Untitled
Abstract: No abstract text available
Text: 5ÔE D • b7E424D 0G1453Ô <^2 I IOKI J O K I Semiconductor M SC1149-XX O K I SEMICONDUCTOR GROUP 33-BIT SEGM ENT DRIVER GENERAL DESCRIPTION The MSC1149-XX is a vacuum fluorescent display tube driver IC, w hich consists of a 34-bit shift register, a 33-bit latch circuit the
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b7E424D
0014S3Ã
MSC1149-XX
33-BIT
MSC1149-XX
34-bit
msc1148-xxrs
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bi-directional switches FET
Abstract: til 431 ocm240 OCM200 OCM201 OCM220 OCM221 OCM241
Text: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay G EN ER A L D E S C R IP T IO N The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS
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10-mA
L72454D
01ciDS4
b724E40
bi-directional switches FET
til 431
ocm240
OCM200
OCM201
OCM220
OCM221
OCM241
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MSM51V17100
Abstract: 724540
Text: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.
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MSM51V17100_
216-Word
MSM51V17100
cycles/32ms
MSM51V17100
A0-A11
b724240
724540
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Untitled
Abstract: No abstract text available
Text: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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MD56V62800A
152-Word
MD56V62800A
cycles/64
b724B40
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6606 80-DOT LCD DRIVER WITH KEY MATRIX G ENERAL DESCRIPTIO N MSM6606 is an LCD driver for a 1/2 duty dynamic display, that can directly drive an LCD for up to 80 segments, and one LED. Due to an internal 5x6 keyscan circuit, keyboard input
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MSM6606
80-DOT
MSM6606
80-segment
L724540
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BT 151 PIN DIAGRAM
Abstract: MK31VT872A MK31VT872A-8YC
Text: M K31VT872A-8YC 98.06.26 O K I iSem ¡conductor M K 3 1 V T 8 7 2 A -8YC 8,388,608 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1 BANK): DESCRIPTION The Oki MK31VT872A-8YC is a fully decoded, 8,388,608 x 72bit synchronous dynamic random access memory composed of eight 64Mb DRAMs(8Mx9) in TSOP packages
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MK31VT872A-8YC
K31VT872A-8YC_
MK31VT872A-8YC
72bit
168-pin
72-Bit
b724E40
D0E711E
BT 151 PIN DIAGRAM
MK31VT872A
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HS-757
Abstract: SHARP IC 701 I X11 hs 757 sami csi
Text: OKI Semiconductor MSM6688 ADPCM SOLID-STATE RECORDER LSI • GENERAL DESCRIPTION The MSM6688 is a “solid-state-recorder” LSI developed using the ADPCM method. By externally connecting a microphone, a speaker, a speaker drive amplifier, and dedicated DRAM through the
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MSM6688
MSM6688
MSM6791
096MHz
HS-757
SHARP IC 701 I X11
hs 757
sami csi
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Untitled
Abstract: No abstract text available
Text: OKI Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IP T IO N The MSM5116160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM5116160 is OKI's CMOS silicon gate process technology.
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MSM5116160
576-Word
16-Bit
MSM5116160
16-bit
cycles/64ms
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Untitled
Abstract: No abstract text available
Text: O K I electronic components 0 LP226 Infrared LED with Collimator Lens GENERAL DESCRIPTION The OLD226 is a high-output GaAlAs infrared light emission micro-diode sealed with collimator lens in a TO-18 metal can package. High uniform ity of light distribusion and collimator lens enable
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LP226
OLD226
b724240
OLD222H
OLD226
7E4E40
2048C
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit. The technology used to fabricate the M SM 51V17100 is OKI's CMOS silicon gate process technology.
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MSM51V17100
216-Word
51V17100
216-w
S4H40
2424D
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met esso
Abstract: DS3660
Text: O K I Semiconductor MSC23436B-XXBS36/DS36 4,194,304-Word by 36-Bit DRam Module: Fast Page Mode DESC R IP TIO N The OKI M SC 23436B-xxBS36/D S36 is a fully decoded 4,194,304-word x 36-bit CM OS Dynamic Random Access Memory M odule composed of thirty-six 4-Mb DRAMs in SOJ MSM514100B packages mounted
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MSC23436B-XXBS36/DS36
304-Word
36-Bit
MSC23436B-xxBS36/DS36
MSM514100B)
72-pin
met esso
DS3660
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M6376
Abstract: No abstract text available
Text: O K I Semiconductor MSM6376_ ADPCM SPEECH SYNTHESIZER WITH EXTERNAL ROM GENERAL DESCRIPTION M SM 6376 is a two-channel mixing ADPCM speech synthesizer LSI using up to 16 M-bit external speech data storage, such as ROM, and EPROM. Since it has a built-in 12-bit DA
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MSM6376_
12-bit
MSM6376
MSM6373,
256Kbit
001L3S7
MSM6376
27C256
2HE40
M6376
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IC 74164
Abstract: ic 74161 0021336
Text: O K I S em ic o n d u cto r MSM6996H/6996V/6997H/6997V/6998/6999 Single Chip CODEC GENERAL DESCRIPTION CODEC CMOS ICs containing filters for A /D and D /A converting of the voice signal ranging from
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SGCT
