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    BA27 CHIP TRANSISTOR Search Results

    BA27 CHIP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BA27 CHIP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF740

    Abstract: f3620 BF136 BF681 BF239 ad1794 BA 9511 F7314 30014 BF273
    Text: MOTOROLA Order this document by: DSP96002/D, Rev. 2 SEMICONDUCTOR TECHNICAL DATA DSP96002 32-BIT GENERAL PURPOSE FLOATING-POINT DUAL-PORT PROCESSOR The DSP96002 is designed to support intensive graphic image and numeric processing. It is a dual-port, low-power, general purpose floating-point processor. The DSP includes 1024


    Original     		PDF DSP96002/D, DSP96002 32-BIT DSP96002 BF740 f3620 BF136 BF681 BF239 ad1794 BA 9511 F7314 30014 BF273

    f3620

    Abstract: BF681 BF136 ba05 30014 aa26 stg Nippon capacitors BF308 BF740 BTS 129
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by: DSP96002/D, Rev. 2 DSP96002 The DSP96002 is designed to support intensive graphic image and numeric processing. It is a dual-port, low-power, general purpose floating-point processor. The DSP includes 1024


    Original     		PDF DSP96002/D, DSP96002 DSP96002 32-bit f3620 BF681 BF136 ba05 30014 aa26 stg Nippon capacitors BF308 BF740 BTS 129

    BA100 diode

    Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
    Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)


    Original     		PDF KADxx0300B 2Mx16) 69-Ball 10MAX BA100 diode BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode

    transistor sr61

    Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
    Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K5T6432YT 4Mx16) 2Mx16) 81-Ball 80x11 transistor sr61 BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor

    SAMSUNG MCP

    Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
    Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002


    Original     		PDF KBB0xA500M 8Mx8/4Mx16) 8Mx16) 4Mx16) 150uA 100uA 200uA 80-Ball 80x12 SAMSUNG MCP KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100

    KBB0XA300M

    Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
    Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary


    Original     		PDF KBB0xA300M 8Mx8/4Mx16) 8Mx16) 2Mx16) 80-Ball 80x12 transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
    Text: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002


    Original     		PDF KAB0xD100M 8Mx8/4Mx16) 8Mx16) 2Mx16) 39page) 43page) 80-Ball SAMSUNG MCP samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60

    48LC2M32B2

    Abstract: smd transistor j31c 16b2 zener diode zener 15B2 J32C motorola ZENER 15B1 VF0 Panasonic inverter 6a3 diode zener 10b2 zener diode zener 12B2
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MPC885ADSUG 6/2004 Rev. 1 MPC885ADS PowerQUICC Application Development System User’s Guide For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc.


    Original     		PDF MPC885ADSUG MPC885ADS 48LC2M32B2 smd transistor j31c 16b2 zener diode zener 15B2 J32C motorola ZENER 15B1 VF0 Panasonic inverter 6a3 diode zener 10b2 zener diode zener 12B2

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


    Original     		PDF KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    PEB22521

    Abstract: AR20 BA22 BA23 z73 trigger transformer k3210
    Text: D ata S he et, D S7 , A pr il 20 00 ANIC A n a lo g N e t w o r k I n te r fa c e C ir c u it PSB 4450 Version 1.2 PSB 4451 Version 1.2 Transceivers N e v e r s t o p t h i n k i n g . Edition 2000.04.07 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF D-81541 PEB22521 AR20 BA22 BA23 z73 trigger transformer k3210

    fr53

    Abstract: FR52 LX41 ic ntp- 3000 Z31 SMD Innovative Processing AG PSB 4450 datasheet BA23 PEB22521 P-TSSOP-28-1
    Text: D at a She et , DS8 , Sep te mb er 20 00 ANIC A n a lo g N e t w o r k I n te r fa c e C ir c u it PSB 4450 Version 1.2 PSB 4451 Version 1.2 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000.09.04 Published by Infineon Technologies AG,


    Original     		PDF D-81541 fr53 FR52 LX41 ic ntp- 3000 Z31 SMD Innovative Processing AG PSB 4450 datasheet BA23 PEB22521 P-TSSOP-28-1

    DSP96002 APPLICATIONS

    Abstract: JG-27 ABB B18 DSP96002 JG11 PAL Decoder 16L8 BA-06 74FACT00 ICT-286-S-TG Nippon capacitors
    Text: DSP96002ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 Order this document by: DSP96002ADMUM/AD Introduction This document supports the DSP96002 Application Development Module


    Original     		PDF DSP96002ADM DSP96002ADMUM/AD DSP96002 DSP96002ADM) additio2-TG30 ICT-203-S-TG ICE-283-S-TG ICT-286-S-TG PGA-244AH3-S-TG ICA-143-SCO-TG30 DSP96002 APPLICATIONS JG-27 ABB B18 JG11 PAL Decoder 16L8 BA-06 74FACT00 ICT-286-S-TG Nippon capacitors

    transistor A1624

    Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
    Text: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF K5N1229ACD-BQ12 512Mb 128Mb transistor A1624 ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N

    MPC812

    Abstract: smart sm73228 CS 20A SM73228 MPC801 MPC821 MPC823 MPC850 MPC860 MPC860SAR
    Text: 6/97 MPC8XXFADS Design Specification—Rev 0 PRELIMINARY Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or


    Original     		PDF

    diode db3 c248

    Abstract: CPPLC7LTBR EPM3128ATC100-10 IC LM317 8pin siemens ferrite n22 p14 zener DB3 C209 K4S643232-TC60 MURATA BLM18ag121 HALO N5 C242-C244
    Text: Freescale Semiconductor, Inc. User’s Manual Freescale Semiconductor, Inc. MPC852TADSRM/D Version 1.0 June 1, 2003 MPC852TADS User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


    Original     		PDF MPC852TADSRM/D MPC852TADS diode db3 c248 CPPLC7LTBR EPM3128ATC100-10 IC LM317 8pin siemens ferrite n22 p14 zener DB3 C209 K4S643232-TC60 MURATA BLM18ag121 HALO N5 C242-C244

    mosfet d436 datasheet

    Abstract: MD5 5vDC Sun Hold transistor a844 SUN HOLD MD5 5vDC nec a1129 d1541 potensiometer bd632 transistor D1541 circuit diagram application a1129
    Text: Freescale Semiconductor, Inc. User’s Manual Freescale Semiconductor, Inc. MPC86XADS Version-A January 14, 2003 MPC86XADS User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


    Original     		PDF MPC86XADS FreescaleMPC866ADS mosfet d436 datasheet MD5 5vDC Sun Hold transistor a844 SUN HOLD MD5 5vDC nec a1129 d1541 potensiometer bd632 transistor D1541 circuit diagram application a1129

    Telefunken

    Abstract: zener Diode B23 DALE SOMC elco 330 u Elco 90 pin connector 74ACT86 siemens rs232 connector com PLUG 41612 elco 32.768 smd pcmcia for RS232
    Text: MOTOROLA Motorola Semiconductor Israel Ltd. MICROPROCESSOR & MEMORY TECHNOLOGIES GROUP MPC860ADS User’s Manual Board Revision - ENG ISSUE 0.1- DRAFT 8/24/95 ISSUE 1.1 - Release 1/29/96 ISSUE 1.1a - Release 3/22/96 SIX SIGMA 6σ MOTOROLA Thi d t t d ith F


    Original     		PDF MPC860ADS MPC860ADS, MPC860ADS Telefunken zener Diode B23 DALE SOMC elco 330 u Elco 90 pin connector 74ACT86 siemens rs232 connector com PLUG 41612 elco 32.768 smd pcmcia for RS232

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


    Original     		PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    RAS 1210 SUN HOLD

    Abstract: DRALORIC CR1206 RJ45 datasheet 8P8C motorola 6810 4816P-001 sun hold ras 1210 smd led 1210 80 pin simm flash programmer DALE SOMC elco 330 u
    Text: MOTOROLA Motorola Semiconductor Israel Ltd. MICROPROCESSOR & MEMORY TECHNOLOGIES GROUP MPC8XXFADS Revision ENG & Revision PILOT User’s Manual AUTHOR: YAIR LIEBMAN - MSIL ISSUE 0.1 - Release 15,1,98 ISSUE 0.0 - Draft 22,7,97 6σ SIX SIGMA MOTOROLA MPC8XXFADS - User’s Manual


    Original     		PDF MPC860FADSUM/D RAS 1210 SUN HOLD DRALORIC CR1206 RJ45 datasheet 8P8C motorola 6810 4816P-001 sun hold ras 1210 smd led 1210 80 pin simm flash programmer DALE SOMC elco 330 u

    Untitled

    Abstract: No abstract text available
    Text: ICs for Communications Analog Network ln|rface Circuit ANIC PSB 4450 Version 1.2 PSB 4451 Version 1.2 Preliminary Data Sheet 07.99 DS 5 PSB 4450 Revision History: Current Version: 07.99 Previous Version: Preliminary Data Sheet DS4 Page in previous Version


    OCR Scan     		PDF

    AH40

    Abstract: AW33 AA41 BC35 EPF8050M
    Text: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features Data Sheet • Prelim inary Information ■ ■ ■ ■ Architecture Description Ideal for ASIC prototyping Combination of four EPF81188 devices and one Field Programmable Interconnect FPIC device


    OCR Scan     		PDF EPF8050M 8000M EPF81188 30-MHz EPF8050M 560-pin 26-inch 50-mil AH40 AW33 AA41 BC35

    epf8050M

    Abstract: No abstract text available
    Text: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features D a tasheet • Prelim inary Information ■ ■ ■ Architecture Description The Altera EPF8050M device combines four EPF81188 devices and one Field Programmable Interconnect FPIC device to create a 50,000-gate


    OCR Scan     		PDF EPF8050M 8000M EPF8050M EPF81188 000-gate 560-pin EPF8050M,

    S8050M

    Abstract: BC39 av30 ate transistors BC23 equivalent for S AV36 EPF81188 ALTERA flex 81188
    Text: ÆQüI^ August 1994, ver. 1 Features □ □ □ □ □ Architecture Description I* FLEX 8000M Programmable Logic Device Data Sheet P relim inary Inform ation *1 >1 EPF8050M 50,000 usable gates ideal for ASIC prototyping C o m b in atio n of fo u r E P F 8 1 1 8 8 d e v ice s and one Field


    OCR Scan     		PDF EPF8050M 8000M EPF81188 560-pin 26-inch 50-mil S8050M BC39 av30 ate transistors BC23 equivalent for S AV36 ALTERA flex 81188