tunable laser diode
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8570SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570SCxxxQ-BA
NX8570SCxxxQ-BA
tunable laser diode
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883Q
Abstract: PX10160E 19275
Text: DATA SHEET LASER DIODE NX8571SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571SCxxxQ-BA
NX8571SCxxxQ-BA
883Q
PX10160E
19275
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NX8571SCxxxQ-BA
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8571SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571SCxxxQ-BA
NX8571SCxxxQ-BA
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nec nx8562
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8570SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570SCxxxQ-BA
NX8570SCxxxQ-BA
nec nx8562
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CONN CRD 19
Abstract: HD b3c MA12 SC400 Matrix keyboard UART550 BHRY
Text: Systems in Silicon r\Q^C3$ =YSb_S_^db_\\Ub 5fQ\eQdY_^2_QbT?fUbfYUg 1=4<_WYS@b_TeSdc4YfYcY_^ r\Q^6Q]Y\i?fUbfYUg CicdU]2\_S[4YQWbQ] Systems in Silicon H igh W ord A LL I N TE R F A CE S S HO W N B ank 0 Ba nk 1 B ank 2 Ba nk 3 D RA M DR AM D RAM DR AM
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IRQ10
IRQ11
IRQ12
IRQ14
IRQ15
SC400
CONN CRD 19
HD b3c
MA12
SC400
Matrix keyboard
UART550
BHRY
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HD R 433 M
Abstract: 3tb 40 BOB363343398 a 433 k lg dd
Text: 75@,~ y96E|,~5z @=:83 @A0A4 ?4:0F 5LHWXULV _ Hfhml= CB [gfljgd _ CgmZd] QBP @B gmlhml gj RPH@B @B gmlhml Ead] Lg= D4667;4 _ 7333T \a]d][lja[ klj]f_l` _ Njafl]\ [aj[mal ZgYj\ egmfl Ead] Lg1= I83394738 _ PgGQ [gehdaYfl Ead] Lg1= BOB363343398;4 8<>BA ,R@ ? 58
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D4667
7333T
I83394738
BOB363343398
65TCB
48TCB
4333K
833TCB-
418ee
HD R 433 M
3tb 40
a 433 k
lg dd
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54PIN
Abstract: M12L32162A M12L32162A-7BG M12L32162A-7TG
Text: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Elite Semiconductor Memory Technology Inc.
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M12L32162A
16Bit
M12L32162A
54PIN
M12L32162A-7BG
M12L32162A-7TG
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Untitled
Abstract: No abstract text available
Text: !" !" # # $ $ !" !" # $ % & ! % % & ' # * + ,( -./ + 0 4 5 1 6 % '7 5 % '9 '9 5 '4 : % ' % 5 4 ' 7 %5 '9 '9 '4 ' # 1 ' ,(23 + 1 6 8 # % 8 & & 4 ; : 5 ;% 5 % #()>?@ '= $: & A BA : '# ; < 6 #()>?@ ' % & '; 9 5 5 ;% 5 , %: ' " :# 18 A 5D5 5 ' 1C8 6 5 %: 5 5
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Untitled
Abstract: No abstract text available
Text: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics
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M52S32162A
M52S32162A
16Bit
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M52S32162A
Abstract: No abstract text available
Text: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics
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M52S32162A
16Bit
M52S32162A
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Untitled
Abstract: No abstract text available
Text: ESMT M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Revision 0.4 (Sep. 28 2007) - add speed –5 sepc.
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M12L32162A
M12L32162A
16Bit
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M52D32162A
Abstract: No abstract text available
Text: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Revision 1.2 (Apr. 24,2007) - Delete BGA ball name of packing dimensions Revision 1.3 (Apr. 27,2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA)
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M52D32162A
16Bit
M52D32162A
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BA 2003
Abstract: GLT5160L16 GLT5160L16-10TC GLT5160L16-8TC
Text: GLT5160L16 ADVANCED 16M 2-Bank x 524288-Word x 16-Bit Synchronous DRAM FEATURES u Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address)
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GLT5160L16
524288-Word
16-Bit)
400-mil,
50-Pin
BA 2003
GLT5160L16
GLT5160L16-10TC
GLT5160L16-8TC
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GLT5160L16
Abstract: GLT5160L16-10TC db3 22
Text: GLT5160L16 ADVANCED 16M 2-Bank x 524288-Word x 16-Bit Synchronous DRAM FEATURES ◆ Single 3.3 V ± 0.3 V power supply ◆ Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz ◆ Fully synchronous operation referenced to clock rising edge ◆ Dual bank operation controlled by BA (Bank
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GLT5160L16
524288-Word
16-Bit)
400-mil,
50-Pin
GLT5160L16
GLT5160L16-10TC
db3 22
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GLT540L16-10TC
Abstract: BA QB GLT5160L16
