BEL 100N TRANSISTOR PIN DIAGRAM
Abstract: AMD 586 embedded BEL 100N TRANSISTOR 111S3 BEL 100N EPE6047S 80C25 80C26 PT4152 transistor 5bt
Text: 80C26 SEEQ CMOS EtflBfflGt T e c h n o lo g y , In c o r p o r a te d Interface Adapter in 28L Package P R E LIM IN A R Y O ctober 1994 SEEQ AutoDUPLEX Designation S y m b o l » id e n tifie s p ro d u c t a s A u to D U P L E X d e v ic e • P rovides A u to D U P L E X TU D etect F u nction fo r F u ll
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80C26
10Base-T
10Base-5,
10Base-2,
B0C25
ofAUI/10Base-T
MD400143/-
00D4bM0
BEL 100N TRANSISTOR PIN DIAGRAM
AMD 586 embedded
BEL 100N TRANSISTOR
111S3
BEL 100N
EPE6047S
80C25
80C26
PT4152
transistor 5bt
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Untitled
Abstract: No abstract text available
Text: 1. SCOPE This specification provide the' ratings and the requirements for high voltage silicon diode ESJA82-14A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA82-14A
0004B31
ESJA82-ODA
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Untitled
Abstract: No abstract text available
Text: X X28HC256 256K p r 32K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 70ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V p p Control
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X28HC256
00Q4h35
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Untitled
Abstract: No abstract text available
Text: Lattice ispLSr and pLSI‘ 2032LV Semiconductor ! : ; Corporation 3.3V High Density Programmable Logic Features Functional Block Diagram • 3.3V LOW VOLTAGE 2032 ARCHITECTURE — Interfaces With Standard 5V TTL Devices — 60 mA Typical Active Current — Fuse Map Compatible with 5V ispLSI/pLSI 2032
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2032LV
2032LV
2032LV-60LJ
2032LV-80LT44
2032LV-80LJ
44-Pin
2032LV-60LT44
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Untitled
Abstract: No abstract text available
Text: S ta n d a r d P r o d u c t PMC I PMC-Sierra, Inc. I / 1 ^ * ISSUE 4 P M 8313D 3M X M13 MULTIPLEXER FEATURES • Integrates a full featured M13 multiplexer and DS-3 framer in a single monolithic device. • Supports the M23 or C-bit parity DS3 formats. • Supports the M12 or G.747 formats allowing DS1 or E1 signals to be multiplexed
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8313D
G47S1
8313D3M
0GD47S2
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3113U
Abstract: 50g k hall ugn 3113u HALL SENSOR ST200G Hall Effect 03E UGN3113 UGN3113U
Text: S PR AG UE/ SEM I CON D GROUP 03E; 8 5 1 4 0 1 9 S P R A G U E / S E M I C O N D S / ICS » _ • 5513650 D0 0 Mb3 D 7 ■ ~ 03E 04 63 0 D UGN-3113T AND UGN-3113U SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES U G N -3113T AND U G N -3113U HALL EFFECT SWITCHES
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UGN-3113T
UGN-3113U
-3113T
-3113U
3113U
50g k hall
ugn 3113u HALL SENSOR
ST200G
Hall Effect 03E
UGN3113
UGN3113U
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