW62 SOT23 1PS226 PDF

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932 PDF

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N PDF

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original
    BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101 PDF

    BAV105

    Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30


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    DO-35 DO-34 OD123 OD80C OD110 OT143 OT323/ BAW62/ BAV21 BAV10 BAV105 BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12 PDF

    pm2222a

    Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
    Text: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT


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    BA582 OD123 BA482 BA682 BA683 BA483 BAL74 BAW62, 1N4148 pm2222a SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS PDF

    bc5478

    Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
    Text: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L


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    BZV49-C10 BZV85-C10 BZV49-C11 BZV85-C11 BZV49-C12 S0T89 BZV85-C12 BZV49-C13 BZV85-C13 bc5478 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd PDF

    BAS 20 SOT23

    Abstract: BAW62 SOT23 1s920 3BT SOT-23 1n4376 MMBD1201 BAY71 1N916 1S921 FDLL4148
    Text: Vrrm Volts Min 100 80 75 VFM @IF rr (ns) Package* (nA) (Volts) (mA) Max Max Max Ir r m Device 10 4.0 1.0 30 4.0 1.2 200 bsoiiao Düaqsoa 3t.T V RRM (Volts) Min 75 DO-35 Device ilf b fiL D . Silicon Single Junction Diodes (continued) mnscs Vm @lF 1* (ns) Package*


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    1N916 DO-35 1N916B 1S921 FDLL4148 LL-34* FDLL4448 BAS 20 SOT23 BAW62 SOT23 1s920 3BT SOT-23 1n4376 MMBD1201 BAY71 PDF

    1S920

    Abstract: 1n4150 sot-23 BAY71 MMB0914 1N916 1N916B 1S921 D0-35 FDLL4148 FDLL4448
    Text: h ô L D. • Silicon Single Junction Diodes continued bSOHBG NATL SEMICOND Vrrm (Volts) Min 100 80 75 Device VFM @ IF l«r I rrm (nA) (ns) (Volts) (mA) Max Max Max Package* 1N916 25 1.0 10 4.0 DO-35 1N916B 25 1.0 30 4.0 DO-35 (Volts) Min 75 70 DO-35 200


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    bS0113G 1N916 D0-35 1N916B DO-35 1S921 FDLL4148 LL-34* FDLL4448 1S920 1n4150 sot-23 BAY71 MMB0914 D0-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3S31 Q02M355 330 H A P X N AMER PHILIPS/DISCRETE BAV70 b7E J> JV SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists o f tw o diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.


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    bbS3S31 Q02M355 BAV70 BAV70 BAW62 PDF

    SOT23 marking A7p

    Abstract: A7P DIODE a7p marking marking code A7p marking A7p bav99 a7p marking code a7p marking sot23 73b diode A7p marking code diode A7p
    Text: 7110fl2b G 0 b Ä 3 3 3 73b PHIN BAV99 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES ] The BAV99 consists of two diodes in a microminiature plastic envelope. The diodes are connected in series and the unit is intended for high-speed switching in thick and thin-film circuits.


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    7110fl2b BAV99 MLB390 SOT23 marking A7p A7P DIODE a7p marking marking code A7p marking A7p bav99 a7p marking code a7p marking sot23 73b diode A7p marking code diode A7p PDF

    code marking ssi sot-23

    Abstract: 7Z65148 MARKING code SSi SOT23 marking code SOT23 SSi BAS16 BAW62 AA715 ScansUX40
    Text: 711Dfl2ti QQbfl225 7 0 e! H P H I N BAS16 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits. Q UICK R EF ER E N C E DATA


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    711002t, BAS16 OT-23. code marking ssi sot-23 7Z65148 MARKING code SSi SOT23 marking code SOT23 SSi BAW62 AA715 ScansUX40 PDF

    1N4148 LL34

    Abstract: DH333 d1703 MBD914
    Text: Discrete Power and Signal Technologies Fairchild S em iconductor Selection Guides Single Junction Diodes Single Junction Diodes Surface Mount SOT-23 & LL34 Part Number Remarks RRM VF m (V ) M MBD1701/ A S in g le M ax so M M B D 1703/A S e rie s 50 M MBD1704/A


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    OT-23 MBD1701/ 1703/A MBD1704/A MBD1705/A MMBD2837 BAV74 BAV70 BAV99 FDLL4150 1N4148 LL34 DH333 d1703 MBD914 PDF

    diode a4p

    Abstract: a4p sot-23 A4P marking code BAV70 BAW62 philips sot-23 bav70 ScansUX40
    Text: 71]iOAc?b 00kfl321 T14 HPHIN BAV70 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.


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    711002b bfl321 BAV70 BAV70 diode a4p a4p sot-23 A4P marking code BAW62 philips sot-23 bav70 ScansUX40 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAL99 QUICK REFERENCE DATA PARAMETER


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    BAL99 Z690M BAW62 PDF

    Untitled

    Abstract: No abstract text available
    Text: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.


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    bb53c BAS16 BAW62; 7Z65148 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55


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    BAS55 bbS3131 7Z690B61 BAW62 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAW56 _/ V _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAW56 consists of tw o diodes in a m icrominiature plastic envelope. The anodes are commoned and the un it is intended fo r high-speed switching in th ick and th in -film circuits.


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    BAW56 BAW56 100S2 BAW62. PDF

    a7p marking

    Abstract: marking A7p sot23 a7p
    Text: BAV99 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV99 consists of tw o diodes in a m icrom iniature plastic envelope. The diodes are connected in series and the u n it is intended fo r high-speed switching in thick and th in -film circuits.


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    BAV99 BAV99 243pF 510MO BAW62. a7p marking marking A7p sot23 a7p PDF

    BAS678

    Abstract: BAW62 QDE4331 BAW62 SOT23 MBB111 apx 188
    Text: • Philips Semiconductors N ^ fc.b53T31 AMER 002432b S3T « A P X PH ILIP S /D IS C R FTF L7T - 1\ Product soecificatmn Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It


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    b53T31 002432b BAS678 10mAtoVâ bb53T31 QDE4331 BAS678 BAW62 BAW62 BAW62 SOT23 MBB111 apx 188 PDF

    500N50

    Abstract: t72 marking BAW62 sot23 Philips MARKING CODE BAS55 BAW62
    Text: oosmsti mtü « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode — N AMER PHILIPS/DISCRETE DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching


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    BAS55 bbS3T31 BAS55 BAW62 500N50 t72 marking BAW62 sot23 Philips MARKING CODE BAW62 PDF

    a7p marking

    Abstract: No abstract text available
    Text: • ^53*131 QQE43b7 OSE « A P X N AMER PHILIPS/DISCRETE BAV99 L7E D ; v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV99 consists of two diodes in a microminiature plastic envelope. The diodes are connected in series and the unit is intended for high-speed switching in thick and thin-film circuits.


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    QQE43b7 BAV99 BAV99 BAW62. a7p marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55 QUICK REFERENCE DATA SYMBOL


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    BAS55 7Z69086 BAW62 7Z73212 PDF