A 222G
Abstract: No abstract text available
Text: Electrocomponents Series 222G Data Sheet Tactile Switch 6.0 x 3.8mm Compact Tactile Switch Features Optimized Mechanical Features • Surface mount gull-wing and J bend terminal configurations • Compatible with IR reflow and manual soldering • Variety of operating force & travel options
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UL94V-0)
A 222G
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smc d-f9p
Abstract: smc d-a73c SMC D-A73 cd 6283 ic smc d-f9n D-A73 M24 8.8 bolt smc d-j79 ROD 486 5000 circuit diagram for cd 6283
Text: Compact Cylinder Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100, ø125, ø140, ø160 ø180, ø200 With a short overall length, the space saving cylinder helps to make various jigs and equipment more compact. Variations Bore size mm
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83 fkm 592
Abstract: cd 6283 ic wiring diagram Double Acting Cylinder reed relay 3570 1301 151 d-J79 CDQ2B32-20D ECDQ2A D-J79W smc cq2b63 10 35L W1
Text: Compact Cylinder Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100, ø125, ø140, ø160 ø180, ø200 With a short overall length, the space saving cylinder helps to make various jigs and equipment more compact. Variations Bore size mm
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double acting cylinder
Abstract: smc d-f9n SMC D-A73 D-A80H D-J79W 83 fkm 592 D-A73 CDQ2B32-20D smc d-j79 reed relay 3570 1301 151
Text: Compact Cylinder Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100, ø125, ø140, ø160 ø180, ø200 With a short overall length, the space saving cylinder helps to make various jigs and equipment more compact. Variations Bore size mm
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82358
Abstract: XC96 8251 intel microcontroller architecture F245B intel 82358 INTERFACING OF 8272 WITH 8086 EISA chip set 82355 ta 8271 hq intel 82355
Text: 82355 BUS MASTER INTERFACE CONTROLLER BMIC • Designed fo r use in 32-Bit EISA Bus Master Expansion Board Designs — Integrates Three interfaces (EISA, Local CPU, and Transfer Buffer) ■ Supports 16- and 32-Bit Burst Transfers — 33 M b ytes/S ec Maximum Data
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32-Bit
24-Byte
2L17S
82358
XC96
8251 intel microcontroller architecture
F245B
intel 82358
INTERFACING OF 8272 WITH 8086
EISA chip set
82355
ta 8271 hq
intel 82355
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2yl1
Abstract: MG75G2YL1A
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75G2YL1A HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r is Isolated . 2 P o we r T r a n s i s t o r s a n d Diodes a r e B u i l t - i n from Case . 2 F r e e Wheeling
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MG75G2YL1A
G75G2YL1A
2yl1
MG75G2YL1A
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NPN VCE0 1000V
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r i s I s o l a t e d from Case. . 2 Power T r a n s i s t o r s and 2 F re e Wheeling Diodes a r e B u i t - i n to 1 Pac kage.
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MG50M2YK1
MG25M2YK1
NPN VCE0 1000V
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MG75H2YL1A
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r is Isolated from Case. . 2 P o we r T r a n s i s t o r s a nd 2 ' F r e e W h e e l i n g Diodes a r e B u i l t - i n
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MG75H2YL1A
MG75H2YL1A
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103GCR050M
Abstract: No abstract text available
Text: BCR/GCR GMR/GQR Ceram ic Disc Selector Guide DESCRIPTION CAPACITANCE VOLTAGE CAPACITANCE TOLERANCE TEMPERATURE COEFFICIENT BCR T e m p era ture S ta b le 1 p f to 6 8 0 pf 50 W VD C ±10% Y5F GCR G e n e ra l P u rp o s e .001 M F D to .1 M F D 50 W VD C TYPE
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102GQR500Z
103GQR500Z
103GCR050M
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mg25m2
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG25M2YK1 HIGH POWER S W I T C H N G APPLICATIONS. riOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r is Isolated . 2 P o we r T r a n s i s t o r s a n d Diodes a r e B u i l t - i n from Case. 2 F re e Wheeling
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MG25M2YK1
mg25m2
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MG25M2YK1
Abstract: MG25M
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG25M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r i s I s o l a t e d fro m C a se . . 2 Power T r a n s i s t o r s and 2 F r e e W h e e lin g D io d e s a r e B u i l t - i n to 1 P a c k a g e .
