x37c
Abstract: No abstract text available
Text: B@9 ,>-,4* 4WWT=?BC= $ ;B 1 ='=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ R ' AH 93 E7 5: 3 C97 R IEC7? 7 6G 6EC3 E76 - ;J /. L + ;J"]\#%[Oe )'+1 W /, \9 * U%af^ R # ;9: B73 = 5FCC7@ E53 B3 4 ;> ;EJ R , F3 > ;8;76 for industrial grade applications 3 55AC6; @ 9 EA %
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S1C33L17
Abstract: S1C33L17D S1C33L17F Inter-ICs dot led display large size with circuit diagram LOT code stmicroelectronics S1C33L01 S1C33L17B 2451c BT 342 project
Text: S1C33L17 Technical Manual CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33L17 Technical Manual S1C33L17 Technical Manual SEMICONDUCTOR OPERATIONS DIVISION EPSON Electronic Devices Website http://www.epson.jp/device/semicon_e Document code: 411520600 Fist issue June, 2008 C B
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S1C33L17
32-BIT
S1C33L17
S1C33L17D
S1C33L17F
Inter-ICs
dot led display large size with circuit diagram
LOT code stmicroelectronics
S1C33L01
S1C33L17B
2451c
BT 342 project
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OZ960
Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED
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MPC7450
OZ960
22B4 diode ZENER
c5763
C1904
7A3 zener diode
UL796
258C5
58A5
zener diode 7A3
9A2 zener diode
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oz960
Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO
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MPC7450
oz960
16b3 zener diode
Zener 13B3
zener diode 7A3
SN0210
6R-P10
16B1 zener diode
Zener Diode 13B3
q59 apple
C5763
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r9824
Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16
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1/10W
XW9902
XC9901
50R28
U9500
XW9903
25MIL
10MIL
R9915
r9824
R9825
HT 1200-4 smd
L9707
HT 1200-4
r9810
L9708
U5400
r2561
C3523
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R9810
Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22
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1/10W
XW9902
XC9901
50R28
U9500
XW9903
25MIL
10MIL
R9915
R9810
HT 1200-4 smd
r9824
HT 1200-4
c6011
L9707
L5800
c9611
C3150
ic c2335
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190540099
Abstract: B2090
Text: IO 8 MATERIAL NO. ENG. NO, LOOSE PIECE 9 0 54 0 0 6 3 I2HDX B-20 9 0 54 0 0 6 5 I4HDX B-20 90540066 9 0 54 0 0 6 9 90540070 90540090 9 0540092 9 0540094 9 0540098 B-20 -38HDX B-20 •56HDX B-20 -76HDX B-228-06HDX B-228-08HDX B-228-IOHDX B-230-IOHDX B-230- I4HDX
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-38HDX
56HDX
-76HDX
B-228-06HDX
B-228-08HDX
B-228-IOHDX
B-230-IOHDX
B-230-
B-230-56HDX
B-236-04HDX
190540099
B2090
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Untitled
Abstract: No abstract text available
Text: S D - 5 5 1 7 6 -0 0 3 2.2±0.1 aa a a a aBa a» m ¥ I E l _ B±0.1 2 .2 ± 0 .I b b b b b b b b b i E L FORM OF 30CKT. ° RECOMMENDED P .C .BOARD PATTERN DIM. R EF. agg NOTES 51146 V ' J - X I. MATES WITH : 5 IM 6 S E R IE S 2 . W K M ATERIAL 0 1 A WAFER : 5 S S ; K U v ’ - ( L C P ) U L 9 4 V - 0
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30CKT.
