UNR9110G
Abstract: UNR9114G UNR9111G UNR9112G UNR9113G UNR9115G UNR9116G UNR9117G UNR9118G UNR9119G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR911xG Series Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • Code SSMini3-F3 • Pin Name 1: Base 2: Emitter 3: Collector
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2002/95/EC)
UNR911xG
UNR9110G
UNR9114G
UNR9111G
UNR9112G
UNR9113G
UNR9115G
UNR9116G
UNR9117G
UNR9118G
UNR9119G
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ER12
Abstract: 103 capacitor
Text: MULTILAYER CERAMIC CAPACITORS RADIAL LEADS, MINIATURE RESISTORS CAPS & COILS DELAY LINES CER SERIES FEATURES Conformal coated and miniature size Wide range of capacitance, tolerance, TC, and voltage Radial lead design COG NPO , X7R, Z5U and Y5V temperature coefficients
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100pF
000pF)
ER12
103 capacitor
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UNR5210G
Abstract: UNR5211G UNR5212G UNR5213G UNR5214G UNR5215G UNR5216G UNR5217G UNR5218G UNR5219G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521xG Series Silicon NPN epitaxial planar type For digital circuits • Package • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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2002/95/EC)
UNR521xG
UNR5210G
UNR5211G
UNR5212G
UNR5213G
UNR5214G
UNR5215G
UNR5216G
UNR5217G
UNR5218G
UNR5219G
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UNR9214G
Abstract: UNR921FG UNR9210G UNR9211G UNR9212G UNR9213G UNR9215G UNR9216G UNR9217G UNR9218G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR921xG Series Silicon NPN epitaxial planar type For digital circuits • Package • Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
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2002/95/EC)
UNR921xG
UNR9214G
UNR921FG
UNR9210G
UNR9211G
UNR9212G
UNR9213G
UNR9215G
UNR9216G
UNR9217G
UNR9218G
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Untitled
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CAPACITORS RADIAL LEADS, MINIATURE RESISTORS MCAPS & COILS MDELAY LINES +-45-41-5 FEATURES H Conformal coated and miniature size H Wide range of capacitance, tolerance, TC, and voltage H Radial lead design H COG NPO , X7R, Z5U and Y5V temperature coefficients
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CER10
CER12
CER14
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UN4221
Abstract: UN4222 UN4223 UN4224 UNR4221 UNR4222 UNR4223 UNR4224
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR4221/4222/4223/4224 (UN4221/4222/4223/4224) Unit: mm Silicon NPN epitaxial planar type 4.0±0.2 For digital circuits 7.6 (0.8) 3.0±0.2 2.0±0.2 Th an W is k y
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2002/95/EC)
UNR4221/4222/4223/4224
UN4221/4222/4223/4224)
UN4221
UN4222
UN4223
UN4224
UNR4221
UNR4222
UNR4223
UNR4224
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Untitled
Abstract: No abstract text available
Text: WK/WR Vishay Draloric High Power Metal Oxide Leaded Resistors FEATURES • Rugged metal oxide film • High power dissipation in small size 1 W/0207 size to 4 W/0922 size • High temperature coating (up to 200 °C), non-flammable • Lead (Pb)-free solder contacts
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2002/95/EC
18-Jul-08
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WR50617
Abstract: 0R18 wk4 4r7 WR4 vishay metal oxide resistors WR40414 WK8 40 WR50 WK20207 MARKING WK4
Text: WK/WR Vishay Draloric Metal Oxide Resistors, High Power FEATURES • Rugged metal oxide film • Lead Pb -free solder contacts • Pure tin plating provides compatibility with lead (Pb)-free and lead containing soldering processes • Compatible with "Restriction of the use of Hazardous
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2002/95/EC
08-Apr-05
WR50617
0R18
wk4 4r7
WR4 vishay
metal oxide resistors
WR40414
WK8 40
WR50
WK20207
MARKING WK4
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marking wk2
Abstract: DB130-10 WR4 vishay wk4 4r7 VISHAY WK2 WR40414 WK2020 MARKING WK4 K/WK-203
Text: WK/WR Vishay Draloric Metal Oxide Resistors, High Power FEATURES • Rugged metal oxide film • Lead Pb -free solder contacts • Pure tin plating provides compatibility with lead (Pb)-free and lead containing soldering processes • Compatible with "Restriction of the use of Hazardous
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2002/95/EC
08-Apr-05
marking wk2
DB130-10
WR4 vishay
wk4 4r7
VISHAY WK2
WR40414
WK2020
MARKING WK4
K/WK-203
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WR506
Abstract: No abstract text available
Text: WK/WR Vishay Draloric High Power Metal Oxide Leaded Resistors FEATURES • Rugged metal oxide film • High power dissipation in small size 1 W/0207 size to 4 W/0922 size • High temperature coating (up to 200 °C), non-flammable • Lead (Pb)-free solder contacts
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2002/95/EC
18-Jul-08
WR506
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wk2+94v-0+rohs
Abstract: marking wk2
Text: WK/WR Vishay Draloric High Power Metal Oxide Leaded Resistors FEATURES • Rugged metal oxide film • High power dissipation in small size 1 W/0207 size to 4 W/0922 size • High temperature coating (up to 200 °C), non-flammable • Lead (Pb)-free solder contacts
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2002/95/EC
18-Jul-08
wk2+94v-0+rohs
marking wk2
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ic MARKING FZ
