rg59 connector
Abstract: No abstract text available
Text: Lead BNC to BNC Specifications Cable Type Coaxial Cable Type RG59 OFC RG59 Connector Type A Connector Type B BNC Plug BNC Plug Page <1> Impedance R Lead Length (m) Part Number 75 1.5 BA-BVL6002 16/05/08 V1.0 Lead BNC to BNC Notes: International Sales Offices:
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BA-BVL6002
rg59 connector
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Untitled
Abstract: No abstract text available
Text: Bussmann Telpower DC Power Distribution Fuses TPL ® 170 Volts, DC, 70-800 Amps Dimensional Data 2.66" ± .031 (67.5mm) (– 0.79) 2.19" (55.6mm) 1.91" (48.4mm) 1.0" 1.16" (± 0.02) (25.4mm) (29.4mm) (– 0.51) .75" (19.1mm) .33" .19" (8.3mm) (4.8mm) TPL-BA, TPL-BB, TPL-BC, TPL-BD, TPL-BE,
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E56412
SB99217
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Untitled
Abstract: No abstract text available
Text: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW AQ AE K BA Y DETAIL "B" AH Q AM BB Y BB Y BB Y MN BC BB Y W 20 19 AX Y DETAIL "C" 18 17
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CM75RX-34SA
Amperes/1700
120ylvania
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Untitled
Abstract: No abstract text available
Text: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW 45° K AT AE BE K BA BD DETAIL "B" AH Q AM BB Y BB Y BB Y K T MN BC BB Y W 20 19 AX Y DETAIL "C"
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CM75RX-34SA
Amperes/1700
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8 channel RF transmitter and Receiver circuit for RC airplane
Abstract: BA rx transistor T45 to DB9 DL0054 toshiba rdram
Text: TC59RM716 8 MB/RB-8,-7,-6 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAMTM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video and any other applications
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TC59RM716
128/144-Mbit
600-MHz
800-MHz
TEST77
TEST78
8 channel RF transmitter and Receiver circuit for RC airplane
BA rx transistor
T45 to DB9
DL0054
toshiba rdram
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256-288 MBit Direct RDRAM
Abstract: DL0054 da53 BA rx transistor BYt 32 TC59RM818MB-6 TC59RM818MB-7 TC59RM818MB-8 RDRAM SOP
Text: TC59RM816 8 MB-8,-7,-6 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAMTM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video and any other applications
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TC59RM816
256/288-Mbit
600-MHz
800-MHz
TEST77
TEST77
TEST78
TEST78
256-288 MBit Direct RDRAM
DL0054
da53
BA rx transistor
BYt 32
TC59RM818MB-6
TC59RM818MB-7
TC59RM818MB-8
RDRAM SOP
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M2S56D20
Abstract: M2S56D20ATP M2S56D30ATP
Text: MITSUBISHI LSIs DDR SDRAM Rev.1.44 M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10 M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10 Mar. '02 256M Double Data Rate Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,
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M2S56D20/
40ATP
-75AL,
40AKT
M2S56D20ATP
16777216-word
M2S56D30ATP
8388608-word
M2S56D20
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Untitled
Abstract: No abstract text available
Text: DDR SDRAM Rev.1.31 Dec. '01 MITSUBISHI LSIs M2S56D20/ 30/ 40ATP –75A, -75, -10 M2S56D20/ 30/ 40AKT –75A, -75, -10 256M Double Data Rate Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,
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M2S56D20/
40ATP
40AKT
M2S56D20ATP
16777216-word
M2S56D30ATP
8388608-word
M2S56D40ATP/
4194304-word
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DDR RAM 512M
Abstract: DDR dRAM 512M M2S12D20TP M2S12D30TP
Text: DDR SDRAM Rev.1.1 MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L MITSUBISHI Feb.ELECTRIC '02 512M Double Data Rate Synchronous DRAM DESCRIPTION M2S12D20TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are
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M2S12D20/
M2S12D20TP
432-word
M2S12D30TP
216-word
M2S12D20/30TP
133MHz,
DDR RAM 512M
DDR dRAM 512M
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UGSV1286T
Abstract: No abstract text available
Text: UGSV1286T Data sheets can be downloaded at www.unigen.com 128Mb CMOS SYNCHRONOUS DRAM General Description The UGSV1286T is a 134,217,728bit CMOS Synchronous DRAM. organized as 4 banks of 2,097,152 words by 16 bits. All inputs and outputs are synchronized with the rising edge of the clock input and all levels are compatible with LVTTL.
