MBRS340
Abstract: on smc b34 B0 B34
Text: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Top Mark: B34 3.0 Schottky Power Rectifier Absolute Maximum Ratings*
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MBRS340
D0-214AB)
MBRS340
on smc b34
B0 B34
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MBRS340
Abstract: No abstract text available
Text: MBRS340 MBRS340 Features Compact surface mount with J-bend leads SMC 3.0 Watt Power Dissipation package 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Mark: B34 Schottky Rectifier Absolute Maximum Ratings*
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MBRS340
D0-214AB)
MBRS340
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FAIRCHILD MBRS340
Abstract: MBRS340
Text: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Mark: B34 Schottky Rectifier Absolute Maximum Ratings*
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MBRS340
D0-214AB)
FAIRCHILD MBRS340
MBRS340
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b34 marking
Abstract: Mark B34 FAIRCHILD MBRS340 MBRS340
Text: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Mark: B34 Schottky Rectifier Absolute Maximum Ratings*
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MBRS340
D0-214AB)
MBRS340
b34 marking
Mark B34
FAIRCHILD MBRS340
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ON B34
Abstract: MBRS340 b34 surface mount diode b34 B34 on 001 B34 b34 datasheet FAIRCHILD MBRS340 CBVK741B019 F63TNR
Text: MBRS340 MBRS340 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denote Cathode Top Mark: B34 3.0 Schottky Power Rectifier Absolute Maximum Ratings*
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MBRS340
D0-214AB)
ON B34
MBRS340
b34 surface mount
diode b34
B34 on
001 B34
b34 datasheet
FAIRCHILD MBRS340
CBVK741B019
F63TNR
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smd rgb led PLCC4
Abstract: VLMRGB343-ST-UV-RS
Text: VLMRG B34 3. Se r ie s FEATURES • Black surface • AEC-Q101 automotive qualified • Qualified according to JEDEC moisture sensitivity level 2 • Compatible with IR reflow soldering • Environmentally friendly; RoHS-compliant • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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AEC-Q101
2002/95/EC
2002/96/EC
VMN-PT0089-0712
smd rgb led PLCC4
VLMRGB343-ST-UV-RS
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MBRS340
Abstract: 3M Philippines 616 3g diode b34 CBVK741B019 F63TNR F924 T0012 do214ab packaging reels date code
Text: S3A-S3M S3A - S3M Features • Low profile package. • Glass passivated junction. SMC/DO-214AB COLOR BAND DENOTES CATHODE 3.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings* Symbol IF AV TA = 25°C unless otherwise noted Parameter Value Units
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SMC/DO-214AB
MBRS340
3M Philippines
616 3g
diode b34
CBVK741B019
F63TNR
F924
T0012
do214ab
packaging reels date code
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b34 surface mount
Abstract: MBRS340 diode b34 CBVK741B019 F63TNR F924 MBRS320 T0012 ON B34 AA SMC
Text: MBRS320 MBRS320 Features • Compact surface mount with J-bend leads SMC • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV SMC (D0-214AB) Color Band Denotes Cathode Top Mark: B32 3.0 Schottky Power Rectifier Absolute Maximum Ratings*
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MBRS320
D0-214AB)
b34 surface mount
MBRS340
diode b34
CBVK741B019
F63TNR
F924
MBRS320
T0012
ON B34
AA SMC
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FAIRCHILD MBRS340
Abstract: MBRS340 diode b34 CBVK741B019 F63TNR F924 T0012 ON B34 strain smart
Text: ES3A - ES3D ES3A - ES3D Features • For surface mount applications. • Glass passivated junction. • Low profile package. • Easy pick and place. • Built-in strain relief. • SMC/DO-214AB COLOR BAND DENOTES CATHODE Superfast recovery times for high efficiency.
