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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC -CDIODES/OPTOD- i ^34 6 3 6 7 2 5 5 M O T O R O L A SC DlT|b3b75SS 003ÛE15 b 1 ~ DIODES/OPTO 34C 38 21 2 D MICRO-T (continued) MMT2369 — NPN SWITCHING TRANSISTOR • NPN silicon annular transistors for low-current, high-speed switching applications.


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    PDF b3b75SS MMT2369 MMT2369

    MCR70

    Abstract: No abstract text available
    Text: MOTOROLA SC DIODES/OPTO b4E D • b3b75SS DOßbDßH blT «MOT? MCR70-( )A Series MCR71 Series Silico n Controlled R ectifiers Reverse Blocking Triode Thyristors . . . designed for overvoltage protection in crowbar circuits. • Glass-Passivated Junctions for Greater Parameter Uniformity and Stability


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    PDF b3b75SS MCR70-I MCR71 MCR70-( MCR70

    5SMC22A

    Abstract: 5SMC33A MOTOROLA 824 39A GFM 16A 5SMC24A MOTOROLA 727 36A ISMC5.0AT3 5SMC24AT3 GEZ DIODES 5SMC39A
    Text: MOTOROLA SC DIODES/OPTO b4E D • b3b75SS 00fl53t,b 45T SECTION 4.1.4 DATA SHEETS TRANSIENT VOLTAGE SUPPRESSORS — continued Section 4.1.4.2 Surface Mounted — continued SECTION 4.1.4.2.3 1500 WATT PEAK POWER MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS


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    PDF b3b75SS 00fl53t 1SMC78AT3 5SMC91AT3 L3b7255 00fl53b7 5SMC68AT3 5SMC75AT3 5SMC82AT3 5SMC22A 5SMC33A MOTOROLA 824 39A GFM 16A 5SMC24A MOTOROLA 727 36A ISMC5.0AT3 5SMC24AT3 GEZ DIODES 5SMC39A

    MCR3918

    Abstract: motorola opto scr Thyristor welder
    Text: MOTOROLA SC DIODES/OPTO 3=iE D E3 b3b75SS Silicon ControSSed Rectifiers Reverse B lo c k in g Triode T h y risto rs . designed for industrial and consum er applications such as power supplies, battery chargers, temperature, motor, light and welder controls.


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    PDF MCR3818- MCR3918-I MCR3918 motorola opto scr Thyristor welder

    MCR5167

    Abstract: 2N5168 thyristor AT 505 S 12 2N5168-2N5171 2N5169 2N5171 motorola opto scr 2N5171 Scr 2N5170 MCR5166
    Text: MOTOROLA SC DIODES/OPTO 3=iE » Q b3b75SS DOSSbbM fl 5 1 N O T ? T - X B ' - I S 2N 5168 thru 2N 5171 M C R 5164 thru M C R 5167 S ilic o n C o n tr o lle d R e ctifie rs R everse B lo ck in g T rio d e T h y risto rs . . . designed for industrial and consumer applications such as power supplies,


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    PDF b3b72SS MCR5164, 2N5168 MCR5165, 2N5169 MCR5166, 2N5170 MCR5167, 2N5171 MCR5167 thyristor AT 505 S 12 2N5168-2N5171 motorola opto scr 2N5171 Scr MCR5166

    1N4742A 12 volt zener diode

    Abstract: MZPY12 MZPY47 BZX85C51 MOT zener diode, t2 diode zener 1n4742a MZPY24 MZPY15 MZPY13 MZPY33
    Text: riOTOROLA SC D I O D E S / O P T O D b4E • b3b75SS 00fl5L*CH b7S ■ SECTION 4.2.4 DATA SHEETS ZENER VOLTAGE REGULATOR DIODES — continued Section 4.2.4.1 Axial Leaded — continued SECTION 4.2.4.1.2 1-1.3 WATT DO-41 GLASS MULTIPLE PACKAGE QUANTITY (MPQ)


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    PDF b3b75SS DO-41 1N4728A 1N4764A BZX85C3V3 BZX85C100 M-ZPY100 L3b7255 1N4742A 12 volt zener diode MZPY12 MZPY47 BZX85C51 MOT zener diode, t2 diode zener 1n4742a MZPY24 MZPY15 MZPY13 MZPY33

    2N4260

    Abstract: No abstract text available
    Text: MOTOROLA SC ~34 OIODES/OPTOJ 6367255 MOTOROLA SC »E|b3b75SS <DIODES/OPTO □ 0 3 7 cn t , 34C 37996 t. | r-*7-/3 SILICON SMAf .L-SIGNAL TRANSISTOR DICE continued) 2C4261 DIE NO, — PNP LINE SOURCE — DMB265 This die provides performance similar to that of the following device types:


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    PDF b3b75SS DMB265 2C4261 2N4260 2N4261 MM4261A* MMT4261

