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    MBR140P

    Abstract: mbr130p MBR120P BR115P MBR115P 1N5817-19 J581 5819m
    Text: 1N5817 BR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA A X I A L LEAD RECTIF IERS . . . em ploying the S c h o ttk y Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry construction w ith oxide SCH OTTKY BARRIE R


    OCR Scan     		PDF 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P BR130P BR115P MBR140P 1N5817-19 J581 5819m

    MBR140P

    Abstract: BR115P MBR130P MBR120P mbr115
    Text: MOTOROLA SC -CDIODES/OPTO> 15E D 1 b3b75SS D07T573 1 T -0 3 BR115P 1N5817 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA SEM ICONDUCTOR TECHNICAL DATA A X I A L L E A D R E C T IF IE R S . . . employing the S ch o ttky Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry features epitaxial


    OCR Scan     		PDF b3b75SS D07T573 MBR115P 1N5817 1N5818 MBR120P 1N5819 MBR130P MBR140P MBR150, MBR140P BR115P mbr115