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SMC/DO-214AB
FAIRCHILD MBRS340
MBRS340
diode b34
CBVK741B019
F63TNR
F924
T0012
ON B34
strain smart
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ON B34
Abstract: b34 diode FAIRCHILD MBRS340 diode b34 diode schottky B34 b34. device data on semiconductor DO-214AB SS32-S310 MBRS340 diode 019 b34
Text: SS32-S310 SS32 - S310 Features • Metal to silicon rectifiers, majority carrier conduction. • Low forward voltage drop. • Easy pick and place. • High surge current capability. SMC/DO-214AB COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers
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SS32-S310
SMC/DO-214AB
ON B34
b34 diode
FAIRCHILD MBRS340
diode b34
diode schottky B34
b34. device data on semiconductor
DO-214AB
SS32-S310
MBRS340
diode 019 b34
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marking code B34
Abstract: DO-214AB b34 FAIRCHILD MBRS340 gdv 64 a
Text: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less
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SMCJ170
E210467.
SMC/DO-214AB
marking code B34
DO-214AB b34
FAIRCHILD MBRS340
gdv 64 a
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BFM SMC
Abstract: b34 marking smc bem 129 gez FAIRCHILD GHM marking code B34 MBRS340
Text: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less
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SMCJ170
SMC/DO-214AB
BFM SMC
b34 marking
smc bem
129 gez
FAIRCHILD GHM
marking code B34
MBRS340
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gfx do-214ab
Abstract: FAIRCHILD MBRS340 equivalent of BFT 51 b34 diode Diode 133 B34 diode GFP AA diode smc bfk marking code B34 gex smc SMCJ11
Text: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less
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SMCJ170
E210467.
SMC/DO-214AB
gfx do-214ab
FAIRCHILD MBRS340
equivalent of BFT 51
b34 diode
Diode 133 B34
diode GFP AA
diode smc bfk
marking code B34
gex smc
SMCJ11
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XS1-L2
Abstract: L1128 XS1-L02A-QF124-C5 XS1-L02A-QF124-C4 XS1-L02A-QF124-I5 marking p1j XS1 XMOS xcore IC MARKING A60 xla0
Text: XS1-L2 124QFN Datasheet Version 1.5 Publication Date: 2010/06/16 Copyright 2010 XMOS Ltd. All Rights Reserved. XS1-L2 124QFN Datasheet 1.5 Description XMOS Link XS1-L2 I/O PLL Switch XCore1 Switch JTAG I/O JTAG XMOS Link XCore 8KBytes OTP 64KBytes SRAM
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124QFN
64KBytes
32bit
16bit
XS1-L2
L1128
XS1-L02A-QF124-C5
XS1-L02A-QF124-C4
XS1-L02A-QF124-I5
marking p1j
XS1 XMOS
xcore
IC MARKING A60
xla0
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Untitled
Abstract: No abstract text available
Text: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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MS18R3266AH0
288Mbit
32Mx18)
576Mb
32K/32ms
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MARKING CODE B82
Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
MARKING CODE B82
a87 marking
Marking b66
marking a86
MARKING B83
marking a75
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A74 marking
Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
Text: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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MS18R3266AH0
288Mbit
32Mx18)
576Mb
32K/32ms
A74 marking
a80 marking code
MS18R3266AH0-CT9
a74 marking code
diode code B74
marking A32
marking code B38
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b41 Marking
Abstract: No abstract text available
Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
b41 Marking
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A76 MARKING CODE
Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
Text: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
A76 MARKING CODE
a77 package marking
a80 marking code
marking A32
marking A45
marking code B38
MR18R162WEG0-CM8
MARKING B17
MARKING CODE B82
marking a86
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transistor marking A21
Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
transistor marking A21
a74 marking code
b82 400
B83 004
marking B44
MARKING CODE b48
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a80 marking code
Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a80 marking code
MR18R162WDG0-CM8
B83 004
marking code B38
MR18R162WDG0
MR18R162WDG0-CK8
marking A70
marking code b84
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a74 marking code
Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a74 marking code
MARKING B82
MARKING B83
a80 marking code
B11 marking code
Device marking code B12 B13 B14 B15 B16
marking A45
a64 marking code
A79 marking code
a86 diode
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a80 marking code
Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Text: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828ER
128Mb
8Mx16)
16K/32ms
a80 marking code
marking A32
marking A86
marking code B38
samsung electronics logo
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Untitled
Abstract: No abstract text available
Text: SMUUUUUFU0U01 November 30, 2000 Revision History • November 30, 2000 Modified supply current profile specifications on page 8. • October 19, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SMUUUUUFU0U01
512/576MByte
16Mx16/18
184-pin
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