    High Speed Switches

    Abstract: MOTOROLA LINEAR HF
    Text: M O T O R O L A SC -CDIODES/OPTOJ j 6367255 MOTOROLA SC 34 b3b75SS CDIODES/O PTO 34C QDSflOb^ 38069 D -ip , ^ 3 SILICON RF TRANSISTOR DICE continued) 2C5947 DIE NO. — NPN LINE SOURCE — RF502.80 & This die provides performance equal to or better than that of


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    PDF b3b75SS RF502 2C5947 2N5947 High Speed Switches MOTOROLA LINEAR HF

    UJT 2N4871

    Abstract: 2N4871 UJT 2N4870 2N4871 motorola 2N4870 ZN4871 motorola eb20 data 2n4870 transistor 2n4871 transistor 2n4870
    Text: MOTOROLA SC DI OD ES /O PT O 3TE D m b3b75SS DDflEtiSS 7 « 1 1 0 X 7 N O T R E C O M M E N D E D FOR N EW D E S IG N S PN U n iju n c tio n Transistors Silicon Unijunction Transistors T-37-Jll| 2 IM 4 8 7 0 2N 4871 . . . . designed for pulse and timing circuits, sensing circuits, and thyristor trigger


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    PDF T-37-ai 2IM4870 2N4871 O-226AAÃ b3b7255 2IM4870 V82B1. UJT 2N4871 2N4871 UJT 2N4870 2N4871 motorola 2N4870 ZN4871 motorola eb20 data 2n4870 transistor 2n4871 transistor 2n4870

    MBR140P

    Abstract: BR115P MBR130P MBR120P mbr115
    Text: MOTOROLA SC -CDIODES/OPTO> 15E D 1 b3b75SS D07T573 1 T -0 3 MBR115P 1N5817 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA SEM ICONDUCTOR TECHNICAL DATA A X I A L L E A D R E C T IF IE R S . . . employing the S ch o ttky Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry features epitaxial


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    PDF b3b75SS D07T573 MBR115P 1N5817 1N5818 MBR120P 1N5819 MBR130P MBR140P MBR150, MBR140P BR115P mbr115

    MMT2369

    Abstract: No abstract text available
    Text: MOTOROLA SC -CDIODES/OPTOJ ^34 DlT|b3b75SS 003ÛE15 b 1 ~ 34 c 38212 6 3 6 7 2 5 5 MO TO R O L A SC DIODES/OPTO D "p’Z S -U MICRO-T (continued) MMT2369 — NPN SWITCHING TRANSISTOR • NPN silicon annular transistors for low-current, high-speed switching applications.


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    PDF b3b75SS MMT2369-NPN MMT2369 MMT2369

    2n4853

    Abstract: 2N4852 2N4851 motorola thyristor 339 UJT 2N4851 transistor 2n4852 motorola eb20 2N48 2N485 2N1851
    Text: MOTOROLA SC I DXODES/ÔPTO 2SE D • b3b75SS QQÔQ^EG mT-37&#39;% I 1 NOT RECOMMENDED FOR NEW D ESIG N S 2N4851 thru 2N4853 PN U nijunction Transistors Silicon Unijunction Transistors . . . designed for pulse and tim ing circuits, sensing circuits, and thyristor trigger


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    PDF b3b75SS 2N4851 2N4853 2A-01 2N4851 2N4853 T-31-11 2N4852 motorola thyristor 339 UJT 2N4851 transistor 2n4852 motorola eb20 2N48 2N485 2N1851

    Untitled

    Abstract: No abstract text available
    Text: 34 M O T O R O L A SC { D I O D E S / O P T O } 6367255 MOTOROLA SC üF|b3b75SS 34C D IO DES/OPTO 0D 3 f l B3 M 38234 S D 7^ 3/-/7 MICRO-T (continued) MMT4261 — PNP RF TRANSISTOR • designed for high-speed, low-level switching applications, where high-density packaging is required


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    PDF b3b75SS MMT4261

    MPS-6544

    Abstract: MPS6544 MPSH20 MPS6540
    Text: MOTOROLA SC -CDIODES/OPTO 6367255 MOTOROLA SC 34 ] F|b3b75SS 003Ö017 ñ | ~ DIODES/OPTO) 34C 38017 r-3 / -/ ? SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) MPSC6540 DIE NO. — NPN LINE SOURCE — DEL627 This die provides performance similar to that of the following device types:


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    PDF b3b75SS DEL627 MPS6540 MPS6544 MPS6545 MPS6567 MPSH20 MPSH37 MPSC6540 MPS-6544

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC DIODES/OPTO 2SE D b3b72S5 0001161 5 T -à f-n MCR&164-67 (See 2N51681 Thyristors f e » '- - 4 ^ d S i Silicon Controlled Rectifiers M CR6200 S6210 S6 2 2 0 Series . . . designed for industrial and consumer applications such as power supplies,


