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    BA779S Search Results

    BA779S Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA779S Kexin Silicon PIN Diode Original PDF
    BA779S RFE International Rectifier Diode, Switching Diode, Single, 30 MinV, SOT-23, 3-Pin Original PDF
    BA779S TY Semiconductor Silicon PIN Diode - SOT-23 Original PDF
    BA779S Vishay Telefunken Silicon PIN Diodes Original PDF
    BA779S Vishay Telefunken DIODE PIN ATTENUATOR 30V 3SOT-23 Original PDF
    BA779S Jinan Gude Electronic Device Surface mount switching diode. Scan PDF
    BA779S Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA779S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA779S-GS08 Vishay Intertechnology RF PIN Diode Original PDF
    BA779S-GS08 Vishay Telefunken DIODE PIN ATTENUATOR 30V 3SOT-23 T/R Original PDF
    BA779S-GS18 Vishay Telefunken DIODE PIN ATTENUATOR 30V 3SOT-23 T/R Original PDF

    BA779S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification BA779;BA779S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Wide frequency range 10 MHz to 1 GHz 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		BA779 BA779S OT-23 BA799 BA799S PDF

    BA779

    Abstract: BA779S
    Text: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ


    Original     		BA779 BA779S BA779 BA779S 13-Feb-01 D-74025 PDF

    BA779

    Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
    Text: BA779 / BA779S VISHAY Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.1 mg


    Original     		BA779 BA779S OT-23 OT-23 BA779 BA779-GS18 BA779-GS08 BA779S-GS18 BA779S-GS08 BA779-GS08 BA779S BA779S-GS08 PDF

    BA779

    Abstract: BA779S
    Text: BA779.BA779S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature


    Original     		BA779 BA779S 50mmx50mmx1 D-74025 01-Apr-99 BA779S PDF

    BA779

    Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
    Text: BA779 / BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications Current controlled HF resistance in adjustable


    Original     		BA779 BA779S OT-23 2002/95/EC 2002/96/EC OT-23 BA779 BA779-GS18 BA779-GS08 BA779-GS08 BA779S BA779S-GS08 BA779S-GS18 PDF

    BA779

    Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
    Text: BA779/BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications • Current controlled HF resistance in adjustable


    Original     		BA779/BA779S 2002/95/EC 2002/96/EC GS18/10 GS08/3 BA779 BA779-GS18 BA779-GS08 BA779S BA779S-GS18 BA779 BA779-GS08 BA779S BA779S-GS08 PDF

    BA779

    Abstract: BA779S
    Text: BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current


    Original     		BA779 BA779S 50mmx50mmx1 D-74025 BA779S PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ


    Original     		BA779 BA779S BA779 BA779â BA779Sâ 13-Feb-01 D-74025 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779/BA779S VISHAY Vishay Semiconductors RF PIN Diodes Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8 mg


    Original     		BA779/BA779S OT-23 BA779 BA779S BA779-GS18 BA779-GS08 BA779S-GS18 BA779S-GS08 D-74025 24-Feb-04 PDF

    BA779

    Abstract: BA779S
    Text: BA779.BA779S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ


    Original     		BA779 BA779S BA779 BA779S 13-Feb-01 D-74025 PDF

    8550 sot-23

    Abstract: BA779 BA779S
    Text: BA779.BA779S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature


    Original     		BA779 BA779S 50mmx50mmx1 D-74025 12-Dec-94 8550 sot-23 BA779S PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779 / BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications Current controlled HF resistance in adjustable


    Original     		BA779 BA779S OT-23 2002/95/EC 2002/96/EC OT-23 BA779S BA779-GS18 BA779-GS08 PDF

    zr smd

    Abstract: transistor smd ZR BA779 BA779S BA799 0/transistor smd ZR 55
    Text: Diodes SMD Type Silicon PIN Diodes BA779;BA779S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Wide frequency range 10 MHz to 1 GHz 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		BA779 BA779S OT-23 BA799 BA799S zr smd transistor smd ZR BA779S BA799 0/transistor smd ZR 55 PDF

    BA779-GS08

    Abstract: BA779 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
    Text: BA779/BA779S Vishay Semiconductors RF PIN Diodes - Single in SOT23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 16923 Applications • Current controlled HF resistance in adjustable


    Original     		BA779/BA779S 2002/95/EC 2002/96/EC GS18/10 GS08/3 BA779 BA779-GS18 BA779-GS08 BA779S BA779S-GS18 BA779-GS08 BA779 BA779S BA779S-GS08 PDF

    5d surface mount diode

    Abstract: JS29 bas16 cross reference DL4148 DL4148 package MMBD1702 RFE International BAS21 DL4448 LL4148
    Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package


    Original     		OT-23 LL4148 DL4148 500mW DL4448 LL4448 OT-23 C3B01 5d surface mount diode JS29 bas16 cross reference DL4148 DL4148 package MMBD1702 RFE International BAS21 DL4448 LL4148 PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 PDF

    LL4148 melf

    Abstract: DIODE SOT-23 PACKAGE JS29 bas16 cross reference DL4148 BAS21 DL4448 LL4148 LL4448 MMBD1402
    Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package


    Original     		OT-23 LL4148 DL4148 500mW DL4448 LL4448 OT-23 C3B01 LL4148 melf DIODE SOT-23 PACKAGE JS29 bas16 cross reference DL4148 BAS21 DL4448 LL4148 LL4448 MMBD1402 PDF

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 PDF

    1N4148.1N4448

    Abstract: BYV37-BYV38 byg20
    Text: Temic Semiconductors Selector Guide - Alphanumeric Index 1N4148.1N4448 1N4150 1N4151 1N4154 1N4728A.1N4761A 1N5221B.1N5267B 1N5417.1N5418 BA1282.BA1283 BA282.BA283 BA479G.BA479S BA604 BA679.BA679S BA682.BA683 BA779.BA779S BA779 - 2 BA979.BA979S BA982.BA983


    OCR Scan     		1N4148 1N4448 1N4150 1N4151 1N4154 1N4728A. 1N4761A 1N5221B. 1N5267B 1N5417 1N4148.1N4448 BYV37-BYV38 byg20 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779.BA779S V ï|P A f Vishay Telefu nken ▼ Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance In adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current


    OCR Scan     		BA779 BA779S 50mmx50mmx1 D-74025 24-Jun-98 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779.BA779S_ v is h a y Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter


    OCR Scan     		BA779 BA779S_ 50mmx50mmx1 01-Apr-99 BA779S OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic BA779.BA779S S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Test Conditions Parameter Reverse voltage


    OCR Scan     		BA779 BA779S 50mmx50mmxl 12-Dec-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Te m ic BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features • W ide freq u en cy range 10 M H z to 1 G H z Applications Current co n tr o lled H F resistan ce in adjustable attenuators Absolute Maximum Ratings Tj = 2 5 ° C T e st C o n d itio n s


    OCR Scan     		BA779 BA779S PDF

    CQ 734 G

    Abstract: No abstract text available
    Text: BA779.BA779S VtSHAY ▼ Vishay Telefunken Silicon PIN Diodes Features • W id e fre q u e n c y ra n g e 10 M H z to 1 G H z Applications C u rre n t c o n tro lle d a tte n u a to rs HF re s is ta n c e In a d ju s ta b le Absolute Maximum Ratings Tj = 2 5 ° C


    OCR Scan     		BA779 BA779S D-74025 01-Apr-99 CQ 734 G PDF