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lsr 3005-7
Abstract: No abstract text available
Text: BSR.USR B S R 20.U SR 20 th rou gh B S R 3 0.LSR 30 O utput power 20 W and 30 W • Input/output isolation 2.5 kVrms B.DSR , • Output overvoltage protection by second 4 kVrms (LSR, USR) Input transient suppression circuit and control circuit • Solid mechanical construction, ideal for
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30IS-7
440Hz
lsr 3005-7
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Untitled
Abstract: No abstract text available
Text: 3 & Q THIRD / NGLE PROJECTION D ± 6 .2 9 3 .8 t — x Z 5 4 -* °'cSrx 3 / = '78.74- m o .C -l 7 62 S 9 -I -2 . f -4 BSC .h -l 'c ir c u it ) ZS4* DIMENSIONS IN MM. DO N O T S C A LE PRINT i * •?- i -; ( B B ^ ±D \ te c .e m p m e ) S ^ b -O f c ir c u it )
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\25tU
30fciT
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Untitled
Abstract: No abstract text available
Text: B DATE JR f t REV. I I P3 1 D E S C R IP T IO N DON NO. fi 1 CHK. DR. $ H APPD. & s APPD. ± 0. 1 3.75 i r “ T i 11no< v it J is B ±0. 1 t 0 .4 — B 2 : 1 XXXXXXXXXX m .S .^l'/A R TIC LE LABEL XXXX XX £« (DESCRIPTION) F I - X 3 0 S S L A - H F - R 2 5 0 0
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8J110034
TB5612
-i76f
FI-X30SSU-HF-R2500
ilWS2500fSCD
FI-X30SSLA
-HF-R2500
J110034
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11H11
Abstract: No abstract text available
Text: IO SD- 19044-008 8 MATERIAL NO. ENG. NO, LOOSE PIECE 90440 37 I2HD B- 0 90440 39 B- 0 I4HD 90440 90440 90440 90440 90440 90440 90440 90440 90440 40 90440 90440 90440 90440 90440 90440 90440 72 73 74 42 6 62 63 66 67 68 80 82 84 86 BBBBBBBBB- 0 -38HD 0 -56HD
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-38HD
-56HD
-76HD
28-06HD
28-08HD
30-56HD
36-04HD
36-06HD
36-08HD
40-38HD
11H11
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4030-I6G
Abstract: No abstract text available
Text: 13 12 11 10 -CENTERLINE OF PIN IN AREA SHOWN DIM. A NOT TO VARY FROM CENTERLINE OF PIN AT DATUM CKTS. NO. OF -D- BY • D IM .B MORE THAN .0 0 8 IN ANY DIRECTION DIM. B o - SEE D E TAIL 3 (2.54±.05 .I00± .002 TYP. BETWEEN ANY TWO ( CONSECUTIVE CKTS AT DATUM
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Untitled
Abstract: No abstract text available
Text: 12 13 10 CIRCUIT S IZ E -B- DIM. B DIM. C DIM. D I3.90 9 .0 0 I2.58 I2.40 .547 .354 .495 .488 I8.90 I4.00 I7.58 I7.40 20 30 1 . 00 . 030 .35 DIM. A |0. 2 0 / . 0 0 8 IX I 40 4 • 2Z01.008 4 _t 4.2 I 1.00 I66 .039 1.79 .346 50 5.14 .202 .240 60 64 70 SEE NOTE 6
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1995/03/23olex
SDA-71436-1*
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amplificateurs operationnels
Abstract: ssv 620 CB-98 brochages equivalente Thomson-EFCIS
Text: o THOMSON-EFCIS t ec t e e t e b i 761 C ircuits Intégrés DOUBLE A M P L IF IC A T E U R S O P E R A TIO N N ELS D U A L O P E R A T IO N A L Les T E C , T E E ,T E B 1 7 6 1 sont des doubles am plific ateurs opérationnels utilisables dans de nombreuses applications.
