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    B42 TRANSISTOR Search Results

    B42 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    B42 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IFN424

    Abstract: IFN425 IFN426 transistor B42 electrometers
    Text: Databook.fxp 1/14/99 12:22 PM Page B-42 B-42 01/99 IFN424, IFN425, IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Impedance Differential Amplifiers ¥ Electrometers Device Dissapation Derate 3.2 mW/°C to 50°C


    Original     		PDF IFN424, IFN425, IFN426 IFN424 IFN425 IFN426 transistor B42 electrometers

    transistor B42

    Abstract: smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Features Super miniature package. High DC current IC DC =500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		PDF 2SB1475 500mA -60mV -100mA transistor B42 smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking

    ad654 spice

    Abstract: DARLINGTON TRANSISTOR ARRAY AD75019
    Text: ANALOG DEVICES INC 51E D • OfllbflQQ 0 0 3 7 3 T M b42 ■ ANA - H7.-e>\ i r ■ MIXED SIGNAL M U M ' >Jlil\Ul' J.;! r l □ Q ANALOG DEVICES * ANALOG DEVICES INC 51E D ■ OfllbBOD 0 0 3 7 3 ^ 5 Table of Contents 1 Summary 2 ASIC Processes 5 LC2MOS Cell Library


    OCR Scan     		PDF

    transistor t07

    Abstract: NEX2303 NE 2301 02cj NEX2300 NEX2301 NEX230187 NEX2302 NEX230265 NEX230365
    Text: NEC/ CALIFORNIA NEC b42?m4 0001202 S 1SE D .7 -3 3 r < 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H PO W ER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with


    OCR Scan     		PDF NEX2300 NEX2300 NEX2301 NEX2302 NEX2303 NEX230365 transistor t07 NE 2301 02cj NEX230187 NEX230265

    NEX2301

    Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
    Text: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with


    OCR Scan     		PDF NEX2300 NEX2300 NEX2301 NEX2302 NEX2303 NEX230365 NEX230187 NEX230265

    nec v70

    Abstract: NEC V60 NEC V20 hardware nec v30 PD70632 nec v20 32-bit microprocessor pipeline architecture 4 BIT ALU IC IEEE754 8 BIT ALU design by cmos
    Text: N E C ELECTRONICS INC 3QE D • b42?S25 002532b T ■ ¿/PD70632 V 70 3 2 -B it, High-lntegration CM OS M icroprocessor Z V liC . NEC Electronics Inc. Description Features The ixPD70632 (V70'") is the second implementation of NEC’s 32-bit V-Serles architecture. Like its predecessor,


    OCR Scan     		PDF 002532b uPD70632 ixPD70632 32-bit nPD70616 V60TM) Incream27525 0G25327 nec v70 NEC V60 NEC V20 hardware nec v30 PD70632 nec v20 32-bit microprocessor pipeline architecture 4 BIT ALU IC IEEE754 8 BIT ALU design by cmos

    1601a

    Abstract: 1B01A SY 356 10PIN CXA1389AQ SBX1601A SBX1602A SMPTE 352 A2JG
    Text: 0 3 0 2 3 0 3 0 0 0 5 5 2 2 b42 « S O N Y SONY Serial Interface/Transmission Encoder Description SBX1601A Package Outline Unit : mm The SBX1601A is a hybrid IC encoder that converts the parallel data into serial form for the purpose of interface or transmission of digital video or audio data.


    OCR Scan     		PDF SBX1601A SBX1601A SBX1602A CXA1389AQ SBX-1601A D00SS4S SBX5601A 1601a 1B01A SY 356 10PIN SMPTE 352 A2JG

    sbx16

    Abstract: No abstract text available
    Text: 0 3 0 2 3 0 3 0 0 0 5 5 2 2 b42 « S O N Y SONY Serial Interface/Transmission Encoder Description SBX1601A Package Outline Unit : mm The SBX1601A is a hybrid IC encoder that converts the parallel data into serial form for the purpose of interface or transmission of digital video or audio data.


    OCR Scan     		PDF SBX1601A SBX1602A CXA1389AQ Q0D5544 fl3A23A3 SBX5601A sbx16

    pa1437h

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC = & 6427525 N E C ELECTRONICS DEI b42?S2S 0011143 S INC 98D 19143 D T *Y3 z s /u P A I 4 3 7 H PNP SILICON EPITAXIAL! POWER T R A N S I S T O R . A R R A '* LOW S P E E D ' S W I T C H I N G D A R L I N G T O N ) DESCRIPTION , The ^PA1437H Is an array of four darlington power transistors. It is


    OCR Scan     		PDF PA1437H b427S25

    PACKAGE PANASONIC

    Abstract: AN90B01S DIP018-P transistor B42 AN90B22 AN90B60
    Text: General Purpose Linear ICs I Transistor Arrays >AN90B00/S Series V çe = 2 4 V , Iç =25m A (Note) Pin numbers in □ show those o f SO Package. Equivalent Circuits AN90B01S : 5 Circuits (SOP016-P-0225) è— -G aa Ä Ä AN90B10 : 8 Circuits (DIP018-P-0300E)


    OCR Scan     		PDF AN90B00/S AN90B01S OP016-P-0225) AN90B10 DIP018-P-0300E) AN90B20 AN90B20S AN90B21 PACKAGE PANASONIC AN90B01S DIP018-P transistor B42 AN90B22 AN90B60

