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    BAR81 Search Results

    BAR81 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    SiT8944BAR81-33NA15.360000 SiTime 1 to 110 MHz, Extended Temperature (-55 °C to 125 °C) Oscillator Datasheet
    SiT8924BAR81-33N-15.360000 SiTime 1 to 110 MHz, Wide Temperature AEC-Q100 Oscillator (-55 to +125°C) Datasheet
    SiT8918BAR81-33N-15.360000 SiTime 1 to 110 MHz, High Temperature Oscillator (-40 to +125°C) Datasheet
    SF Impression Pixel

    BAR81 Price and Stock

    Infineon Technologies AG BAR81WH6327XTSA1

    DIODE STANDAR 30V 100MW SOT343-4
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    DigiKey BAR81WH6327XTSA1 Reel 9,000 3,000
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    BAR81WH6327XTSA1 Cut Tape 3,530 1
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    BAR81WH6327XTSA1 Digi-Reel 1
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    Verical BAR81WH6327XTSA1 258,000 6,000
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    BAR81WH6327XTSA1 6,000 122
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    BAR81WH6327XTSA1 1,880 28
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    Arrow Electronics BAR81WH6327XTSA1 Cut Strips 1,880 8 Weeks 1
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    BAR81WH6327XTSA1 187 1
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    Rochester Electronics BAR81WH6327XTSA1 132 1
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    TME BAR81WH6327XTSA1 960 1
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    Chip1Stop BAR81WH6327XTSA1 Cut Tape 6,000
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    BAR81WH6327XTSA1 1,880
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    BAR81WH6327XTSA1 187
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    EBV Elektronik BAR81WH6327XTSA1 7 Weeks 3,000
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    New Advantage Corporation BAR81WH6327XTSA1 6,000 1
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    Rochester Electronics LLC BAR81WE6327

    PIN DIODE
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    DigiKey BAR81WE6327 Bulk 3,000 1,888
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    Tripp Lite IBAR8-15RM

    SURGE SUPP 8OUT 12'CORD W/REMOTE
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    DigiKey IBAR8-15RM Bulk 39 1
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    Avnet Americas IBAR8-15RM Bulk 8 Weeks 12
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    Mouser Electronics IBAR8-15RM
    • 1 $122.97
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    Master Electronics IBAR8-15RM 1
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    Neutron USA IBAR8-15RM 50
    • 1 $134.99
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    Infineon Technologies AG BAR81WE6327BTSA1

    DIODE STANDAR 30V 100MW SOT343-4
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    DigiKey BAR81WE6327BTSA1 Digi-Reel 1
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    BAR81WE6327BTSA1 Reel 6,000
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    BAR81WE6327BTSA1 Cut Tape 1
    • 1 $0.66
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    SiTime Corporation SIT8944BAR81-33NA15.360000

    MEMS OSC XO 15.360000MHZ LVCMOS
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    DigiKey SIT8944BAR81-33NA15.360000 10
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    BAR81 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BAR81 Infineon Technologies RF switching diode for use in shunt configuration Original PDF
    BAR81 Kexin Silicon RF Switching Diode Original PDF
    BAR81 Siemens Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) Original PDF
    BAR81 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BAR81 TY Semiconductor Silicon RF Switching Diode - SOT-143 Original PDF
    BAR81W Infineon Technologies RF switching diode for use in shunt configuration Original PDF
    BAR81W Infineon Technologies DIODE SWITCHING 30V 0.1A 4SOT343 Original PDF
    BAR81W Infineon Technologies Antenna Switch; Package: PG-SOT343-4; IF (max): 100.0 mA; CT (max): 1.0 pF; rF (typ): 0.7 Ohm; Trr (typ): 80.0 ns; Configuration: Single; Original PDF
    BAR81W Kexin Silicon RF Switching Diode Original PDF
    BAR81W Siemens Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) Original PDF
    BAR81W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BAR81W TY Semiconductor Silicon RF Switching Diode - SOT-343 Original PDF
    BAR81WE6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE RF SGL 30V 100MA SOT-343 Original PDF
    BAR81WE6327BTSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE RF SGL 30V 100MA SOT-343 Original PDF
    BAR81WH6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE RF SW 30V 100MA SOT343 Original PDF
    BAR81WH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE RF SW 30V 100MA SOT343 Original PDF

    BAR81 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BAR81. Silicon RF Switching Diode  Designed for use in shunt configuration in high performance RF switches  High shunt signal isolation  Low shunt insertion loss  Optimized for short - open transformation using  lines BAR81W 4 3 1 2 Type BAR81W Package


    Original
    PDF BAR81. BAR81W OT343

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAR81W SOT-343 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 30 V IF 100 mA P tot 100 mW Diode reverse voltage


