b649
Abstract: D1001UK
Text: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1001UK
175MHz
100nF
10-30pF
16-100pF
D1001UK
175MHz
b649
|
b649
Abstract: D1001UK 20V5A
Text: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1001UK
175MHz
19swg
22swg
B64920A618X830
b649
D1001UK
20V5A
|
b649
Abstract: D1001UK D1019UK enamelled copper wire
Text: TetraFET D1019UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1019UK
175MHz
19swg
22swg
B64920A618X830
b649
D1001UK
D1019UK
enamelled copper wire
|
22SWG
Abstract: b649 D1002UK
Text: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1002UK
175MHz
019swg
22swg
19swg
B64920A618X830
b649
D1002UK
|
b649
Abstract: HF power amplifier D1001UK D1002UK D1001UK
Text: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1002UK
175MHz
100nF
D1001UK
10-30pF
16-100pF
D1002UK
175MHz
b649
HF power amplifier D1001UK
D1001UK
|
Untitled
Abstract: No abstract text available
Text: TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1002UK
175MHz
19swg
22swg
B64920A618X830
|
b649
Abstract: D1001UK D1019UK
Text: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS H • LOW Crss
|
Original
|
PDF
|
D1019UK
175MHz
19swg
22swg
B64920A618X830
b649
D1001UK
D1019UK
|
D5001UK
Abstract: No abstract text available
Text: TetraFET D5001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D5001UK
175MHz
22swg
19swg
B64920A618x830
D5001UK
|
b649
Abstract: enamelled copper wire transistor mhz s-parameter low-noise VHF D1019UK zl 9312
Text: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A FEATURES B • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F E H G D • LOW Crss
|
Original
|
PDF
|
D1019UK
175MHz
100nF
16-100pF
10-30pF
D1019UK
175MHz
b649
enamelled copper wire
transistor mhz s-parameter low-noise VHF
zl 9312
|
b649
Abstract: D1019UK ferrite core ER25
Text: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss G
|
Original
|
PDF
|
D1019UK
175MHz
100nF
10-30pF
16-100pF
D1019UK
175MHz
b649
ferrite core ER25
|
Untitled
Abstract: No abstract text available
Text: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1001UK
175MHz
19swg
22swg
B64920A618X830
|
b649
Abstract: D1001UK
Text: TetraFET D1001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1001UK
175MHz
19swg
22swg
B64920A618X830
b649
D1001UK
|
enamelled copper wire
Abstract: semeLab 051 b649 D5001UK J102 fet
Text: TetraFET D5001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D5001UK
175MHz
22swg
19swg
B64920A618x830
enamelled copper wire
semeLab 051
b649
D5001UK
J102 fet
|
Untitled
Abstract: No abstract text available
Text: TetraFET D1001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1001UK
175MHz
19swg
22swg
B64920A618X830
|
|
D1002UK
Abstract: b649
Text: TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1002UK
175MHz
0019swg
22swg
19swg
B64920A618X830
D1002UK
b649
|
Untitled
Abstract: No abstract text available
Text: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1001UK
175MHz
19swg
22swg
B64920A618X830
|
Untitled
Abstract: No abstract text available
Text: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS H • LOW Crss
|
Original
|
PDF
|
D1019UK
175MHz
19swg
22swg
B64920A618X830
|
Untitled
Abstract: No abstract text available
Text: TetraFET D1002UK.03 METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D1002UK
175MHz
19swg
22swg
B64920A618X830
|
J102 fet
Abstract: D5001UK
Text: TetraFET D5001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
|
Original
|
PDF
|
D5001UK
175MHz
22swg
19swg
B64920A618x830
J102 fet
D5001UK
|