b3708
Abstract: fast recovery diode 1000v 10A b37 diode DIODE 1.0A 1000V diode 1000V 10a
Text: ERB37 1.0A ( 800 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Green High reliability Voltage class Applications Cathode mark 02 Lot No.
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ERB37
ERB37
b3708
fast recovery diode 1000v 10A
b37 diode
DIODE 1.0A 1000V
diode 1000V 10a
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b37 diode
Abstract: fast recovery diode 1000v 10A ERB37 B3708
Text: ERB37 1.0A ( 800 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Green High reliability Voltage class Applications Cathode mark 02 Lot No.
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ERB37
b37 diode
fast recovery diode 1000v 10A
ERB37
B3708
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B3708
Abstract: fast recovery diode 1000v 10A b37 diode diode marking b37 ERB37 10A800 marking b37
Text: ERB37 1.0A ( 800 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Green High reliability Voltage class Applications High speed switching
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Original
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ERB37
B3708
fast recovery diode 1000v 10A
b37 diode
diode marking b37
ERB37
10A800
marking b37
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PDF
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b37 diode
Abstract: DIODE 1.0A 1000V
Text: ERB37 1.0A ( 800 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Green High reliability Voltage class Applications Maximum ratings and characteristics
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ERB37
et-08
ERB37
b37 diode
DIODE 1.0A 1000V
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C37 diode
Abstract: C37-10 diode diode 10kv 5KV DIODE ESJC37-10 transistor c37 ESJC37 ESJC37-05 ESJC37-08 high voltage diode 100 kv
Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTEGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark
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ESJC37
5kV/540mA
8kV/410mA
10kV/310mA
ESJC37
24min
24min.
ESJC37-05
ESJC37-08
ESJC37-10
C37 diode
C37-10 diode
diode 10kv
5KV DIODE
ESJC37-10
transistor c37
ESJC37-05
ESJC37-08
high voltage diode 100 kv
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PDF
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C37 diode
Abstract: C37 high voltage diode HIGH VOLTAGE DIODE 10kv transistor c37 high voltage diode 100 kv 8kv DIODE ESJC37
Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTEGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark
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Original
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ESJC37
5kV/540mA
8kV/410mA
10kV/310mA
ESJC37
24min
24min.
ESJC37-05
ESJC37-08
ESJC37-10
C37 diode
C37 high voltage diode
HIGH VOLTAGE DIODE 10kv
transistor c37
high voltage diode 100 kv
8kv DIODE
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BB505B
Abstract: BB505G BB505 diode 505 marking code BB Diode BB diode 50-5G Q62702-B37 KJ01 F A 505
Text: SIEMENS Silicon Variable Capacitance Diodes BB 505 B BB 505 G • For UHF and VHF tuners • Not for new design Type BB 505 B Marking Ordering Code Pin Configuration Package1 orange Q62702-B37 DO-35 DHD Q62702-B270 BB 505 G °o - - Kk lr EHA07-d£o Maximum Ratings
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Q62702-B37
DO-35
Q62702-B270
EHA0700I
0235bOS
fl535bD5
fi235b05
BB505B
BB505G
BB505
diode 505
marking code BB Diode
BB diode
50-5G
KJ01
F A 505
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PDF
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B37 zener diode
Abstract: SOD-18 BZX70 philips zener diode c24 b37 zener philips bzx70 zener diode c43 DIODE BZX70 philips zener diode BZX70-C75 philips zener diode c18
Text: BZX70 SERIES M A IN TEN A N C E TYPE JiJaE_] PH IL IP S INTERNATIONAL • 711D6Sb QG41b7b b37 M P H I N REGULATOR DIODES A range o f diffused silicon diodes in plastic envelopes, intended fo r use as voltage regulator and transi ent suppressor diodes in medium power regulators and transient suppression circuits.
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BZX70
711065b
QG41b7b
BZX70-C7V5
BZX70-C75.
OD-18.
B37 zener diode
SOD-18
philips zener diode c24
b37 zener
philips bzx70 zener diode c43
DIODE BZX70
philips zener diode
BZX70-C75
philips zener diode c18
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PDF
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Untitled
Abstract: No abstract text available
Text: urm LINEAR TECHNOLOGY CORP 53E D • 5Sia4bfl 000b3G3 b37 « L T C 7 - 7 9 - c 7-«2o LT1126/LT1127 TECHNOLOGY D ual/Q uad D ecom pensated Low Noise, High Speed Precision O p Amps D€SCMPTIOn F€ATUR€S ■ 100% Tested Low Voltage Noise ■ Slew Rate ■ Galn-Bandwidth Product
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OCR Scan
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000b3G3
LT1126/LT1127
LT1126
LT1127
LT1124
LT1125
LT1124/LT1125.