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UGSV1286T
128Mb
UGSV1286T
728bit
54Pin
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Sonnenschein SL-770
Abstract: Sonnenschein SL-340 SL-340 ica 700 Y Sonnenschein SL-790 SL-350 SL-386 LI 20 AB diode ed 85 SL-550
Text: Inorganic Li hium Ba eries Shor Form Ca a ogue The Sonnenschein Li hium Ba ery The Sonnenschein Li hium Ba ery is a componen ha can be permanen y connec ed o a circui , in many cases for he ife ime of he equipmen . I s major advanages are: High ce vo age.
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SL-360/486
SL2000
SL2770
SL2780
Sonnenschein SL-770
Sonnenschein SL-340
SL-340
ica 700 Y
Sonnenschein SL-790
SL-350
SL-386
LI 20 AB
diode ed 85
SL-550
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4154 diode
Abstract: BAW75 R-1 GREEN CATHODE diode
Text: BAW75 Silicon planar logical diode BA W 75 is a silicon planar diode in "double heat sink" technique in a case 56 A 2 DIN 41 883 D O -35 . The cathode is marked by a green colour ring. BAW 75 is particularly suitable for use as high-speed switch in computers as well as for general
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BAW75
BAW75
2702-A
4154 diode
R-1 GREEN CATHODE diode
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V23614-A102-A57
Abstract: C42334-A285 V23600-A1027-C1 C4233 V23614-A602 V23600A1027C1
Text: Coaxial Connectors Series 1,0/2,3 S e rie s 1,0/2,3 50 a an d 75 Q 1 he se connectors com ply with C E C C 22230. T he connectors for 75 f l are suitable for operation up to 2 G H z. The design is ba se d on the pin-and-socket principle, i.e. the inner and outer conductors
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V23614-A102-A57
C42334-A285-A6Q2
V23614-A602-C57
V23600-A1027-C1
V2360Q-A1227-G1
V23614-A1030-G2
V23600-A263-P71
C42334-A285
C4233
V23614-A602
V23600A1027C1
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Untitled
Abstract: No abstract text available
Text: 71 Series High-Performance, Horizontal Single-Port Jacks • Enhanced Shield For Commonly Ordered Parts See Page 25 i Eight-Contact, Eight-Position Enhanced Shield PG4-BA Style Standard Footprint | • § : , ]— 148|3 75] TO i HIGHEST POINT | OF BEAU 083 (2.12] TO —
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450CM3]
RJ-45'
SS-7188-NF
SS-7188S-A-NF
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Untitled
Abstract: No abstract text available
Text: Sectl 0 n 5 H E RAYTHEON/ D | fl | _ LM111/LH2111 S E M IC O N D U C TO R LM111/LH2111 Voltage Comparators Features • ■ ■ ■ 75 R73 ba 0 0 0 b l 3 5 Low input offset current — 10 nA max Low input bias current — 100 nA max. Operates from a single +5V supply
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LM111/LH2111
LH2111
LM111
16-lead
LH2111
Mil-Std-883B
St173bD
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KA206
Abstract: KZZ47 KZZ46 tesla schaltkreise KA206S KA225 KZZ45 KA207 KA221 KA22235
Text: TESLA ELEKTRONICKE 35E D • flTSDS4H QDnai34 1D3 ■ TELC ~T=ö -Oi SILICO N HIGH S P EED DIO D ES SILIZIUM S EH R S C H N E LLE DIODEN KA206 mA V 75 50 Characteristic data • • mW ba Uf °c V at bei Kenndaten If Ir mA pA at bei Ui trr from von If = 5 mA
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T5D544
QDnai34
KA206
KA207
KA206S
KA206,
KZZ45
KZZ46
KZZ47
KZZ47
KZZ46
tesla schaltkreise
KA225
KZZ45
KA221
KA22235
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250v t855e4
