buz72a
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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b53131
BUZ72A
BUZ72A_
T-39-11
0D14443
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10J 6KV
Abstract: OSM9510-12 T-23
Text: OSM951Q-12 MAINTENANCE TYPE N AMER P H I L I P S / D I S C R E T E 2SE D Q t>b53131 O O E E T I B 1 7z-23 - ¿ > s r HIGH-VOLTAGE RECTIFIER STACK The OSM9510-12 is a Silicon re c tifie r stack for high voltage applications up to 12kV in half-w ave circ u its, o r up to 6kV as one of the arm s of a
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OSM9510-12
OSM9510-12
OSM951Q-12
QD22T14
bLi53
10J 6KV
T-23
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buz349
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53T31
BUZ349
TQ218AA;
bbS3131
T-39-13
b53131
D0147SQ
buz349
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BUS133
Abstract: BUS133A BUS133H TO3 philips
Text: rr • DEVELOPM ENTDATA T his data sheet contains advance Information and specifications are subject to change w ithout notice, ^53=131 0010703 S ■ 11 BUS133 S E R IE S N AMER PHILIPS/DISCRETE 5SE D — T - 3 S - 15SIL IC O N D IFFU SED PO W ER T R A N S IS T O R S
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BUS133
BUS133H
T-33-15
7Z2I43S
BUS133A
TO3 philips
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bs107 transistor
Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
Text: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching
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BS107
MBB073
UCB700
bs107 transistor
cr 406 transistor
BS107
UCB700
transistor 406 specification
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4312 020 36640
Abstract: BY206 BLX39 bv-300 carbon resistors
Text: N AMER PHILIPS /D IS CR ET E t.b53T31 □ OE'ìSTG 653 I IAPX b'IE » A BLX39 H.F./V.H.F. POWER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is
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BLX39
110-j62
7Z77862
4312 020 36640
BY206
BLX39
bv-300
carbon resistors
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BUZ384
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE GbE D PowerMOS transistor • bbSBTBl 001470? 4 ■ BUZ384 t - 2*?'13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is
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BUZ384
T0218AA;
BUZ384
T-39-13
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable
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Q030b7D
BUK637-400A
BUK637-400B
BUK637
-400A
D0S0h74
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.
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bbS3T31
D013b3b
BLV98
OT-171
ECHANICA53T31
0013b42
BLV98
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M3105
Abstract: BY359F IEC134 M2296 M3103
Text: I I N AMER P H I L I P S / D I S C R E T E 2SE D ^53=131 0G52351 7 • MAINTENANCE TYPE BY359F—1500 l^ O Z -1 7 FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery
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bb53131
0G52351
BY359Fâ
BY359h
bbS3T31
T-03-17
M3105
BY359F
IEC134
M2296
M3103
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15S2
Abstract: BY229F IEC134 M2296 D8663
Text: 2 SE D N AMER PHIL I P S / D I S C R E T E • ^53131 0GSS30S G ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse
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0GSS30S
BY229F
T-03-17
BY229Fâ
tLS3T31
D8382
53T31
D0E531b
15S2
IEC134
M2296
D8663
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Untitled
Abstract: No abstract text available
Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.
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BSD12
7Z90791
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u706
Abstract: BU706 BU706D
Text: N ÀMER PHILIPS/DISCRETE b'ìE D • ^53*131 D02Ö2T4 ôb'î M A P X I BU706 II BU706D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed sw itching npn transistors in a plastic envelope intended fo r use in h o rizo n ta l d e fle ctio n c ircu its o f co lo u r television receivers and line operated sw itch-m ode applications. The
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D0262T4
BU706
BU706D
BU706D
BU706D)
u706
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diode 0317
Abstract: diode sv 03 7n ALPS 102 diode BYq28 BYQ28 diode sv 0317 saia double diode parallel C117 diode M1
Text: N AUER P H I LI PS /D IS CR ETE 2SE D • ^53=131 00223^5 S ■ BYQ28 SERIES Jl T - 0 3 - I7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended fo r
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BYQ28
T-03-17
m3066
diode 0317
diode sv 03 7n
ALPS 102
diode BYq28
diode sv 0317
saia
double diode parallel
C117
diode M1
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