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    BARE DIE MOSFET 1200 Search Results

    BARE DIE MOSFET 1200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    BARE DIE MOSFET 1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DMOSFET

    Abstract: CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC CPMF-1200-S160B Cree SiC MOSFET SiC POWER MOSFET
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Gate


    Original     		PDF CPMF-1200-S160B CPMF-1200-S160B DMOSFET CMF10120 CMF10120D bare Die mosfet 3E27 C2D10120D DMOS SiC Cree SiC MOSFET SiC POWER MOSFET

    CPMF-1200-S080B

    Abstract: DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		PDF CPMF-1200-S080B CPMF-1200-S080B DMOSFET bare Die mosfet CMF20120D C2D10120D S080b MOSFET 800V 10A gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v Cree SiC diode die

    bare Die mosfet

    Abstract: DMOSFET CMF20120 CPMF-1200-S080B ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit
    Text: CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • VDS RDS on = 80 mΩ = 90.8 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G


    Original     		PDF CPMF-1200-S080B CPMF-1200-S080B bare Die mosfet DMOSFET CMF20120 ferroxcube 3e27 C2D10120D DMOS SiC gate drive pulse transformer Gate Drive Characteristics Requirements diode schottky 1000V 10a transformer mosfet gate drive circuit

    Untitled

    Abstract: No abstract text available
    Text: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		PDF S2305 450mW R1102B

    Untitled

    Abstract: No abstract text available
    Text: S2301 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 80mW ID 40A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		PDF S2301 R1102B

    CPMF-1200-S160B

    Abstract: DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D
    Text: CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features • • • • • • = 1200 V RDS on Qg = 160 mΩ = 47 nC Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive


    Original     		PDF CPMF-1200-S160B CPMF-1200-S160B DMOSFET bare Die mosfet Cree SiC diode die mosfet 10a 800v gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 800V 10A D-MOSFET diode schottky 1000V 10a C2D10120D

    Untitled

    Abstract: No abstract text available
    Text: S2306 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 160mW ID 22A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		PDF S2306 160mW R1102B

    Untitled

    Abstract: No abstract text available
    Text: S2308 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 280mW ID 14A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		PDF S2308 280mW R1102B

    Untitled

    Abstract: No abstract text available
    Text: S2206 Data Sheet N-channel SiC power MOSFET bare die VDSS 650V RDS on (Typ.) 120mW ID 29A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		PDF S2206 120mW R1102B

    Untitled

    Abstract: No abstract text available
    Text: Standard Products RAD7214-NCx Power MOSFET Die Data Sheet September, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  250Vbreakdown voltage  2.5 A current rating  1.2RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		PDF RAD7214-NCx 250Vbreakdown -55oC 125oC MIL-STD750

    Untitled

    Abstract: No abstract text available
    Text: Standard Products RAD7214-NCx Power MOSFET Die Data Sheet April, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  250Vbreakdown voltage  2.5 A current rating  1.2RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		PDF RAD7214-NCx 250Vbreakdown -55oC 125oC MIL-STD750

    250VB

    Abstract: No abstract text available
    Text: Standard Products RAD7214-NCx Power MOSFET Die Data Sheet January, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  250Vbreakdown voltage  2.5 A current rating  1.2RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are now available in die, seven standard package options and custom


    Original     		PDF RAD7214-NCx 250Vbreakdown -55oC 125oC MIL-STD750 250VB

    Untitled

    Abstract: No abstract text available
    Text: 3N165 P-CHANNEL MOSFET The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAXIMUM RATINGS1@ 25°C unless otherwise noted Maximum Temperatures The hermetically sealed TO-78 package is well suited


    Original     		PDF 3N165 3N165 300mW

    Untitled

    Abstract: No abstract text available
    Text: LS3N166 P-CHANNEL MOSFET The LS3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL LS3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C unless otherwise noted Maximum Temperatures The hermetically sealed TO-78 package is well suited


