BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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Original
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA379
BA377
BA339
BA438
BA429
BA416
ba-302
BA512
BA308
ba324
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PDF
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BA512
Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh
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Original
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K8S5615ET
22F8h
22FEh
54MHz
66MHz
270sec
240sec
256Byte
00003FH
00007FH
BA512
ba469
BA516
BA508
BA323
BA340
BA476
BA507
BA312
BA379
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PDF
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BA339
Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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Original
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA339
BA516
BA501
BA379
BA481
ba473
BA450
BA508
ba204
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PDF
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BA339
Abstract: K8C1215ET BA507
Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8C12
512Mb
0110000h-011FFFFh
0100000h-010FFFFh
00F0000h-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
BA339
K8C1215ET
BA507
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PDF
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BA339
Abstract: No abstract text available
Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8C12
512Mb
0110000h-011FFFFh
0100000h-010FFFFh
00F0000h-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
BA339
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PDF
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ba508
Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary
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Original
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K5L5628JT
115-Ball
80x13
ba508
BA311
BA340
BA516
BA512
BA516 diode
BA339
BA379
BA295
ba473
|
PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
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PDF
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RAMB36SDP
Abstract: frame_ecc FIFO36 BA284 XAPP1073 A330 RAMB36E1 read back JESD89A WP332 adiru
Text: Application Note: Virtex-5 and Virtex-6 FPGA Families NSEU Mitigation in Avionics Applications Authors: Ching Hu and Suhail Zain XAPP1073 v1.0 May 17, 2010 Summary Neutron-induced single event upset (NSEU) is a known phenomenon in the memory structures of modern ICs used in terrestrial applications. With current and next-generation aircraft
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Original
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XAPP1073
RAMB36SDP
frame_ecc
FIFO36
BA284
XAPP1073
A330
RAMB36E1 read back
JESD89A
WP332
adiru
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PDF
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BA379
Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8S1215ETC
K8S1215EBC
K8S1215EZC
512Mb
64FBGA,
0150000h-015FFFFh
0140000h-014FFFFh
0130000h-013FFFFh
0120000h-012FFFFh
0110000h-011FFFFh
BA379
BA506
BA438
BA508
BA306
ba473
BA431
BA356
BA471
ba258
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PDF
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BA339
Abstract: ba406 K8F1315ETM
Text: K8F12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8F12
512Mb
inh-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
0090000h-009FFFFh
0080000h-008FFFFh
BA339
ba406
K8F1315ETM
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PDF
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ba508
Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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Original
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K8A5615ET
54MHz
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
ba508
BA516 diode
BA512
BA507
ba358
BA339
BA505
BA459
BA516
BA329
|
PDF
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BA339
Abstract: AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64
Text: K8F12 13 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8F12
512Mb
couldresul0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
0090000h-009FFFFh
0080000h-008FFFFh
0070000h-007FFFFh
BA339
AMD+Athlon+64+X2+pin+diagram
kuhnke+z396.64
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PDF
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transistor A1624
Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
Text: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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Original
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K5N1229ACD-BQ12
512Mb
128Mb
transistor A1624
ba21 transistor
Samsung K5 128MB flash
BA252
BA339
512Mb nor flash memory
K5N1229ACD-BQ12
TBA 1205
K5n12
samsung, K5N
|
PDF
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BA339