LT1126/LT1127
LT112
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Untitled
Abstract: No abstract text available
Text: SIE D • Ö13bb71 DD037S2 b37 « S E K G SEMIKRON SEMIKRON INC Maximum Ratings VcEVsus lc = 1 A ,V be = - 2 V V V V V A 300 150 8 1000 - 4 0 . . . + 150 - 4 0 . . . + 125 2500- A A A W °C °C V o II O D. C. tp = 1 ms Ib Tease —25 °C Ptot Tvj Tstg Visol
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13bb71
DD037S2
T-33-35
l3bb71
QQD37SS
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PDF
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TGA8061SPCA
Abstract: TGA8061
Text: TEXAS INSTR L I N / I N T F C SOE D • Ô T b l T E H G D Ô Ô 3 7 8 b37 « T i m TGA8061-SPC-A PACKAGED MONOLITHIC 100-MHz TO 3.5-GHz 13 0 \ LOW-NOISE AMPLIFIER D3945, OCTOBER 1991 17-dB Gain With 3-dB Noise Figure 2:1 Input/Output SWR Unconditionally Stable
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TGA8061-SPC-A
100-MHz
D3945,
17-dB
TGA8061-SCC
10-lead
PacA8061
GMGS024A
TGA8061SPCA
TGA8061
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BXY 42BA-7 Silicon PIN Diode • Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B XY 42BA-7 27 Q62702-X160 Pin Configuration * ° H<3-EHA07007 Package1 Cerec-X Maximum Ratings
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42BA-7
Q62702-X160
3--------EHA07007
0Qbb740
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PDF
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 30MF30 30MF40 30MF30R 30MF40R 3 3 A /3 0 0 ~ 4 0 0 V /trr : 60nsec FEATURES ° Hermetically Sealed Case ° High Reliability Device Ultra - Fast Recovery ° Low Forward Voltage Drop 8 Low Power Loss, High Efficiency ° High Surge Capability
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30MF30
30MF40
30MF30R
30MF40R
60nsec
30MF30
30MF30R
00022n
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PDF
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Untitled
Abstract: No abstract text available
Text: DAN209S DAP209S DAN215 DAP215 Diode, array, high-speed switching, leaded In these single packages, there are two diodes as shown in the circuit diagrams. They are available in different small envelopes. Dimensions Units : mm DAN209S, DAP209S (SPT) 4±0 2
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DAN209S
DAP209S
DAN215
DAP215
DAN209S,
DAN215,
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4B31
Abstract: ESJA82-14A 0MO2
Text: -L 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA82-14A
D00Ha30
ESJA82-CDA
4B31
0MO2
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PDF
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Untitled
Abstract: No abstract text available
Text: T R A N S IS T O R M O D U LE QCA150AA100 UL;E76102 M Q C A 1 5 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. Th e mounting base o f the module is electrically isolated
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QCA150AA100
E76102
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Untitled
Abstract: No abstract text available
Text: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA82-14A
0004B31
ESJA82-ODA
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Untitled
Abstract: No abstract text available
Text: 5HE D HITACHI / OPTOELECTRONICS HHIbSD-S DG121ÔS flbM « H I T M • H E 1 301 S U /M L/1 K InGaAsP IRED T The HE1301SG/M L/TR are 1.3 (J.m band infrared light emitting diodes for use as the light sources in opti cal fiber communications. They provide a high speed response due to their double heterojunction InGaAsP structure.
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DG121Ã
HE1301SG/M
01jtical
HE1301SG/ML/TR
HE1301ML)
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PDF
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Untitled
Abstract: No abstract text available
Text: S i GEC P L E S S E Y augustes SE M IC OND UC TOR S DS4168-2.3 DS1107SG RECTIFIER DIODE KEY PARAMETERS VRRM 4000V lF AV, 870A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.
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DS4168-2
DS1107SG
DS1107SG40
DS1107SG39
DS1107SG38
DS1107SG37
DS1107SG36
DS1107SG35
DD2B31M
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PDF
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Relief Valve Hydraulics
Abstract: MQG4 6200-N8 CORT MR513 wtek MCC37 09N40 remote rack plc5 communicate PanelView Plus with plc 5
Text: R a tN -B R R D ^ Force Control Module C at. N o . 1 T U - Q H User M anual I ^ M M É iiÉ Ë É É iiM É ! HHI V • Hh hH H H Blilfilt m W ÈÊtSÈ wÊËËK lÉ »» W *i«r ît^æ .„w *fes* s « » « ii:^ ^ » îr & ï^ . Important User Information
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1771-QH)
PN955112-07
Relief Valve Hydraulics
MQG4
6200-N8
CORT
MR513
wtek
MCC37
09N40
remote rack plc5
communicate PanelView Plus with plc 5
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PDF
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ESJA23-04
Abstract: diode A23
Text: ESJA23-04 3 . 6 k V *± /j'« a * * * - k : Outline Drawings HIGH VO LTAGE SILICO N DIODE ESJA23& , r i W ' d z L - ? • ESJA23 is high reliability resin molded type high voltage silicon diode for distributor-less automobile ignition system which is sealed a multilayed mesa type silicon chip by epoxy
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ESJA23-04
ESJA23&
ESJA23
diode A23
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH-CUBRENT HALF-BRIDGE MOTOR DRIVER Designed for use as a general-purpose motor driver, the UDN and UDQ2943Z half-bridge drivers combine high-current sink and source drivers with logic stages, level shifting, diode transient protection, and a voltage regulator for single-supply operation. Capable of operating
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UDQ2943Z
05D433Ã
WP-024
EP-053
0SD433A
EP-054
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PDF
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ERR81-004
Abstract: No abstract text available
Text: ERR 81 3000A ^ a ,y h + —^ ' * l) 7 y 3j-—K : Outline Drawings Units mm SCHOTTKY BARRIER DIODE Features • High current • V S it flia Flat package : Applications • * * V K » « * d l* S 3 fc • Spot w elders 72±2 Plating use power supplies 5MAX.
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err81
ERR81-004
50HzlFÃ
ERR81-004
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PDF
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n Fast Recovery Rectifier Diodes If bm s maximum values for continuous operation V rsm V rrm 260 A Ifav (sin. 180; Tease = 85 °C) 1000 1200 168 A trr = 500 ns trr = 800 ns $ V 800 160 A SKN SKN SKN SKN SKN SKN 135 136 135 136 135 136 $ SKR
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A13bb71
N135F
SO-29
DQ-205
fll3bb71
000b37E
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