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TEB1761
TEB1761
CB-98
CB-11)
50n-Tamb
amplificateurs operationnels
ssv 620
CB-98
brochages
equivalente
Thomson-EFCIS
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173681-2
Abstract: 25365.123.211 25325.123.211 Hartmann 221 GHW Connectors
Text: GHWmGROTI & HARTMANN '7 VERBiNDUNGSTECHNIK Flachstecktechnik 2,8 mm Flat connectors 2.8 mm 411 T Flachsteckhulsen Receptacles fur Steckerbreite 2,8 mm DIN 46330 und ahnliche Ausfuhrungen for tab width 2.8 mm DIN 46330 and similar types Typ 1 Schnttt A-B Typ
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hd64180
Abstract: 85mVG LTC1092AMJ8
Text: LTC1091/LTC1092 LTC1093/LTC1094 L in Ç A B . TECHNOLOGY ] 2, 6 and 8 Channel, 10-Bit Serial I/O Data Acquisition Systems F € flT U R € S • Programmable Features Unipolar/Bipolar Conversions Differential/Single Ended Multiplexer Configurations ■ Sample and Holds
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LTC1091/LTC1092
LTC1093/LTC1094
10-Bit
1009CAV
hd64180
85mVG
LTC1092AMJ8
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Untitled
Abstract: No abstract text available
Text: blOBEOl 001043^ b?0 24LC41A M ic r o c h ip 1K/4K 2.5V Dual Mode, Dual Port I2C Serial EEPROM PACKAGETYPE FEATURES Single supply with operation down to 2.5V Completely implements DDC1™/DDC2™ interface for monitor identification, including recovery to
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24LC41A
bl03201
DS21176A-page
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SCI7631C
Abstract: No abstract text available
Text: 3 ASSPs -8 Power Supply ICs ISwitching regulators P a rt n u m b e r Input voltage V-typ. Output voltage (V) Oscillator Voltage detection Power-on dear Battery backup OmxrtwlBge tem ffippte noise suppression input perature SCI7631C ca DIP-8pin 2.00 SCI7631M ca
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SCI7631C
SCI7631M
SCI7631CHA
SCI7631
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6EA8
Abstract: 6EA8 tube K556 general electric
Text: 6EA8 6EA8 ET-T1480A Page 1 12-59 TRIODE-PENTODE FOR VHF CONVERTER APPLICATIONS ^ T U B E S DESCRIPTION AND RATING The 6EA8 is a miniature tube which contains a sharp-cutoff pentode and a triode in one envelope. Each section has a separate cathode and is electrically
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K-5561I-TDI7-6
ET-T1480A
K-5561
6EA8
6EA8 tube
K556
general electric
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PK-70873-0607
Abstract: No abstract text available
Text: 13 12 10 DIM . A DIM. B DIM . C DIM , D 20 13.90 .547 18.90 .744 23.90 .94 1 28.90 1.138 33.90 1.335 35.90 1.413 38.90 1.53 1 43.90 1.728 45.90 1.807 48.90 1.925 53.90 9.00 .354 14.00 .55 1 19.00 .748 24.00 .945 29.00 1.142 31.00 12.58 .495 17.58 .692 22.58
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SDA-71436-1*
PK-70873-0607
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sj 2258
Abstract: No abstract text available
Text: 10 13 4 :iRcun SIZE D IM . A D IM I3.90 .547 I8.90 .744 23.90 .941 28.90 1.138 33.90 1.335 35.90 1.413 38.90 1.531 43.90 1.728 45.90 1.807 48.90 1.925 53.90 2.122 58.90 2.319 63.90 2.516 ou jU TOP OF HOUSING TO SEATING PLANE SEE NOTE 2 3 .B D IM 9.00 .354
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SDA-71436-1«
sj 2258
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I M IC RO CO M PUTERS M 37702M 4LX XX FP S IN G L E -C H IP 1 6-B IT CM O S M IC R O C O M P U T E R DESCRIPTION T h e M 3 7 7 0 2 M 4 L X X X F P is a s in g le -c h ip m ic ro c o m p u te r d e PIN CONFIGURATION TOP VIEW s ig n e d w ith h ig h -p e r fo r m a n c e C M O S s ilic o n g a te t e c h n o lo
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37702M
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Untitled
Abstract: No abstract text available
Text: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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EDI784MS
EDI784MSV
528-byte
250ms
funI784MSV
EDI784MSV50BB
ED1784MSV50FB
EDI784MSV50BB
EDI7MMSV50BC
300MW
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