    Original     		PDF LS3N166 LS3N166 300mW

    intersil dual p-channel mosfet to-78

    Abstract: No abstract text available
    Text: LS3N165 P-CHANNEL MOSFET The LS3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL LS3N165 ABSOLUTE MAXIMUM RATINGS1@ 25°C unless otherwise noted Maximum Temperatures The hermetically sealed TO-78 package is well suited


    Original     		PDF LS3N165 LS3N165 300mW intersil dual p-channel mosfet to-78

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		PDF 3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor

    mosfet base induction heat circuit

    Abstract: mitsubishi sic MOSFET power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi igbt induction heating generator Cree SiC MOSFET SiC BJT zvs zcs induction heating igbt Heatsink For stud devices - Semikron
    Text: High Heat Flux Applications in Power Electronics Scott G. Leslie Chief Technologist Powerex Inc Youngwood PA High Heat Flux Applications in Power Electronics 2005 1 Power Switching Capacity VA Power Semiconductor Device Power Switching Capacity & Application Map


    Original     		PDF

    CJ950

    Abstract: CJ125 Cj135 CJ950 bosch CY146 SMI540 CY141 CJ841 cj840 CJ911
    Text: Automotive Electronics Semiconductors and sensors Product overview 2011 Spring 2011 edition safe clean & economical 2 | Semiconductors and sensors Components for vehicle electronics Bosch Automotive Electronics AE – headquartered in Reutlingen, The division Automotive Electronics is the


    Original     		PDF 125th 150th CJ950 CJ125 Cj135 CJ950 bosch CY146 SMI540 CY141 CJ841 cj840 CJ911

    TLF35584

    Abstract: TC27x TLE9180 TC275T AURIX TC277T TC29x TLE8000 Tc264 BGT24ATR12
    Text: Highly Integrated and Performance Optimized 32-bit Microcontrollers for Automotive and Industrial Applications www.infineon.com/TriCore 2 Contents TriCore Family Concept 04 TriCore™ Based Product Roadmap 06 PRO-SIL™ Safety Concept 07 TriCore™ for Powertrain Applications


    Original     		PDF 32-bit 32-ents TLF35584 TC27x TLE9180 TC275T AURIX TC277T TC29x TLE8000 Tc264 BGT24ATR12

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    2SK170BL

    Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
    Text: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual


    Original     		PDF BF1107/8 BGA2715-17 BGA6x89 2SK170BL 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual

    3S16

    Abstract: MC2042-3DIE MC2042-3DIEW QSOP16 SOIC16 MOSFET 4407 3806 SOIC16
    Text: LED/Laser Driver for FDDI, Fast Ethernet, Fibre Channel, OC3/STM-1, IEEE1394 Data Sheet 02042-DSH-002-A 8/03 Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed Technologies , Inc, Proprietary and Confidential


    Original     		PDF IEEE1394 02042-DSH-002-A MC2042-3 3S16 MC2042-3DIE MC2042-3DIEW QSOP16 SOIC16 MOSFET 4407 3806 SOIC16

    MOSFET 4407

    Abstract: lse 1006 MC2042-3DIE MC2042-3DIEW MC2042-3Q16 MC2042-3T20 QSOP16 max 8724 CIRCUIT diagram pin diagram of ic 7494
    Text: LED/Laser Driver for FDDI, Fast Ethernet, Fibre Channel, OC3/STM-1, IEEE1394 Data Sheet 02042-DSH-002-B 2/04 Information provided in this Data Sheet is PRELIMINARY and is subject to change without notice. Mindspeed Technologies , Inc, Proprietary and Confidential


    Original     		PDF IEEE1394 02042-DSH-002-B MC2042-3 MOSFET 4407 lse 1006 MC2042-3DIE MC2042-3DIEW MC2042-3Q16 MC2042-3T20 QSOP16 max 8724 CIRCUIT diagram pin diagram of ic 7494

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF