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    BAE 86 Search Results

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    BAE 86 Price and Stock

    SEI Stackpole Electronics Inc RNF14BAE866R

    RES 866 OHM 0.1% 1/4W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RNF14BAE866R Ammo Pack 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.18134
    		Buy Now

    SEI Stackpole Electronics Inc RNF14BAE86K6

    RES 86.6K OHM 0.1% 1/4W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RNF14BAE86K6 Ammo Pack 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.18134
    		Buy Now

    Microchip Technology Inc USB2512B-AEZG

    USB Interface IC USB2.0 HIGH SPEED HUB CONTROLLER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics USB2512B-AEZG 44,194
    • 1 $2.13
    • 10 $2.13
    • 100 $1.76
    • 1000 $1.75
    • 10000 $1.75
    		Buy Now

    Microchip Technology Inc USB2513B-AEZC-TR

    USB Interface IC USB 2.0 HIGH SPEED 3 PORT HUB CNTLR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics USB2513B-AEZC-TR 24,094
    • 1 $2.81
    • 10 $2.81
    • 100 $2.39
    • 1000 $2.39
    • 10000 $2.36
    		Buy Now

    Microchip Technology Inc USB2514B-AEZC-TR

    USB Interface IC USB 2.0 HIGH SPEED 4 PORT HUB CONTRL.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics USB2514B-AEZC-TR 21,902
    • 1 $3.25
    • 10 $3.25
    • 100 $2.45
    • 1000 $2.45
    • 10000 $2.45
    		Buy Now
    Find more BAE 86 price and stock on Findchips.com

    BAE 86 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OSD 9616

    Abstract: Remocon 558 ic HS 2272 bpl TV vERTICAL SECTION CIRCUIT DIAGRAM TB 1226 EN HYNIX 512 Mbit 10069 14069 U EIA-608 HMS81C4260
    Text: HYNIX SEMICONDUCTOR INC. 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS81C4x60 User’s Manual Ver. 1.1 Version 1.1 Published by MCU Application Team Heung-il Bae(hibae@hynix.com), Byoung-jin Lim( bjinlim@hynix.com) 2001 Hynix Semiconductor Inc. All rights reserved.


    Original     		PDF HMS81C4x60 OSD 9616 Remocon 558 ic HS 2272 bpl TV vERTICAL SECTION CIRCUIT DIAGRAM TB 1226 EN HYNIX 512 Mbit 10069 14069 U EIA-608 HMS81C4260

    JN1123

    Abstract: Radiall connector Radiall Crimp 02 MIL-C-83527 radiall connector, receptacle MIL-C-83527 contacts
    Text: TCX* SERIES - BAE JN1123 Connector for use on the Eurofighter / Typhoon Aircraft - Designed for L-shaped boxes. - 5 shell sizes with environmental sealing and metal to metal bottoming. - Field replaceable inserts. - Ground spring on the plug shell providing


    Original     		PDF JN1123 JN1123 MIL-C-83527 Radiall connector Radiall Crimp 02 radiall connector, receptacle MIL-C-83527 contacts

    rad750 user manual bae

    Abstract: bae rad750 RAD750 RAD750 processor 234A524 RAD750 3U single board computer IEC-1076-4-101 RAD750 software reference manual wedgelock mil-b-5087
    Text: RAD750• Board Hardware Specification Document Number 234A524 Release Date August 1, 2000 Copyright by BAE SYSTEMS All Rights Reserved Document Number: 234A524 RAD750 CompactPCI Hardware Specification Notices Before using this information and the product it supports, be sure to read the general information on the


    Original     		PDF RAD750 234A524 RAD750 rad750 user manual bae bae rad750 RAD750 processor 234A524 RAD750 3U single board computer IEC-1076-4-101 RAD750 software reference manual wedgelock mil-b-5087

    Untitled

    Abstract: No abstract text available
    Text: DC-DC Converter Bricks, Open/Enclosed BAE SERIES, 1/8 BRICK, UP TO 150W FEATURES: 5 year warranty Output current up to 30A 1500Vdc isolation voltage Efficiency up to 93% Operating temperature range -40 ℃ to +85 ℃ Under voltage, over current, short circuit,


    Original     		PDF 1500Vdc BAE48-12V25 BAE48-18V20 BAE48-18V25 BAE48-25V25 BAE48-25V30 BAE48-33V10 BAE48-33V15

    nas620

    Abstract: RAD750 Uralane 5753 Uralane 5750 RAD750 processor RAD6000 bae rad750 rad750 user manual bae RAD750 software reference manual Calmark
    Text: RAD750 Board Hardware User's Manual Document Number 234A533 Release Date December 20, 2000 Copyright by BAE SYSTEMS All Rights Reserved Document #: 234A533 RAD750 3U CompactPCI Hardware Users Manual Notices Before using this information and the product it supports, be sure to read the general information on the


    Original     		PDF RAD750TM 234A533 RAD750 RAD750 nas620 Uralane 5753 Uralane 5750 RAD750 processor RAD6000 bae rad750 rad750 user manual bae RAD750 software reference manual Calmark

    bd 8h

    Abstract: No abstract text available
    Text:  %  ! %  "%&$!"#D # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY 9I  K S 4EFEI<F6;<A: ' ) -  . 9BD- ' * - ' 9I"^]#$\Pf   \" S ) CF<@ <L87 F86;AB?B: K 9BDABF85BB>     6BAH8DF8DE $9 /+ 6 S + G4?<9<87 466BD7<A: FB $     9BDF4D: 8F4CC?<64F<BAE


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    bd 8h

    Abstract: 8H68 8A98 8d-8d 6GDG
    Text:  %   ! %  "%&$!"#D # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY S 4EFEI<F6;<A: ' -  . 9BD- ' * S ) CF<@ <L87 F86;AB?B: K 9BDABF85BB>     6BAH8DF8DE S + G4?<9<87 466BD7<A: FB $     ) ) 9I  K ' 9I"^]#$\Pf   \" $9 1- 6 9BDF4D: 8F4CC?<64F<BAE


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    78H68

    Abstract: d879 879D
    Text: Jg_T $   "  "%&$!"#E  $ ;B 1='=-: >5>?;= $ =;0@/?& @9 9 -=D 6MI[\YMZ S 4EFEI<F6;<A: ' -  . 9BD- ' * S ) CF<@ <L87 F86;AB?B: K 9BD    6BAH8DF8DE S + G4?<9<87 466BD7<A: FB $     )#  ) 9I , K '  - BA@ 4J )&- \" $9 )*( 6 9BDF4D: 8F4CC?<64F<BAE


    Original     		PDF 466BD 78H68 d879 879D

    AFBA

    Abstract: No abstract text available
    Text: Jg_T $ "  ฀ E฀$;B1='=-:>5>?;= $=;0@/?฀&@99-=D 6MI[\YMZ S฀ 4EF฀EI<F6;<A:฀' - .฀9BD฀-'*S฀)CF<@<L87฀F86;AB?B:K฀9BD฀ ฀6BAH8DF8DE ) 9I , K ' -BA@4J฀ )&- \ $9 )*( 6


    Original     		PDF EF4A68à D4F87 AFBA

    BAE Systems

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML
    Text: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 209A542 1x106 1x1014 1x109 1x10-11 40-Lead AS9000, BAE Systems AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML

    197A807

    Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		PDF 197A807 2x105 1x1012 5962R96891 28-Lead 28C256 AT28C256. AS9000, 197A807 BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4

    transistor B885

    Abstract: 209A542 AEFJANTXV1N4100-1-BAE/TR/BAE LM136A-2.5QML
    Text: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 209A542 40-Lead 1x106 1x1014 1x109 1x10-11 AS9000, transistor B885 209A542 AEFJANTXV1N4100-1-BAE/TR/BAE LM136A-2.5QML

    203A665

    Abstract: J122 SMD TRANSISTOR 314 j122
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 203A665 1x106 1x1014 1x109 1x10-11 1x1012 5962H98615 40-Lead AS9000, 203A665 J122 SMD TRANSISTOR 314 j122

    Untitled

    Abstract: No abstract text available
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 203A665 5962H98615 40-Lead 1x106 1x1014 1x109 1x10-11 1x1012 AS9000, x5040)

    S4 46

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 225A833 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, S4 46 AEFJANTXV1N4100-1-BAE/TR/BAE 225A833

    A1760

    Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 238A792 64-Lead 1x106 1x1014 1x109 1x10-11 AS9000, A1760 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE

    prom 238A790

    Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		PDF 238A790 2x105 1x1012 28-Lead 28C256 AT28C256. AS9000, prom 238A790 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite BAE Systems

    prom 238A790

    Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free


    Original     		PDF 238A790 28-Lead 2x105 1x1012 28C256 AT28C256. AS9000, x5040) prom 238A790 AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE

    transistor B885

    Abstract: 201A072 225A837 B885
    Text: 201A072 225A837 256K x 8 Radiation Hardened Static RAM MCM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 201A072 225A837 1x106 1x1014 1x109 1x10-11 1x1012 5962H99541 40-Lead AS9000, transistor B885 201A072 225A837 B885

    Untitled

    Abstract: No abstract text available
    Text: 212A625 512K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with RHCMOS5XL 0.35 µm Process for Strategic rad hard or R25 0.25 µm Commercial process for rad hard • Radiation Hardened Total Dose hardness through


    Original     		PDF 212A625 40-Lead 1x106 100Krads 1x1014 1x109 AS9000, x5040)

    238A792

    Abstract: No abstract text available
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 238A792 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, 238A792

    EZ 729

    Abstract: H944 SO45 OEE19415 OEE194152915 77ZA EZ 642 DI 944 63gp
    Text: =;4203 0/1 8DJEF6? 86A =:D@:F>86?J E:6?:9 D; D:?6J ;OKZ[XOY * AheWZXWdZ * Iem _di[hj_ed beii0^_]^ _iebWj_ed * G_]^ WcX_[dj Wffb_YWX_b_jo * @bb c[jWb m[bZ[Z YedijhkYj_ed * G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h 6@7>:AF 696CF67>?>FJ _ @cX_[dj ]hWZ[ @cX_[dj j[cf[hWjkh[


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    TB 2929 H

    Abstract: i486sx 82424TX LT3112 i486sx intel idt 256kb cache intel 486 dx 33mhz P6135
    Text: INTEGRATED DE VI CE baE • 4 3 5 5 77 1 D O m S b n 128KB/256KB/512KB SECONDARY CACHE MODULES FOR THE INTEL* i486 CPU/82420TX PCI SET Sib ■ PRELIMINARY IDT7MP6133 Id™ ! « ¡SESSIS IDT7MP6153 FEATURES DESCRIPTION • 128KB/256KB/512KB secondary cache m odule family


    OCR Scan     		PDF IDT7MP6133 128KB/256KB/512KB i486TM CPU/82420TX 82420TX 33MHz 128MB CELP2X56SC3Z48 82424TX TB 2929 H i486sx LT3112 i486sx intel idt 256kb cache intel 486 dx 33mhz P6135

    mp6119

    Abstract: No abstract text available
    Text: INTEGRATE» DEVICE baE D • 4A5S771 00145144 373 M IDT 128KB/256KB SECONDARY CACHE MODULE FOR THE INTEL i486 Integrated Device Technology, Inc. ADVANCE INFORMATION IDT7MP6118 IDT7MP6119 FEATURES DESCRIPTION • 12 8K B /2 56K B d ire ct m a pped , n o n-sectored , ze ro -w a itsta te se co n d a ry cach e m o dule


    OCR Scan     		PDF 4A5S771 IDT7MP6118 IDT7MP6119 128KB/256KB i486TM 486-based T71589 i4861 7MP6118 IDT7MP6118/19 mp6119