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    PDF BAR81W OT-343

    BAR81W

    Abstract: No abstract text available
    Text: BAR81W Silicon RF Switching Diode 3  Design for use in shunt configuration 4  High shunt signal isolation  Low shunt insertion loss 2 1 Type Marking BAR81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT343 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original
    PDF BAR81W VPS05605 OT343 App10 Jul-06-2001 100MHz BAR81W

    marking bbs

    Abstract: No abstract text available
    Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free RoHS compliant package


    Original
    PDF BAR81. BAR81W OT343 marking bbs

    bbs 2002

    Abstract: BAR81 BAR81W marking 015
    Text: BAR81. Silicon RF Switching Diode  Designed for use in shunt configuration in high performance RF switches  High shunt signal isolation  Low shunt insertion loss  Optimized for short - open transformation using  lines BAR81W 4 3 1 2 Type BAR81W Package


    Original
    PDF BAR81. BAR81W OT343 Dec-20-2002 bbs 2002 BAR81 BAR81W marking 015

    BAR81

    Abstract: BAR81W BGA420
    Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free RoHS compliant package 1)


    Original
    PDF BAR81. BAR81W OT343 BAR81 BAR81W BGA420

    Untitled

    Abstract: No abstract text available
    Text: BAR81. Silicon RF Switching Diode  Designed for use in shunt configuration in high performance RF switches  High shunt signal isolation  Low shunt insertion loss  Optimized for short - open transformation using  lines BAR81W 4 3 1 2 Type BAR81W Package


    Original
    PDF BAR81. BAR81W OT343

    Untitled

    Abstract: No abstract text available
    Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " !  Type BAR81W


    Original
    PDF BAR81. BAR81W OT343

    Untitled

    Abstract: No abstract text available
    Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " !  Type BAR81W


    Original
    PDF BAR81. BAR81W OT343 15mponents

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAR81 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss A bsolute M axim um R atings T a = 25 S ym bol V alue U nit D iode revers e voltage P aram eter VR 30 V F orw ard c urrent


    Original
    PDF BAR81

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type Silicon RF Switching Diodes BAR81 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss A bsolute M axim um R atings T a = 25 S ym bol V alue U nit D iode revers e voltage P aram eter VR


    Original
    PDF BAR81

    Untitled

    Abstract: No abstract text available
    Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free RoHS compliant package


    Original
    PDF BAR81. BAR81W OT343

    Untitled

    Abstract: No abstract text available
    Text: BAR81. Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines BAR81W " !  Type BAR81W


    Original
    PDF BAR81. BAR81W OT343

    marking BBs

    Abstract: BAR81 VSO05553
    Text: BAR81 Silicon RF Switching Diodes 3  Design for use in shunt configuration 4  High shunt signal isolation  Low shunt insertion loss 2 1 VSO05553 Type Marking BAR81 BBs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage


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    PDF BAR81 VSO05553 Aug-21-2001 marking BBs BAR81 VSO05553

    dcf77

    Abstract: BAR988HG-T barometer MSF-60 BAR933HG DCF-77 BAR816HG barometer sensor BAR826 BAR916
    Text: BAR816HG Trådlös väderstation Full väderinformation för bättre dagsplanering Lättare att förutse dagen när man känner väderprognosen. Denna station visar väderprognosen med lättlästa ikoner och informerar också om inom/utomhustemperatur och luftfuktighet. En komplett väderstation, som också visar


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    PDF BAR816HG BAR933HG BAR988HG-T BAR989HG-T dcf77 BAR988HG-T barometer MSF-60 BAR933HG DCF-77 barometer sensor BAR826 BAR916

    harmonic 4000 hl

    Abstract: BAR65-03W Lambda diode harmonic HL 4000 AN013 BAR65 BAR80 BAR81 microstripline
    Text: A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 3 8 0 0 - 1 0 0 0 M H z P I N - D i o d e T r an s m i t - R ec e i v e Switch R F & P r o t e c ti o n D e v i c e s Edition 2006-10-20 Published by Infineon Technologies AG


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    PDF 04-DEC-96 \schaffer\proj96\gsm sw01\gsm harmonic 4000 hl BAR65-03W Lambda diode harmonic HL 4000 AN013 BAR65 BAR80 BAR81 microstripline

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    FR4 substrate antenna

    Abstract: BAR63-02W BAR63 BAR81W SCD80 siemens diodes DECT siemens 140FF
    Text: Application Note No. 049 Discrete & RF Semiconductors DECT Transmit - Receive Switch Using Ultra Small PIN Diodes This application note covers a redesign of a PIN diode switch introduced in application note number 007. It uses Diodes in SCD80 and SOT343 package,


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    PDF SCD80 OT343 BAR63 BAR81W 150pF 89GHz FR4 substrate antenna BAR63-02W BAR63 BAR81W siemens diodes DECT siemens 140FF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original
    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original
    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101