    AN90b21

    Abstract: 90B108
    Text: General Purpose Linear ICs 1 Transistor Arrays •A N 9 0 B 0 0 /S Sériés V c e = 24V, le = 25mA (Note) Pin num bers in □ show those of SO Package Equivalent C ircuits AN 90B 01S : 5 Circuits (SO - 16D) AN 90B 10 : 8 Circuits (18 — DIP) K D — A N 90B 20 : 8 C ircuits (18 -


    OCR Scan     		PDF AN90B21 AN90B81 AN90b21 90B108

    2SC2338

    Abstract: NE567 NE56787 NE56708 NE56700 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567
    Text: NEC/ CALIFORNIA 15E D bM27M14 0 0 0 14 05 b NE56700 NE56708 NE56787 NPN SILICON HIGH FREQUENCY TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES • HIGH GAIN BANDWIDTH PRODUCT PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 25 VCEO Collector to Emitter Voltage


    OCR Scan     		PDF b427414 T-31-21 NE56700 NE56708 NE56787 NE567 2SC2338 NE56787 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567

    DTC124EK

    Abstract: DTC124EK equivalent b42 transistor
    Text: DTC124EK NPN Digital Transistor -I 1 u I with built-in bias resistor. This allows inverter circuit con­ figuration without external resistors for input. 3 - 0 .1 5 - > The pin configuration is the following: rin 1 = Collector/OUT 1.3 18+0 2 bottom view


    OCR Scan     		PDF DTC124EK O-236 DTC124EK DTC124EK equivalent b42 transistor

    photo transistor application

    Abstract: PH108 "Photo Interrupter" cd photo detector SE308 photo transistor high current photo interrupter PHOTO SENSOR of application
    Text: N E C ELECTRONICS INC 3GE J> • b4a?52S OOETSTB T ■ PHOTO TRANSISTO R PH108 PHOTO TRA N SISTO R DESCRIPTION The PH 108 is a photo transistor in a plastic molded package, and very suitable for a detector of a photo interrupter with combination of the SE308.


    OCR Scan     		PDF 002clS PH108 PH108 SE308. Ta-25 Xp-940 T-41-61 photo transistor application "Photo Interrupter" cd photo detector SE308 photo transistor high current photo interrupter PHOTO SENSOR of application

    30E Transistor

    Abstract: PH107 b42 transistor photo transistor
    Text: N E C ELEC TR ON IC S INC 30E D b457S25 0 G 2 tìS,ìl S • PHOTO TRANSISTOR PHI 07 D A R LIN G T O N PHOTO T R A N S IS T O R The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM E N S IO N S and very suitable for a detector of a photo interrupter.


    OCR Scan     		PDF b457S25 PH107 Vce-10 ic-10 PH107 T-41-63 30E Transistor b42 transistor photo transistor

    Untitled

    Abstract: No abstract text available
    Text: FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2907 - 2B FMMT2907A - 2F FMMT2907R - 4P FMMT2907AR - 5P ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF FMMT2907 FMMT2907A FMMT2907 FMMT2907A FMMT2907R FMMT2907AR 200fts.

    SE304

    Abstract: PHOTO TRANSISTOR current to voltage PH103 T-41-63 transistor TAG 854
    Text: N E C ELEC TR ON IC S INC 30E I • 1.427555 OOBISftl 2 ■ T -* ll-¿ 3 / PHOTO T R A N S IS T O R PH103 D A R L IN G T O N PH O TO T R A N S IS T O R The PH 103 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM E N S IO N S


    OCR Scan     		PDF b427525 PH103 Ta-25 VCE-10 b427S2S T-41-63 ti4E7525 PH103 SE304 PHOTO TRANSISTOR current to voltage T-41-63 transistor TAG 854

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . SGS-1H0MS0N SD5000 ’ EL[ RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS PRELIM INARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION P out = 1.5 W MIN. WITH 9.5 dB GAIN


    OCR Scan     		PDF SD5000 S10A015 SD5000 007Qfllfl

    2N2369A

    Abstract: 2n2369a philips TU-T2
    Text: N AMER PHILIPS/DISCRETE bTE bbSBTBl DDEÔDT? ?Db WM APX 11 2N2369A | i SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope primarily intended for high-speed saturated switching and high frequency amplifier applications. QUICK REFERENCE DATA


    OCR Scan     		PDF bbS3T31 2N2369A 10fiF 2N2369A 2n2369a philips TU-T2

    BFR29

    Abstract: mosfet vn 10
    Text: 7110â2b DQb7b21 a?T • P H I N BFR29 N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope w ith the substrate connected to the case. It is intended fo r linear applications in the audio as well as the i.f. and v.h.f. frequency region, and in


    OCR Scan     		PDF DDb7b21 BFR29 BFR29 mosfet vn 10

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE J> m bbSB'lBl DDEfiOT? ?Qb « A P X 2N2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope prim arily intended for high-speed saturated switching and high frequency am plifier applications. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF 2N2369A 7Z79604 7Z79606

    MRF317

    Abstract: transistor MRF317
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


    OCR Scan     		PDF Carrier/120 MRF317 transistor MRF317

    RZB06050W

    Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476
    Text: P h ilip s S e m icon d u ctors Prelim inary sp ecification NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design


    OCR Scan     		PDF RZB06050W FO-57C 711Dfi2fci T-33-09 RZB06050W transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476

    transistor B42

    Abstract: No abstract text available
    Text: ^ -3 3 - 0 1 Philips Sem iconductors NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal Input prematching networks allow an easier design of circuits


    OCR Scan     		PDF RZB06050W 711DfiEti 711Dfl2b transistor B42