Abstract: ADK1807 YA-2RB19-A64 ADK1
Text: < >I slCM O ro m icro swtt <t a Honeywell Division FED .M F B .CO D E CATALOG L I S T I N G YA-2RB19-A64 ADK1807 SWITCH - BA SIC 9 1 9 2 9 X .75 ±.01 CD < i ST AIN LESS STEEL PLUNGER 2 m 01 n CNJ O 1.03 ±-02 OPERATING POSITION >Lü O < jar.|40t-SS? A CO
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YA-2RB19-A64
ADK1807
5M-1982
250v t855e4
ADK1807
YA-2RB19-A64
ADK1
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J223
Abstract: No abstract text available
Text: FEATURES • D C -1 5 0 MHz ■ 0.75 dB Insertion Loss ■ 110 dB Isolation ■ Non-Reflective SP2T ■ SMA Connectors SO LD ER T E R M IN A L -B 4 P L S -1 (2 P L S ) 4 3© (o )J2 2© BA SIC so .75 ± .03 J1© 1© J2 -1 (FA ILS A FE) 50 .X X .X X X a
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100C0350
J223
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T126
Abstract: No abstract text available
Text: CAtALOGUE LISTING Dü œ o d œ s t c m b V5B120DB TCH-BA OO ±0 .I 3.3 ±0. I5 6.35 Û i Q 0.3 O 4 . 75 T" in + 0.2 - 0.0 0 \ .4 HOLE IN T E R M I N A L S 2 L±J <J < _l û_ ÜJ OC ±0.25 20.2 PRETRAVEL h* 0) + 0 . IO 03. I -0.05 CD MSo: iii *55 <5 c\j
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BS3955
250VX,
IMV5DI20DB
T126
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SUS304
Abstract: L-0501 RJ45 dimension drawing RJ45 dwg
Text: R EV . S ta tu s PRELIMINARY 0 5 /2 8 /0 2 LL T A /V \l2 J < A l0 /1 0 0 RJ45 Integrated Ba se -T X, 1X4, T h ro ugh Connector gi Hole, LEDs, T a p - D o w n § Meets IEEE 8 0 2.3 and ANSI X3.263 O perating te m p e ra tu re : 0°C to + 7 0 'C S torage Tem perature: — 40'C to +75"C
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Al0/100
ACAD\TTC\A1130643
L050-1
SUS304
L-0501
RJ45 dimension drawing
RJ45 dwg
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MP7523KN
Abstract: 7523a
Text: M P 7 5 23 /X R D 75 2 3 15 V CM O S M ultiplying 8-Bit Digital-to-Analog C onverter .the analog plus com pany VJSSSFÆ ÊFâ January 1996-2 FEATURES APPLICATIONS Full F o u r - Q u a d r a n t Mul t i pl yi ng Low Feedthrough: F as t Settling: Ba t t e r y O p e ra t e d E q u i p m e n t
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MP7524/XRD7524
100ns
10-bits
MP7523/XRD7523
MP7523KN
7523a
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74150
Abstract: 18E DBM panasonic resistors ERA marking code CH1770 CH1765-01 fsk modem 1200 HM6116 interface z 80 with 8251a usart marking code 1AW 74LS374 74LS373 74ls373
Text: CERÍ1ETEK M I C R O E L EC TR ON IC S IflE D 1 7 0 0 • EQ05flD3 5 ■ S E R I E ST-75 -33-05 Cermetek mtoroatootronlo« 130» B O * IE O A » A V I SU M N YY A lt CA •<««« T lL .U 0 * t 7 t a - W « CH1765 » 6 0 / 1 2 6 0 BA U D IM T K lL t& tM T tftODCM
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CH1765
cH1770
CH1760E
CH17L60
S00SflD3
74150
18E DBM
panasonic resistors ERA marking code
CH1770
CH1765-01
fsk modem 1200
HM6116
interface z 80 with 8251a usart
marking code 1AW
74LS374 74LS373 74ls373
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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BA513
Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
Text: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150
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BA511
1N4148
BA513
1N4448
BAS17
1N4150
701/iA
BA518
1N4151
BA519
iskra diode
BA523
BA521
DIODE BA531
BA521 diode
BA531
iskra
BA533
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