UNR5227
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR5227 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.
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UNR5227
UNR5227
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR5227 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.
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UNR5227
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ 0.2±0.1 2 (0.65) (0.65) (R2)
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2002/95/EC)
UNR5225/5226/5227
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/
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2002/95/EC)
UNR5225/5226/5227
UNR5225
UNR5226
UNR5227
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2
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2002/95/EC)
UNR5225/5226/5227
UNR5225
UNR5226
UNR5227
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planer transistor 0.425 Unit: mm For muting 0.3+0.1 –0.0 0.15+0.10 –0.05 5° 2.1±0.1 0.2±0.1 2 (0.65) (0.65) 1.3±0.1 (R2) 6.8 kΩ 2.0±0.2 10° 0 to 0.1 (R1) 10 kΩ
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UNR5225/5226/5227
UNR5225
UNR5226
UNR5227
SJH00043AED
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ic MARKING FZ
Abstract: UNR5225 UNR5226 UNR5227
Text: Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type 0.425 Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 2 0.2±0.1 1 ■ Resistance by Part Number Marking symbol
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UNR5225/5226/5227
UNR5225
UNR5226
UNR5227
ic MARKING FZ
UNR5225
UNR5226
UNR5227
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ic MARKING FZ
Abstract: UNR5225 UNR5226 UNR5227
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225/5226/5227 Silicon NPN epitaxial planar type (0.425) Unit: mm For muting 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 Collector-emitter voltage (Base open)
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2002/95/EC)
UNR5225/5226/5227
SC-70
ic MARKING FZ
UNR5225
UNR5226
UNR5227
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UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )
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UN1000
600mW
UN2000
200mW)
N2111
UN2112
UN2113
UN2114
UN2115
UN2116
UN7000
UN8000
UN9110
UNR921CJ
UN1219
un4115
un1211
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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equivalent transistor n 4212
Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Text: Series N am e Pakage No. R esistance value Rbe Rb ik O ) <kQ) UN1000 Series UN2000 Series U N 2000T Series UN4000 Series UN5Û00 Series UN6000 Series UN7000 Series UN8000 Series U N9000 Series M T 2 T y p e (D 3 8 ) SS Mini Type (D1) (P c = 1 W ) (P c = 1 2 5 m W )
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UN1000
600mW
UN1111
UN1112
UN1113
UN1114
UN1115
UN1116
UN1117
UN1118
equivalent transistor n 4212
N 4212
N4212
N111F
N621D
un4115
un1211
un4211 equivalent
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