BAV 24 DIODE Search Results

BAV 24 DIODE Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

BAV 24 DIODE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mkp1830 Abstract: BZX55 Vishay baw 92 MKP1841 MKP1840 MKT1826 MBR40H100CT BZX55 C24 SS14 melf BZT52-V Text: COMPUTING, DIGITAL IMAGING, AND OFFICE AUTOMATION A pplic ation S olutions COMPUTERS AND PERIPHERALS V I S H AY I N T E R T E C H N O L O G Y, I N C . MARKET SOLUTIONS w w w. v i s h a y. c o m SEMICONDUCTORS RECTIFIERS Schottky single, dual Standard, Fast, and Ultra-Fast Recovery	Original	PDF	VSA-PL0023-0508 mkp1830 BZX55 Vishay baw 92 MKP1841 MKP1840 MKT1826 MBR40H100CT BZX55 C24 SS14 melf BZT52-V
S4 78a DIODE schottky Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	PDF	25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
2907A PNP bipolar transistors Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	PDF	OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Untitled Abstract: No abstract text available Text: SK25DGDL12T4 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper OJ:9 <J <JY; OH:9 =' P BQ RJA -%2&'' ,.8& */'& '5& /E/&1 =' P BQ UVSW RJ <JY;P C F <J%,+A .5 P @ +' =[ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +	Original	PDF	SK25DGDL12T4
transistors BC 543 Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	PDF	OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	PDF	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
2907A PNP bipolar transistors Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3	Original	PDF	O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	PDF	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Untitled Abstract: No abstract text available Text: Small-signal Discretes • 0.5 - 8 A, ≤ 100 V, single, double configurations incl. BISS load switches; 13 package options • High voltage transistors 150 - 500 V, 0.1 - 2 A incl. low VCEsat; 5 package options • Resistor-equipped transistors 0.1 - 0.6 A, ≤ 50 V; 8 package options	Original	PDF	OT223/SOT89 2N7002*
Infineon technology roadmap for mosfet Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.	Original	PDF	B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
e20231 Abstract: 20231 transistor E101 Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power	Original	PDF	G-200, 1-877-GOLDMOS 1301-PTE e20231 20231 transistor E101
E20124 Abstract: E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P Text: e E S A E PTE 20124* L E -R E 40 Watts, 1.465–1.513 GHz R P Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular	Original	PDF	150pF 1-877-GOLDMOS 1301-PTE E20124 E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P
si4800 Abstract: LM431AIM3 EPCOS 3650 DPA424R PC357N1T B540C BAV19WS DI-37 SL44 design of line frequency inductor and transformer Text: Design Idea DI-37 DPA-Switch 16.5 W DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology Telecom DPA424R 16.5 W 36-75 VDC 3.3 V Forward Sync. Rec. Design Highlights • • • • • voltages and linearly reduces the maximum duty cycle with	Original	PDF	DI-37 DPA424R si4800 LM431AIM3 EPCOS 3650 DPA424R PC357N1T B540C BAV19WS DI-37 SL44 design of line frequency inductor and transformer
Untitled Abstract: No abstract text available Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP	Original	PDF	G-200, 1-877-GOLDMOS 1301-PTB

sy 170 Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170	OCR Scan	PDF	N4001. sy 170 SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
TFK diodes BYW 76 Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35	OCR Scan	PDF
SBMT2222A Abstract: Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A Text: Summary of types Switching diodes Type BAL 74 VI o in BAL 99 BAR 74 BAR 99 BAS 16 BAS 19 BAS 20 BAS 21 BAS 28 Dual BAS 78 A BAS 78 B BAS 78 C BAS 78 D BAS 79 A (Dual) BAS 79 B (Dual) BAS 79 C (Dual) BAS 79 D (Dual) BAS 116 BAV 70 (Dual) BAV 74 (Dual) BAV 99 (Dual)	OCR Scan	PDF	100ic OT-143 OT-143 KTY13B OT-23 OT-23 KSY13 SBMT2222A Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A
LDR 03 Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12 Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren	OCR Scan	PDF
BAV70 Abstract: BAV74 BAV99 BAW56 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3 Text: SOT-23 TA B LE 5 - SILICO N PLANAR HIGH SP EED SW ITCHIN G DIODES Devices in th is table are suitable for high-speed sw itch in g and high frequency applications. Ratings and Characteristics at 25 °C ambient temperature. Description Type BAV70 BAV 74 BAV99	OCR Scan	PDF	OT-23 100fl, BAV70 BAV74 BAV99 BAW56 100mA tempe10 BZX84-C11 BZX84-C12 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3
LR4802 Abstract: LR4087 alarm SL DIALER LR3441 Diode SY 356 lh5045 LR3463 LH5006A LR48232 LCD CHARACTER CODE LH5003 Text: Product Lineup Product Lineup • Gate Arrays/Standard Cells 1 Gate Arrays P ro cess S eries LZ93 LZ95 CMOS F eatu re G ates High speed D esign rule Delay time Supply voltage O utput current V(TYP.) mA(MAX.) Page 300-5000 1.6 ,«m ns/gate * 1.7 5 4 41 300-10000	OCR Scan	PDF	32kHz 22DIP LH5040 LH5041 LH5045 LH5047 LH5048 28DIP LR4802 LR4087 alarm SL DIALER LR3441 Diode SY 356 LR3463 LH5006A LR48232 LCD CHARACTER CODE LH5003
2N2369 SOT-23 Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A Text: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast	OCR Scan	PDF	BAW63 BZX88-C10 BZX88-C11 BZX88-C12 BZX88-C13 BZX88-C15 BZX88-C16 BZX88-C18 BZX88-C20 BZX88-C22 2N2369 SOT-23 BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
diode marking w8 Abstract: diode a7 Diode Marking z3 SOT-23 DIODE marking W4 38 Diode BAW 62 marking A7 diode baw 92 BAW 62 SOT23 diode marking e8 diode marking a4 Text: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast	OCR Scan	PDF	BAW63 BZX84 FMMD3102 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 ZC830 BZX84-C4V3 ZC830A diode marking w8 diode a7 Diode Marking z3 SOT-23 DIODE marking W4 38 Diode BAW 62 marking A7 diode baw 92 BAW 62 SOT23 diode marking e8 diode marking a4
ZPD 5.1 ITT Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers	OCR Scan	PDF	F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
RPY 86 Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1 Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ	OCR Scan	PDF

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BAV 24 DIODE Search Results

BAV 24 DIODE Result Highlights (5)

BAV 24 DIODE Datasheets Context Search

mkp1830

S4 78a DIODE schottky

2907A PNP bipolar transistors

Untitled

transistors BC 543

PEF 24628

2907A PNP bipolar transistors

BCM 4336

Untitled

Infineon technology roadmap for mosfet

e20231

E20124

si4800

Untitled

sy 170

TFK diodes BYW 76

SBMT2222A

LDR 03

BAV70

LR4802

2N2369 SOT-23

diode marking w8

ZPD 5.1 ITT

RPY 86