Abstract: sGCT function IC 741 amp 85to D021 MSM7586-01 MSM7586-01TS-K OD21A AVR QPSK utc8
Text: O K I Semiconductor MSM7586-01 71/4 Shift QPSK MODEM/ADPCM CODEC GENERAL DESCRIPTION The MSM7586 is a CMOS IC developed for use w ith digital cordless telephones. The device provides a ti/ 4 shift QPSK m odem function and a CODEC function w hich perform s transcoding
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MSM7586-01
MSM7586
SGCT
sGCT function
IC 741 amp
85to
D021
MSM7586-01
MSM7586-01TS-K
OD21A
AVR QPSK
utc8
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me 555
Abstract: 3tr5 active suspension MD56V62800A 270b5 D56V62800A
Text: E2G1054-18-62 O K I Semiconductor MD56V62800A This version: Jun. 1998 4-B ank x 2,097,152-W ord x 8-Bit SYNCHRONOUS DYNAM IC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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E2G1054-18-62
MD56V62800A
152-Word
MD56V62800A
cycles/64
b7E4E40
me 555
3tr5
active suspension
270b5
D56V62800A
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MSM511000A-8A
Abstract: tos 40101 MSM511000 msm511000a DIN 46231
Text: i4bE D • b?eHE4ü O K I OKI OOOTSOM I b ô «O K IJ SEMI CONDUCTOR 6R0UP semiconductor MSM511000A r - V i '2 3 1,048,576-W ORD x 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511000A is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The tech
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b724240
MSM511000A
576-WORD
MSM5110OOA-70
140ns
468mW
MSM511000A-8A/80
160ns
MSM511000A-8A
tos 40101
MSM511000
DIN 46231
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001704 711 02
Abstract: 88I9 VOICE RECORDER IC SHARP IC 701 I X11 MSM6595 MSM6688 MSM6788 MSM6791 PJ 909 pj 939
Text: OKI Semiconductor MSM6788 SBC SOLID-STATE RECORDER LSI GENERAL DESCRIPTION The M S M 6788 is a solid-state-recorder developed using the Sub Band Coding SBC m ethod. By externally connecting a m icrophone, a speaker, a speaker drive am plifier, and dedicated DRAM
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MSM6788
MSM6788
MSM6791
88Z9WSW
H30H003H
31V1S-QI10S
001704 711 02
88I9
VOICE RECORDER IC
SHARP IC 701 I X11
MSM6595
MSM6688
PJ 909
pj 939
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Untitled
Abstract: No abstract text available
Text: E2G0106-18-42 O K I Semiconductor This,eision:Apr1998 MSM511 6 4 0 0 C_ 4,194,304-Word x 4-Bit D YNAM IC R AM : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
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E2G0106-18-42
MSM511
304-Word
MSM5116400C
26/24-pin
304-w
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MSM6679-XXXJS
Abstract: oki ribbon TRW speech MSM6679
Text: O K I Semiœnductor MSM6679 Voice Recognition Processor ADVANCE INFORMATION DESCRIPTION The MSM6679-XXXJS Voice Recognition Processor VRP is a single-chip processor for speaker-indepen dent voice recognition. The VRP contains its own vocabulary template in on-chip ROM. The on-chip ROM
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MSM6679
MSM6679-XXXJS
b7S454D
oki ribbon
TRW speech
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CT 1975 - sam
Abstract: CT 1975 sam MSM6373-329 MSM6374-007 TB 2929 Ho PM641
Text: O K I Semiconductor MSM6375/4/3/2-XXX 1 M-bit/512K-bit/256K-bit/128K-bit M ASK ROM S P E E C H SY N T H ESIZ ER G E N E R A L D ESCRIPTIO N The MSM6375 series is an ADPCM speech synthesis LSI utilizing a CMOS speech pro cessor circuit in conjunction with a built-in
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MSM6375/4/3/2-XXX
M-bit/512K-bit/256K-bit/128K-bit
MSM6375
12-bit
MSM6376
b72424D
CT 1975 - sam
CT 1975 sam
MSM6373-329
MSM6374-007
TB 2929 Ho
PM641
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OP125
Abstract: OD125
Text: OKI electronic com ponents O P 125 _ InGaAs PIN Photodiode for Optical Communications GEN ERAL DESCRIPTION The OD125 is designed as a receiver AMP for 30-Mbit digital signals. It features a PIN photodiode and AMP built into a TO-18 metal package.
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OP125_
OD125
30-Mbit
30MHz
1300nm
b7E424G
OD125
b75424D
b72424Q
OP125
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6170 is a1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16170 achieves high integration, high-speed operation, and low-power
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MSM51
V16170
576-Word
16-Bit
MSM51VI6170
MSM51V16170
42-pin
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6724
Abstract: B754 87424
Text: O K I SEMI CONDUCTOR GROUP ö l D E § t>7242MD ; ,6 7 2 4 2 4 0 O K I SEMICONDUCTOR GROUP . 89D 0 2 7 3 4 D 7 L ¥ £ '2 3 '/7 l l l k l s e m i c o n d u MSC2310YS9/KS9 c t o 0DDB73M r _ _ 1,048,576 BY 9 BIT DYNAMIC RAM MODULE
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7242MD
0DDB73M
MSC2310YS9/KS9_
MSC2310YS9/KS9
MSM411000JS)
MSM411000JS;
6724
B754
87424
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524,288 9bit
Abstract: No abstract text available
Text: % O K I Semiconductor MSM514900 /SL 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514900/SL is a new generation dynam ic RA M organized a s 524,288-word x 9-bit. The technology u sed to fabricate the M SM 514900/SL is O KI's C M O S silicon gate process technology.
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MSM514900/SL
288-Word
MSM514900/SL
524288-word
cycles/16ms,
cycles/28ms
b72M24D
524,288 9bit
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