Abstract: ba379 BA489
Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8C12
512Mb
0110000h-011FFFFh
0100000h-010FFFFh
00F0000h-00FFFFFh
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
BA339
ba379
BA489
|
PDF
|
|
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K8P2915UQB
Abstract: BA1104 BA20B ba232b 555H BA1-43-BA1-46 samsung nor flash Samsung MCP ba2112 ba1111
Text: K8P2915UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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Original
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K8P2915UQB
128Mb
BA1-13
030000h-037FFFh
BA1-12
028000h-02FFFFh
BA1-11
020000h-027FFFh
BA1-10
018000h-01FFFFh
K8P2915UQB
BA1104
BA20B
ba232b
555H
BA1-43-BA1-46
samsung nor flash
Samsung MCP
ba2112
ba1111
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PDF
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BA339
Abstract: BA407 BA404 BA420
Text: Advance Information FLASH MEMORY K8F12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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Original
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K8F12
512Mb
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
0090000h-009FFFFh
0080000h-008FFFFh
0070000h-007FFFFh
0060000h-006FFFFh
BA339
BA407
BA404
BA420
|
PDF
|
BA425
Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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Original
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA425
BA512
BA507
BA379
BA324
BA377
BA497
BA339
BA413
ba418
|
PDF
|
BB409
Abstract: BF960 BF966 BF963 GP 004 DIODE BB505G LT 5202 diode
Text: SIEMENS/ SPCLt SEHXCONJS 7DC S B 8S3t320 0013823 8 m Discrete Semiconductors For High Frequency Applications t - o i- c / O Siemens is a major supplier of high frequency discrete semiconductors. An extensive line of tuner and band switch diodes, RF, Microwave and Dual
|
OCR Scan
|
8S3t320
/200CM
8-121A
BB409
BF960
BF966
BF963
GP 004 DIODE
BB505G
LT 5202 diode
|
PDF
|
BA389 PIN Diode
Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Text: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure
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OCR Scan
|
BA282
BA284
BA389 PIN Diode
ba389
BA284
V/BA389 PIN Diode
BA389 diode
|
PDF
|
4BB7
Abstract: a699 3843 application note RBL 43 P TRANSISTOR MAB8048 MAB8400 PC10 PC11 PCD33XXA
Text: Product specification Philips Semiconductors 8-bit telecom microcontrollers PCD33XXA Family 1 INTRO D UCTIO N 3 G ENERAL DESCRIPTION This data sheet describes the shared properties of the PCD 33XXA fam ily of m icrocontrollers and its quickly growing num ber of derivative m icrocontrollers. For a
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OCR Scan
|
PCD33XXA
MAB8048)
MBA281
4BB7
a699
3843 application note
RBL 43 P TRANSISTOR
MAB8048
MAB8400
PC10
PC11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Video ICs I NTSC/PAL color signal generator | BU2841AFS/BU2762AL The BU2841AFS and BU2762AL generate color signals and test patterns in NTSC and PAL formats. The generated signal output can be switched between composite and chroma and is compatible with Y/C separation output. A built-in
|
OCR Scan
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BU2841AFS/BU2762AL
BU2841AFS
BU2762AL
ii-BQu-BQ25
16cydes
BU2841
0022hi01
BU2841AFS.
|
PDF
|
PAL PATTERN GENERATOR
Abstract: BU2762AL bu2762 BU2841AFS til 380 aj 312 pal video pattern NTSC test generator BU284 1773447
Text: Video ICs I NTSC/PAL color signal generator | BU2841AFS/BU2762AL The BU2841AFS and BU2762AL generate color signals and test patterns in NTSC and PAL formats. The generated signal output can be switched between composite and chroma and is compatible with Y/C separation output. A built-in
|
OCR Scan
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BU2841AFS/BU2762AL
BU2841AFS
BU2762AL
D022L
BU2841AFS/BU2762AL
BU2841AFS.
ZIP18
PAL PATTERN GENERATOR
bu2762
til 380
aj 312
pal video pattern
NTSC test generator
BU284
1773447
|
PDF
|
bu2762
Abstract: 2841A BU2762AL
Text: Video ICs NTSC/PAL color signal generator BU2841AFS/BU2762AL The BU2841AFS and BU2762AL generate color signals and test patterns in NTSC and PAL formats. The generated signal output can be switched between composite and chroma and is compatible with Y/C separation output. A built-in
|
OCR Scan
|
BU2841AFS/BU2762AL
BU2841AFS
BU2762AL
BU2841AFS.
bu2762
2841A
|
PDF
|
mst 702 lf
Abstract: LA617 mst 702 9398 393 40011
Text: Preliminary specification Philips Semiconductors 8-bit microcontrollers PCF84CXXXA Family 1 INTRODUCTION 3 GENERAL DESCRIPTION This data sheet describes the shared properties of the PCF84CXXXA family of microcontrollers and its quickly growing number of derivative microcontrollers. For a
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OCR Scan
|
PCF84CXXXA
MAB8048)
7110fl5b
mst 702 lf
LA617
mst 702
9398 393 40011
|
PDF
|