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    PDF b3b72S5 2N51681 CR6200 S6210 MCR6200, S6210, S6220

    Untitled

    Abstract: No abstract text available
    Text: 4bE D B Order this data sheet by MC75172B/D b3b7SS 2 G0fi72Sfl 2 C3M0T4 MOTOROLA MC75172B MC751743 SEMICONDUCTOR TECHNICAL DATA MOTOROLA SC L O G I C Advance Information QUAD ElA-435 Line Drivers with Three-State Outputs 'T - ? ^ q - S '- o Ç QUAD EIA-485 LINE DRIVERS


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    PDF MC75172B/D G0fi72Sfl MC75172B MC751743 ElA-435 EIA-485 MC75172B/174B EIA-422-A,

    SOT23 6pin MARKING 3F

    Abstract: marking 3f 6pin MBR7535 MBR7545
    Text: MBR7535 MBR7545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R 75 45 is a M o to rola P referre d D e v ice Switchmode Power Rectifiers S C H O T T K Y B A R R IE R R EC TIFIER S . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


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    PDF MBR7535 MBR7545 DO-35 SOT23 6pin MARKING 3F marking 3f 6pin MBR7545

    Thyristor TAG

    Abstract: thyristor TAG 20 600 2n6342a TAG thyristor thyristor TAG 800 thyristor TAG 20 800
    Text: MOTOROLA SC DIODES/OPTO b4E D • b3b7BSS 0065^36 M0T7 TAG 2N6342A thru 2N6345A T riacs S ilic o n Bidirectional Triode Thyristors . . . d e s ig n e d p rim a rily fo r fu ll-w ave ac control applications, su c h a s light d im m e rs, m o to r co ntrols, h eating c o n tro ls a n d p ow e r su p p lie s; o r w h e re v e r fu ll-w ave silicon


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    PDF 2N6342A 2N6349A Thyristor TAG thyristor TAG 20 600 TAG thyristor thyristor TAG 800 thyristor TAG 20 800

    1N5825

    Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
    Text: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


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    PDF 1N5823 1N5824 1N5825 1N5825 diode 1N5825 N5824 1n6823 marking Bq sot23 1N5824 ON

    M 4 3171 opto

    Abstract: 9571 gh opto 3171 MBR6545 3171 opto SOT223 6 pin
    Text: MOTOROLA MBR6535 MBR6545 SEMICONDUCTOR TECHNICAL DATA MBR6545 is a Motorola Preferred Device Switchmode Power Rectifiers . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.


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    PDF MBR6535 MBR6545 MBR6545 DO-35 M 4 3171 opto 9571 gh opto 3171 3171 opto SOT223 6 pin

    b745

    Abstract: B745 MOTOROLA b735 B735 MOTOROLA mbr745
    Text: MOTOROLA Order this document by MBR735/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR735 MBR745 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • •


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    PDF MBR735/D MBR735 MBR745 MBR745 -220A b3b725S b745 B745 MOTOROLA b735 B735 MOTOROLA

    74HCT240A

    Abstract: 3ya4 HCT240 HCT241 HCT244 LS240 MC54HCTXXXAJ MC74HCTXXXAN 74hct240an
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HCT240A Advance Inform ation Octal 3-S tate Inverting Buffer/ Line Driver/Line Receiver w ith LSTTL-Compatible Inputs H igh-Perform ance Silicon -G ate C M O S The M C 54/74H CT240A is identical in pinout to the LS240. This device m ay


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    PDF -T-53-07 MC54/74HCT240A LS240. HCT240A HCT244. HCT241. MC54/74HCT240A 74HCT240A 3ya4 HCT240 HCT241 HCT244 LS240 MC54HCTXXXAJ MC74HCTXXXAN 74hct240an

    MR2525L

    Abstract: CAR ALTERNATOR REGULATOR testing VW ALTERNATOR TCA 2025 b RC 70 alternator thyristor capacitive discharge ignition CAR ALTERNATOR REGULATOR 24 volt TCA 2025 MR2525R MR751
    Text: 6 3 6 7 2 55 MOTOROLA SC <D IO D E S /O P T O ST fc ) M O T O R O L A 59C 61 866 D T - / t - 23 l)ìf|fc13tI725S OOblñbb 3 MR2520L MR2525L SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 O V ER V O LT A G E T R A N S IE N T S U P P R E S S O R S


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    PDF MR2520L MR2525L 5K-10K C21I6A MR2525L CAR ALTERNATOR REGULATOR testing VW ALTERNATOR TCA 2025 b RC 70 alternator thyristor capacitive discharge ignition CAR ALTERNATOR REGULATOR 24 volt TCA 2025 MR2525R MR751

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCR25 SERIES* Advance Information “Motorola preferred devices Silicon Controlled Rectifiers SCRs 25 AMPERES RMS 400 thru 800 VOLTS Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor


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    PDF MCR25 T0-220AB b3b75SS