Text: GLT540L16 ADVANCED 4M 2-Bank x 131072-Word x 16-Bit Synchronous DRAM FEATURES ◆ Single 3.3 V ± 0.3 V power supply ◆ Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz ◆ Fully synchronous operation referenced to clock rising edge ◆ Dual bank operation controlled by BA (Bank
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GLT540L16
131072-Word
16-Bit)
400-mil,
50-Pin
GLT540L16-10TC
BA QB
GLT5160L16
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GLT5160L16
Abstract: GLT540L16-10TC
Text: GLT540L16 ADVANCED 4M 2-Bank x 131072-Word x 16-Bit Synchronous DRAM FEATURES ◆ Single 3.3 V ± 0.3 V power supply ◆ Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz ◆ Fully synchronous operation referenced to clock rising edge ◆ Dual bank operation controlled by BA (Bank
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GLT540L16
131072-Word
16-Bit)
400-mil,
50-Pin
GLT5160L16
GLT540L16-10TC
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GLT5160L16
Abstract: GLT5160L16-10TC GLT5160L16-8TC
Text: GLT5160L16 ADVANCED 16M 2-Bank x 524288-Word x 16-Bit Synchronous DRAM FEATURES u Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address)
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GLT5160L16
524288-Word
16-Bit)
400-mil,
50-Pin
GLT5160L16
GLT5160L16-10TC
GLT5160L16-8TC
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ba682
Abstract: diode marking code 682 BA683 MAF100
Text: I : übe t> : m aaasbos 0 0 1 5 7 3 1 • • ? « s ie g - 7 " - Ô 7 - /5 " Silicon PIN Diodes BA 682 .BA 683 - SIEMENS AKTIENGESELLSCHAF -• Low-loss VHF band switch for TV tuners K A Type1 Marking
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Q62702-A723
Q62702-A121
Q62702-A145
235b05
QQ1S733
ba682
diode marking code 682
BA683
MAF100
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MAF100
Abstract: diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 A723 682 diode
Text: I - QBE D • • aaaSbQS 0015731 7 M S I E G Silicon PIN Diode» 7"- • - Ô7 - /S BA 682 • BA 683 - SIEMENS AK TI EN G E S E L L S C H A F - Low-loss VHF band switch for TV tuners K o A n Type1 Marking Ordering code for versions in bulk
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-BA683
Q62702-A145
Q62702-A723
Q62702-A121
BA683
QQ1S733
BA682
MAF100
diode 682
diode marking code 682
BA 682
BA682
DIODE ba 683
BA diode
BA683
A723
682 diode
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bs33
Abstract: BDV67CF ZH09 BDV67AF BDV67BF BDV67DF NPN POWER DARLINGTON TRANSISTORS
Text: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN N P N epitaxial ba se Darlington transistors for au dio output stages
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BDV67AF/67BF/67CF/67DF
BDV66AF/66BF/66CF/66DF.
OT199
BDV67AF
BDV67BF
BDV67CF
BDV67DF
bs33
ZH09
NPN POWER DARLINGTON TRANSISTORS
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mq1132
Abstract: MQ1100 TX09D50VM1CBA Hitachi TCON CSI 2702 TCon20 2705-TX09D50VM1CBA-2 hitachi tft CBA10 stv 312
Text: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 8215811 (7 LINE) FAX: (07) 821-5815 FOR MESSRS :_ DATE : Mav.19.2004 CUSTO M ER'S ACCEPTANCE SPECIFICATIONS TX09D 50VM 1C BA CONTENTS
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TX09D50VM1CBA
7B64PS
2701-TX09D50VM1CBA-3
2702-TX09D50VM1
2703-TX09D50VM1
2704-TX09D50VM1
mq1132
MQ1100
TX09D50VM1CBA
Hitachi TCON
CSI 2702
TCon20
2705-TX09D50VM1CBA-2
hitachi tft
CBA10
stv 312
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telefunken ed 32 5000
Abstract: No abstract text available
Text: _ BFP81 ViSH A Y ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF am plifier up to 2 GHz, especially fo r m obile te le phone. Features • Sm all fe ed ba ck capacitance
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BFP81
BFP81
20-Jan-99
telefunken ed 32 5000
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Untitled
Abstract: No abstract text available
Text: Advance information AS4LC256K64S0 Ü! 3.3V 256K x 64 C M O S synchronous graphic RAM Features • O rganization - 131,072 w o rd s x 64 bits x 2 banks • Fully synchronous - All signals referenced to positive edge o f clock • Two internal banks controlled by BA bank select
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AS4LC256K64S0
128-pin
AS4LC256K64S0-133QC
AS4LC256K64S0-1OOQC
-60002-A.
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TC74HC191P
Abstract: No abstract text available
Text: T O S HI BA LOfilC/MEMQRY 14E p | .,017248 OQlSlSa 3 | TC74HC190P/F - TC74HC191P/F 'T - y S - Z .3 -D°\ TC74HC190P/F BCD UP/DOWN COUNTER TC74HC191P/F 4-BIT BINARY UP/DOWN COUNTER_ The TC74HC190 and TC74HC191 are high speed CMOS 4-BIT UP/DOWN COUNTERS fabricated
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TC74HC190P/F
TC74HC191P/F
TC74HC190P/F
TC74HC191P/F
TC74HC190
TC74HC191
TC74HC191P
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