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MG25M2YK1
MG25M2YK1
MG25M
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A 222G
Abstract: s2314a Illinois Lock Company b 222G D604 rd602 222G S2314
Text: R &D PROJ. n o . 602 DESTROY ALL PRINTS PREVIOUS TO DR G. NO. HD31 56CCS — 360 — 090 — 222G — 44 CUSTOMER PART# 1 5 0 - 3 2 7 6 - 0 1 NOTES: 1. KEY REMOVABLE IN BOTH POSITIONS. 2. DO NOT SUPPLY KEYS WITH LOCKS. 3. LOCK HAS .6 8 6 ACROSS BARREL FLATS.
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56ccs
s000a.
s2314a
f9637.
A 222G
Illinois Lock Company
b 222G
D604
rd602
222G
S2314
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B12-246
Abstract: D7-222GY base B12-246 D7 oscilloscope tubes
Text: D7-222GY INSTRUMENT CATHODE-RAY TUBE 7 cm diagonal, rectangular fla t faced mono accelerator oscilloscope tube prim arily fo r use in inexpensive oscilloscopes and monitors. This tube features a 1,5 W cathode w ith short warm-up tim e quick-heating cathode .
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D7-222GY
B12-246
D7-222GY
base B12-246
D7 oscilloscope tubes
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ssd0132
Abstract: SSD*0132
Text: M ODEL A P D -2 2 2 G 0 0 7 P lasm a P an el D isp lay M odules 222 x 7 Graphics Display w ith Drive Electronics Up to 37 C haracters in T ex t Mode The APD-222G007 consists of a DC plasma display panel, drive electronics and bezel and is designed for a direct replacement of Burroughs type
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APD-222G007
SSD0132-0039
483mm]
406mm]
762mm]
APD-222G007
ssd0132
SSD*0132
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MG50G2
Abstract: No abstract text available
Text: dF TOSHIBA íDI SC RE TE /OPT O> 90D 16006 9097 250 T O S HI BA DISCRETE/OPTO TO SH IB A I t OTTHSD DDlbQDt, 1 J ~ SEMICONDUCTOR r-3J-3S~ TOSHIBA GTR MODULE MG30G2YL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG30G2YL1
MG50G2YL3
MG50G2
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Untitled
Abstract: No abstract text available
Text: TOSHIBA "t o {DISCRETE/OPTO} 9097250 TOSHIBA TO SH IB A DE|im7aSD 90D DIS C R E T E / O P T O SEMICONDUCTOR OOlbOSfl 1 I 16058 D T -3 3 - 3 5 ' TOSHIBA GTR MODULE M G 2 5 M 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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mg15n2
Abstract: No abstract text available
Text: TO TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E | TDTTESO 001bDS4 1 DT"33-3 5 90D 16054 SEMICONDUCTOR TOSHIBA GTR MODULE M G 1 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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001bDS4
MG15N2YK1
mg15n2
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mg30g2
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G2YL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain:
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MG30G2YL1
mg30g2
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lF-50A
Abstract: No abstract text available
Text: MG50M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Buit-in to 1 Package. . High DC Current Gain: hpE=100 Min. (Ic=50A)
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MG50M2YK1
lF-50A
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MG50M2YK1
Abstract: 17250 b1 10
Text: TOSHIBA { D IS CR ET E/OPT O* _ TO 9 0 9 7 2 5 0 T O SH I BA <DISCRETE/OPTO> TOSHIBA SEMICONDUCTOR cïDcT7ES0 D O l bD bb ñ 90D 16066 DT-\33«35I TOSHIBA GTR MODULE MG50M2YK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.
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MG50M2YK1
Z-94C1A
mg50m2yk1
17250 b1 10
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MG30G2YL1
Abstract: No abstract text available
Text: MG30G2YL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpE=100 Min. (1^=3
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MG30G2YL1
50i------------------------------
77--r
MG30G2YL1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTO} ! 9097250 TOSHIBA DISCRETE/OPTO TO SH IB A TD ]> F | SOTTESO 90D 16014 SEMICONDUCTOR O O lb O m 0 7 ^ 33 .35- TOSHIBA CTR TRANSISTOR MG7 5G2YL1 A TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HI RH POWER SWITCHING APPLICATIONS.
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T0T7H50
MG75H2YL1A
EGA-MG75H2YL1A-4
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MG75G2YL1A
Abstract: 1-B215
Text: MG75G2YL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current: Gain : hf,E=80 Min. (Ic=7 5A)
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MG75G2YL1A
MG75G2YL1A
1-B215
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