Abstract: UNR5225G UNR5226G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package ■ Features • Code SMini3-F2 • Pin Name 1: Base 2: Emitter 3: Collector Th an
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2002/95/EC)
UNR5225G,
UNR5226G
ic MARKING FZ
UNR5225G
UNR5226G
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WK202070
Abstract: Vishay WR5 Vishay 0414 resistor WK20207 WK20 RP-21000 VISHAY WK2 WR5- WR40414
Text: WK/WR Vishay Draloric Metal Oxide Resistors, High Power FEATURES • Rugged metal oxide film • Lead Pb -free solder contacts • Pure tin plating provides compatibility with lead (Pb)-free and lead containing soldering processes • Compatible with "Restriction of the use of Hazardous
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2002/95/EC
18-Jul-08
WK202070
Vishay WR5
Vishay 0414 resistor
WK20207
WK20
RP-21000
VISHAY WK2
WR5-
WR40414
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UNR2116
Abstract: UNR2216 UP04316G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04316G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP04316G
UNR2116
UNR2216
UP04316G
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marking wk2
Abstract: WK250
Text: WK/WR Vishay Draloric High Power Metal Oxide Leaded Resistors FEATURES • Rugged metal oxide film • High power dissipation in small size 1 W/0207 size to 4 W/0922 size • High temperature coating (up to 200 °C), non-flammable • Lead (Pb)-free solder contacts
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2002/95/EC
11-Mar-11
marking wk2
WK250
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WR4041
Abstract: No abstract text available
Text: WK/WR Vishay Draloric High Power Metal Oxide Leaded Resistors FEATURES • Rugged metal oxide film • High power dissipation in small size 1 W/0207 size to 4 W/0922 size • High temperature coating (up to 200 °C), non-flammable • Lead (Pb)-free solder contacts
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
WR4041
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/
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2002/95/EC)
UNR5225/5226/5227
UNR5225
UNR5226
UNR5227
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Untitled
Abstract: No abstract text available
Text: WK/WR www.vishay.com Vishay Draloric High Power Metal Oxide Leaded Resistors FEATURES • Rugged metal oxide film • High power dissipation in small size 1 W/0207 size to 4 W/0922 size • WK2 is AEC-Q200 qualified • High temperature coating (up to 200 °C), non-flammable
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AEC-Q200
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: General Purpose Chip Resistors Lead-Free for RMG 04/06/10/12 series Standard Document No. TRMG-XXRMG001A Issued Date 2008/12/23 page number 1/11 1. Scope : This specification applies for the RMG series chip resistors made by TA-I. 2. Construction: Over Coat
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TRMG-XXRMG001A
1/16W
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photo interrupter module
Abstract: PS5501LR-1 PS5501
Text: - 1 N E C 30E D ELECTRONICS INC • b427525 005=102^ b ■ PHOTO INTERRU PTER * PS5501LR-1 PHOTO IC INTERRUPTER D E S C R IP T IO N P A C K A G E D IM E N S IO N S Unit : mm The P S5501LR-1 photo interrupter module is a GaAs Light Emitting Diode coupled to a Si m ono
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b427525
PS5501LR-1
PS5501LR-1
SYM80L
photo interrupter module
PS5501
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Untitled
Abstract: No abstract text available
Text: owe TANFILM DIP RESISTOR NETWORK 1900 S elf p a s s iv a tio n la y e r and c o atin g system pro vid es e n v iro n m e n ta l protection Lid a n d c e ra m ic s u b s t r a t e t o ta lly fille d SERIES w ith e p o x y a d h e s iv e MIL qualified to MIL-R-83401/01 & 102
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MIL-R-83401/01
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"Microphone Preamplifier"
Abstract: A35A diode dc components m7 footprint SOT23 M7 LMV101 LMV101M7X LMV102M7 LMV102M7X LMV110 LMV321
Text: ß a t i o n a l S e m i c o n d u c t o r LMV101/102/105/110 Fixed-Gain Amplifiers General Description Features The LM V101/102/105/110 fixed-gain a m plifier fam ily inte grates a rail-to-rail op am p, tw o internal gain-setting resistors and a V+/2 bias circuit into one ultra tin y package, SC 70-5 or
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LMV101/102/105/110
SC70-5
OT23-5.
LMV321,
"Microphone Preamplifier"
A35A
diode dc components m7 footprint
SOT23 M7
LMV101
LMV101M7X
LMV102M7
LMV102M7X
LMV110
LMV321
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tip 102
Abstract: Transistor tip 102
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = 4 V , lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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TIP100/101/102
TIP105/106/107
TIP101
TIP101
tip 102
Transistor tip 102
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Untitled
Abstract: No abstract text available
Text: COMMERCIAL 1/8 W ATT TO 2 W ATT METAL FILM RESISTORS US& GP SERIES Precision performance, economical cost! FEATURES Substantially improved performance over industry stand ard is attained by stringent process controls and highest grade materials. The high-grade, thermal conductive
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50PPM
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